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PDF HFA105NH60 Data sheet ( Hoja de datos )
| Número de pieza | HFA105NH60 | |
| Descripción | HEXFRED Ultrafast/ Soft Recovery Diode | |
| Fabricantes | International Rectifier | |
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HEXFREDTM
Features
• Reduced RFI and EMI
• Reduced Snubbing
• Extensive Characterization of Recovery Parameters
PD-2.444
HFA105NH60
Ultrafast, Soft Recovery Diode
LUG
TERMINAL
ANODE
ad
BASE CATHODE
VR = 600V
VF = 1.5V
Qrr * = 1200nC
di(rec)M/dt * = 240A/µs
* 125°C
Description
HEXFREDTM diodes are optimized to reduce losses and EMI/RFI in high frequency
power conditioning systems. An extensive characterization of the recovery
behavior for different values of current, temperature and di/dt simplifies the
calculations of losses in the operating conditions. The softness of the recovery
eliminates the need for a snubber in most applications. These devices are
ideally suited for power converters, motors drives and other applications where
switching losses are significant portion of the total losses.
HALF-PAK
Absolute Maximum Ratings
VR
IF @ TC = 25°C
IF @ TC = 100°C
IFSM
IAS
EAS
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Cathode-to-Anode Voltage
Continuous Forward Current
Continuous Forward Current
Single Pulse Forward Current
Maximum Single Pulse Avalanche Current
Non-Repetitive Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Max.
600
171
85
600
2.0
220
463
185
-55 to +150
Units
V
A
µJ
W
°C
Thermal - Mechanical Characteristics
RθJC
RθCS
Wt
Parameter
Junction-to-Case, Single
Case-to-Sink, Flat , Greased Surface
W eight
Mounting Torque
Terminal Torque
Note: Limited by junction temperature
L = 100µH, duty cycle limited by max TJ
Min.
––––
––––
––––
15 (1.7)
20 (2.2)
Typ.
––––
0.15
26 (0.9)
––––
––––
Max.
0.27
––––
––––
25 (2.8)
40 (4.4)
Units
°C/W
K/W
g (oz)
lbf•in
(N•m)
To Order
Revision 0
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HFA105NH60
REVERSE RECOVERY CIRCUIT
VR = 200V
L = 70µH
0.01 Ω
D.U.T.
dif/dt
ADJUST G
D
IRFP250
S
IF
0
3
trr
ta
tb
2
I RRM
Qrr 4
0.5 I RRM
di(rec)M/dt 5
0.75 IRRM
1 dif /dt
1. dif/dt - Rate of change of current
through zero crossing
2. IRRM - Peak reverse recovery current
4. Qrr - Area under curve defined by rtr
and IRRM
trr X IRRM
Qrr =
2
3. trr - Reverse recovery time measured
from zero crossing point of negative 5. di(rec)M/dt - Peak rate of change of
going IF to point where a line passing current during tb portion of trr
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current
Fig. 9 - Reverse Recovery Parameter Test
Circuit
Fig. 10 - Reverse Recovery Waveform and
Definitions
DUT
CURRENT
MONITOR
L = 100µH
Rg = 25 ohm
HIGH-SPEED
SWITCH
FREE-WHEEL
DIODE
+
Vd = 50V
I L(PK)
V (AVAL)
V R(RATED)
DECAY
TIME
Fig. 11 - Avalanche Test Circuit and Waveforms
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: (44) 0883 713215
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 3L1, Tel: (905) 475 1897 IR GERMANY:
Saalburgstrasse 157, 61350 Bad Homburg Tel: 6172 37066 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: (39) 1145 10111
IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo 171 Tel: (03)3983 0641 IR SOUTHEAST
ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, 0316 Tel: 65 221 8371
Data and specifications subject to change without notice.
To Order
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