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HFA15TB60-1 PDF даташит

Спецификация HFA15TB60-1 изготовлена ​​​​«International Rectifier» и имеет функцию, называемую «Ultrafast Soft Recovery Diode».

Детали детали

Номер произв HFA15TB60-1
Описание Ultrafast Soft Recovery Diode
Производители International Rectifier
логотип International Rectifier логотип 

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HFA15TB60-1 Даташит, Описание, Даташиты
Bulletin PD -2.334 rev. C 11/03
HFA15TB60
HFA15TB60-1
HEXFREDTM
Features
• Ultrafast Recovery
• Ultrasoft Recovery
• Very Low IRRM
• Very Low Qrr
• Specified at Operating Conditions
Benefits
• Reduced RFI and EMI
• Reduced Power Loss in Diode and Switching
Transistor
• Higher Frequency Operation
• Reduced Snubbing
• Reduced Parts Count
Ultrafast, Soft Recovery Diode
VR = 600V
VF = 1.7V
Qrr * = 84nC
di(rec)M/dt * = 188A/µs
* 125°C
Description
International Rectifier's HFA15TB60 is a state of the art ultra fast recovery
diode. Employing the latest in epitaxial construction and advanced processing
techniques it features a superb combination of characteristics which result in
performance which is unsurpassed by any rectifier previously available. With
basic ratings of 600 volts and 8 amps per Leg continuous current, the
HFA15TB60 is especially well suited for use as the companion diode for IGBTs
and MOSFETs. In addition to ultra fast recovery time, the HEXFRED product
line features extremely low values of peak recovery current (IRRM) and does not
exhibit any tendency to "snap-off" during the tb portion of recovery. The
HEXFRED features combine to offer designers a rectifier with lower noise and
significantly lower switching losses in both the diode and the switching transistor.
These HEXFRED advantages can help to significantly reduce snubbing,
component count and heatsink sizes. The HEXFRED HFA15TB60 is ideally suited
for applications in power supplies and power conversion systems (such as
inverters), motor drives, and many other similar applications where high speed,
high efficiency is needed.
TO-220AC
TO-262
Absolute Maximum Ratings
Parameter
VR
IF @ TC = 100°C
IFSM
IFRM
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Cathode-to-Anode Voltage
Continuous Forward Current
Single Pulse Forward Current
Maximum Repetitive Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
www.irf.com
Max
600
15
150
60
74
29
- 55 to +150
Units
V
A
W
C
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HFA15TB60-1 Даташит, Описание, Даташиты
HFA15TB60, HFA15TB60-1
Bulletin PD-2.334 rev. C 11/03
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min Typ Max Units
Test Conditions
VBR
Cathode Anode Breakdown Voltage
600
V IR = 100µA
1.3 1.7
IF = 15A
VFM Max Forward Voltage
1.5 2.0 V IF = 30A
See Fig. 1
1.2 1.6
IF = 15A, TJ = 125°C
IRM Max Reverse Leakage Current
1.0 10
400 1000
µA
VR = VR Rated
See Fig. 2
TJ = 125°C, VR = 0.8 x VR RatedD Rated
CT Junction Capacitance
25 50 pF VR = 200V
See Fig. 3
LS Series Inductance
8.0
nH
Measured lead to lead 5mm from
package body
Dynamic Recovery Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min Typ Max Units
Test Conditions
trr
trr1
trr2
IRRM1
IRRM2
Qrr1
Qrr2
di(rec)M/dt1
di(rec)M/dt2
Reverse Recovery Time
See Fig. 5
Peak Recovery Current
See Fig. 6
Reverse Recovery Charge
See Fig. 7
Peak Rate of Fall of Recovery Current
During tb
See Fig. 8
19 IF = 1.0A, dif/dt = 200A/µs, VR = 30V
42 60 ns TJ = 25°C
74 120
TJ = 125°C
IF = 15A
4.0 6.0 A TJ = 25°C
6.5 10
TJ = 125°C
VR = 200V
84 180
241 600
nC
TJ = 25°C
TJ = 125°C
dif/dt = 200A/µs
188
160
A/µs
TJ = 25°C
TJ = 125°C
Thermal - Mechanical Characteristics
Tlead
RthJC
RthJA
RthCS
Wt
Parameter
Lead Temperature
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Thermal Resistance, Case to Heat Sink
Weight
T Mounting Torque
0.063 in. from Case (1.6mm) for 10 sec
Typical Socket Mount
Mounting Surface, Flat, Smooth and Greased
2
Min
6.0
5.0
Typ
0.5
2.0
0.07
Max
300
1.7
80
12
10
Units
°C
K/W
g
(oz)
Kg-cm
lbf•in
www.irf.com









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HFA15TB60-1 Даташит, Описание, Даташиты
HFA15TB60, HFA15TB60-1
Bulletin PD-2.334 rev. C 11/03
100 10000
1000
TJ = 150°C
100 TJ = 125°C
10
1
TJ= 150°C
TJ= 125°C
0.1
TJ = 25°C
0.01
A
10
TJ= 25°C
0 200 400 600
Reverse Voltage - V R (V)
Fig. 2 - Typical Reverse Current vs. Reverse
Voltage
100 A
1
1.0 1.2 1.4 1.6 1.8 2.0 2.2
Forward Voltage Drop - VFM (V)
A
2.4
Fig. 1 - Maximum Forward Voltage Drop
vs. Instantaneous Forward Current
10
TJ = 25°C
10 A
10 100 1000
Reverse Voltage - VR (V)
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage
1 D = 0.50
0.20
0.10
0.1 0.05
0.02
0.01
0.01
0.00001
PDM
t1
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t1 / t 2
2. Peak TJ = P DM x ZthJC + TC
0.0001
0.001
0.01
t1, Rectangular Pulse Duration (sec)
0.1
Fig. 4 - Maximum Thermal Impedance Zthjc Characteristics
t2
www.irf.com
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HFA15TB60-1Ultrafast Soft Recovery DiodeInternational Rectifier
International Rectifier
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