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PDF HFA3135 Data sheet ( Hoja de datos )
| Número de pieza | HFA3135 | |
| Descripción | Ultra High Frequency Matched Pair Transistors | |
| Fabricantes | Intersil Corporation | |
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Data Sheet
HFA3134, HFA3135
February 1998
File Number 4445
Ultra High Frequency Matched Pair
Transistors
The HFA3134 and HFA3135 are Ultra High Frequency
Transistor pairs that are fabricated with Intersil Corporation’s
complementary bipolar UHF-1X process. The NPN
transistors exhibit an fT of 8.5GHz, while the PNP transistors
have an fT of 7GHz. Both types exhibit low noise, making
them ideal for high frequency amplifier and mixer
applications.
Both arrays are matched high frequency transistor pairs. The
matching simplifies DC bias problems and it minimizes
imbalances in differential amplifier configurations. Their high
fT enables the design of UHF amplifiers which exhibit
exceptional stability.
Ordering Information
PART NUMBER
(BRAND)
HFA3134IH96
(H04)
TEMP.
RANGE (oC)
PACKAGE
-40 to 85 6 Ld SOT23
HFA3135IH96
(H05)
-40 to 85 6 Ld SOT23
PKG.
NO.
P6.064
P6.064
Pinouts
HFA3134
(SOT23)
TOP VIEW
16
Q1
25
3 Q2 4
Features
• NPN Transistor (fT) . . . . . . . . . . . . . . . . . . . . . . . . .8.5GHz
• NPN Current Gain (hFE). . . . . . . . . . . . . . . . . . . . . . . . 100
• NPN Noise Figure (50Ω) at 1.0GHz . . . . . . . . . . . . . 2.6dB
• PNP Transistor (fT) . . . . . . . . . . . . . . . . . . . . . . . . . . 7GHz
• PNP Current Gain (hFE) . . . . . . . . . . . . . . . . . . . . . . . . . 57
• PNP Noise Figure (50Ω) at 900MHz . . . . . . . . . . . . 4.6dB
• Small Package (EIAJ-SC74 Compliant) . . . . . . . SOT23-6
Applications
• VHF/UHF Amplifiers
• VHF/UHF Mixers
• IF Converters
• Synchronous Detectors
HFA3135
(SOT23)
TOP VIEW
16
Q1
25
3 Q2 4
4-450
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
1 page  
HFA3134, HFA3135
Typical Performance Curves TA = 25oC, Unless Otherwise Specified (Continued)
130
120
110
100
90
80
70
60
50
40
30
20
1n
Q2 Q1 Q1
VCE = 5V
Q2 VCE = 3V
VCE = 1V
1n 100n 1µ 10µ 100µ 1m 10m 100m
COLLECTOR CURRENT (A)
10
9
8
7
6
5
4
3
2
1
0.1
VCE = 5V
VCE = 3V
VCE = 1V
1 10
COLLECTOR CURRENT (mA)
FIGURE 3. NPN DC CURRENT GAIN vs COLLECTOR CURRENT
FIGURE 4. NPN GAIN BANDWIDTH PRODUCT vs
COLLECTOR CURRENT
1n
COLLECTOR = OPEN
100p
10p
1p
100
0.1p
0 -0.3 -0.6 -0.9 -1.2 -1.5 -1.8 -2.1 -2.4 -2.7 -3.0
BASE TO EMITTER VOLTAGE (V)
FIGURE 5. NPN EMITTER CUTTOFF CURRENT vs BASE TO EMITTER VOLTAGE
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site www.intersil.com
Sales Office Headquarters
NORTH AMERICA
Intersil Corporation
P. O. Box 883, Mail Stop 53-204
Melbourne, FL 32902
TEL: (321) 724-7000
FAX: (321) 724-7240
EUROPE
Intersil SA
Mercure Center
100, Rue de la Fusee
1130 Brussels, Belgium
TEL: (32) 2.724.2111
FAX: (32) 2.724.22.05
ASIA
Intersil (Taiwan) Ltd.
7F-6, No. 101 Fu Hsing North Road
Taipei, Taiwan
Republic of China
TEL: (886) 2 2716 9310
FAX: (886) 2 2715 3029
4-454
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