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PDF HFA75MB40C Data sheet ( Hoja de datos )
| Número de pieza | HFA75MB40C | |
| Descripción | Ultrafast/ Soft Recovery Diode HEXFRED | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PD -2.475A
HFA75MB40C
HEXFREDTM
Ultrafast, Soft Recovery Diode
Features
Reduced RFI and EMI
Reduced Snubbing
Extensive Characterization of Recovery Parameters
(ISOLATED BASE)
(1-3) (4-6) (7-9)
ANODE COMMON ANODE
1 CATHODE
2
VR = 400V
VF(typ.) = 1V
IF(AV) = 75A
Qrr (typ.) = 200nC
IRRM(typ.) = 6A
trr(typ.) = 30ns
di(rec)M/dt (typ.) = 190A/µs
Description
HEXFREDTMdiodes are optimized to reduce losses and EMI/RFI in high frequency
power conditioning systems. An extensive characterization of the recovery
behavior for different values of current, temperature and di/dt simplifies the
calculations of losses in the operating conditions. The softness of the recovery
eliminates the need for a snubber in most applications. These devices are
ideally suited for power converters, motors drives and other applications where
switching losses are significant portion of the total losses.
Absolute Maximum Ratings (per Leg)
D-60
A
(MODIFIED T0-249AA)
Parameter
VR
IF @ TC = 25°C
IF @ TC = 100°C
IFSM
IAS
EAS
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Cathode-to-Anode Voltage
Continuous Forward Current
Continuous Forward Current
Single Pulse Forward Current
Maximum Single Pulse Avalanche Current
Non-Repetitive Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Thermal - Mechanical Characteristics
RθJC
RθCS
Wt
Parameter
Junction-to-Case, Single Leg Conducting
Junction-to-Case, Both Legs Conducting
Case-to-Sink, Flat, Greased Surface
Weight
Mounting Torque
Note: Limited by junction temperature
L = 100µH, duty cycle limited by max TJ
125°C
Max.
400
75
36
300
5.0
1.4
125
50
-55 to +150
300 (0.063 in. (1.6mm) from case)
Min.
35 (4.0)
Typ.
0.10
58 (2.0)
Max.
1.0
0.50
50 (5.7)
Units
V
A
mJ
W
°C
Units
°C/W
K/W
g (oz)
lbfin
(Nm)
5/5/97
1 page  
HFA75MB40C
REVERSE RECOVERY CIRCUIT
VR = 200V
L = 70µH
0.01 Ω
D.U.T.
dif/dt
ADJUST G
D
IRFP250
S
IF
0
3
trr
ta
tb
2
I RRM
4
Qrr
0.5 I RRM
di(rec)M/dt
5
0.75 IRRM
1 dif /dt
1. dif/dt - Rate of change of current
through zero crossing
2. IRRM - Peak reverse recovery current
3. trr - Reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current
4. Qrr - Area under curve defined by trr
and IRRM
trr X IRRM
Qrr =
2
5. di(rec)M/dt - Peak rate of change of
current during tb portion of trr
Fig. 9 - Reverse Recovery Parameter Test
Circuit
Fig. 10 - Reverse Recovery Waveform and
Definitions
DUT
CURRENT
MONITOR
L = 100µH
Rg = 25 ohm
HIGH-SPEED
SWITCH
FREE-W HEEL
DIODE
+
Vd = 50V
I L(PK)
V (AVAL)
V R(RATED)
DE CAY
TIME
Fig. 11 - Avalanche Test Circuit and Waveforms
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/ Data and specifications subject to change without notice.
5/97
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet HFA75MB40C.PDF ] | |
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