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Número de pieza | HFB06TB120 | |
Descripción | Ultrafast/ Soft Recovery Diode | |
Fabricantes | International Rectifier | |
Logotipo | ||
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No Preview Available ! Bulletin PD -2.382 rev. D 12/00
HEXFREDTM
HFA06TB120
Ultrafast, Soft Recovery Diode
Features
• UltrafastRecovery
• UltrasoftRecovery
• Very Low IRRM
• Very Low Qrr
• Specified at Operating Conditions
Benefits
• Reduced RFI and EMI
• Reduced Power Loss in Diode and Switching
Transistor
• HigherFrequencyOperation
• ReducedSnubbing
• Reduced Parts Count
BASE
CATHODE
4
2
1
CATHODE
3
ANODE
2
VR = 1200V
VF(typ.)* = 2.4V
IF(AV) = 6.0A
Qrr (typ.)= 116nC
IRRM(typ.) = 4.4A
trr(typ.) = 26ns
di(rec)M/dt (typ.)* = 100A/µs
Description
International Rectifier's HFA06TB120 is a state of the art ultra fast recovery diode.
Employing the latest in epitaxial construction and advanced processing techniques it
features a superb combination of characteristics which result in performance which is
unsurpassed by any rectifier previously available. With basic ratings of 1200 volts and
6 amps continuous current, the HFA06TB120 is especially well suited for use as the
companion diode for IGBTs and MOSFETs. In addition to ultra fast recovery time, the
HEXFRED product line features extremely low values of peak recovery current (IRRM)
and does not exhibit any tendency to "snap-off" during the tb portion of recovery. The
HEXFRED features combine to offer designers a rectifier with lower noise and
significantly lower switching losses in both the diode and the switching transistor.
These HEXFRED advantages can help to significantly reduce snubbing, component
count and heatsink sizes. The HEXFRED HFA06TB120 is ideally suited for applications
in power supplies and power conversion systems (such as inverters), motor drives, and
many other similar applications where high speed, high efficiency is needed.
TO-220AC
Absolute Maximum Ratings
VR
IF @ TC = 100°C
IFSM
IFRM
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Cathode-to-Anode Voltage
Continuous Forward Current
Single Pulse Forward Current
Maximum Repetitive Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
* 125°C
Max.
1200
8.0
80
24
62.5
25
-55 to +150
Units
V
A
W
°C
1
1 page HFA06TB120
Bulletin PD-2.382 rev. D 12/00
REVERSE RECOVERY CIRCUIT
VR = 200V
L = 70µH
0.01 Ω
D.U.T.
dif/dt
ADJUST G
D
IRFP250
S
IF
0
Fig. 9- Reverse Recovery Parameter Test Circuit
3
trr
ta
tb
1 dif /dt
2 I RRM
Qrr 4
0.5 I RRM
di(rec)M/dt
5
0.75 IRRM
1cu. rdrief/dntt - Rtahtreouogf hchzaenroge of
crossing
2re.cIRoRveMry- Pceuarkrernetverse
3. trr - Reverse recovery
time measured from zero
crossing point of negative
paegxanotsdrisna0igpn.o5gIFl0athttIoeRrdoRpuMotgoinhtz0ew.r7ho5ercIeuRrRarMelinnte
4d.efQinrer d-
Area
by trr
under curve
and IRRM
Qrr =
trr X IRRM
2
5ch. adni(greec)Mo/fdt
- Peak rate of
current during
portion of trr
tb
Fig. 10 - Reverse Recovery Waveform and Definitions
5
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet HFB06TB120.PDF ] |
Número de pieza | Descripción | Fabricantes |
HFB06TB120 | Ultrafast/ Soft Recovery Diode | International Rectifier |
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