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HFB32PA120C PDF даташит

Спецификация HFB32PA120C изготовлена ​​​​«International Rectifier» и имеет функцию, называемую «Ultrafast/ Soft Recovery Diode».

Детали детали

Номер произв HFB32PA120C
Описание Ultrafast/ Soft Recovery Diode
Производители International Rectifier
логотип International Rectifier логотип 

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HFB32PA120C Даташит, Описание, Даташиты
Bulletin PD -2.360 rev. B 05/01
HEXFREDTM
Features
• Ultrafast Recovery
• Ultrasoft Recovery
• Very Low IRRM
• Very Low Qrr
• Specified at Operating Conditions
Benefits
• Reduced RFI and EMI
• Reduced Power Loss in Diode and Switching
Transistor
• Higher Frequency Operation
• Reduced Snubbing
• Reduced Parts Count
HFA32PA120C
Ultrafast, Soft Recovery Diode
2
13
per Leg
VR = 1200V
VF(typ.) = 2.3V
IF(AV) = 16A
Qrr (typ.)= 260nC
IRRM(typ.) = 5.8A
trr(typ.) = 30ns
Description
International Rectifier's HFA32PA120C is a state of the art ultra fast recovery
diode. Employing the latest in epitaxial construction and advanced processing
techniques it features a superb combination of characteristics which result in
performance which is unsurpassed by any rectifier previously available. With
basic ratings of 1200 volts and 16 amps continuous current, the HFA32PA120C
is especially well suited for use as the companion diode for IGBTs and
MOSFETs. In addition to ultra fast recovery time, the HEXFRED product line
features extremely low values of peak recovery current (IRRM) and does not
exhibit any tendency to "snap-off" during the tb portion of recovery. The
HEXFRED features combine to offer designers a rectifier with lower noise and
significantly lower switching losses in both the diode and the switching
transistor. These HEXFRED advantages can help to significantly reduce
snubbing, component count and heatsink sizes. The HEXFRED HFA32PA120C
is ideally suited for applications in power supplies and power conversion
systems (such as inverters), motor drives, and many other similar applications
where high speed, high efficiency is needed.
TO-247AC
Absolute Maximum Ratings (per Leg)
VR
IF @ TC = 100°C
IFSM
IFRM
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
* 125°C
Parameter
Cathode-to-Anode Voltage
Continuous Forward Current
Single Pulse Forward Current
Maximum Repetitive Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
www.irf.com
Max
1200
16
190
64
151
60
-55 to +150
Units
V
A
°C
W
1









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HFB32PA120C Даташит, Описание, Даташиты
HFA32PA120C
Bulletin PD-2.360 rev. B 05/01
Electrical Characteristics (per Leg) @ TJ = 25°C (unless otherwise specified)
Parameter
Min Typ Max Units
Test Conditions
VBR Cathode Anode Breakdown Voltage 1200
V IR = 100µA
2.5 3.0
IF = 16A
VFM Max Forward Voltage
3.2 3.93 V IF = 32A
See Fig. 1
2.3 2.7
IF = 16A, TJ = 125°C
IRM Max Reverse Leakage Current
0.75 20
375 2000
µA
VR = VR Rated
See Fig. 2
TJ = 125°C, VR = 0.8 x VR RatedD Rated
CT Junction Capacitance
27 40 pF VR = 200V
See Fig. 3
LS Series Inductance
8.0
nH
Measured lead to lead 5mm from
package body
Dynamic Recovery Characteristics (per Leg) @ TJ = 25°C (unless otherwise specified)
Parameter
Min Typ Max Units
Test Conditions
trr
trr1
trr2
IRRM1
IRRM2
Qrr1
Qrr2
di(rec)M/dt1
di(rec)M/dt2
Reverse Recovery Time
See Fig. 5, 10
Peak Recovery Current
See Fig. 6
Reverse Recovery Charge
See Fig. 7
Peak Rate of Fall of Recovery Current
During tb
See Fig. 8
30
90 135
164 245
5.8 10
8.3 15
260 675
680 1838
120
76
ns
A
nC
A/µs
IF = 1.0A, dif/dt = 200A/µs, VR = 30V
TJ = 25°C
TJ = 125°C
IF = 16A
TJ = 25°C
TJ = 125°C
VR = 200V
TJ = 25°C
TJ = 125°C
dif/dt = 200A/µs
TJ = 25°C
TJ = 125°C
Thermal - Mechanical Characteristics
Tlead!
RthJC
RthJA "
RthCS#
Wt
Parameter
Min Typ Max Units
Lead Temperature
300 °C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Thermal Resistance, Case to Heat Sink
0.50
0.83
80
K/W
Weight
Mounting Torque
2.0
0.07
6.0
5.0
g
(oz)
12 Kg-cm
10 lbf•in
! 0.063 in. from Case (1.6mm) for 10 sec
" Typical Socket Mount
# Mounting Surface, Flat, Smooth and Greased
2 www.irf.com









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HFB32PA120C Даташит, Описание, Даташиты
100
10
TJ = 150˚C
T = 125˚C
J
T = 25˚C
J
1
HFA32PA120C
Bulletin PD-2.360 rev. B 05/01
1000
100
TJ= 150˚C
10 T J= 125˚C
1
TJ= 25˚C
0.1
0.01
0
200 400 600 800 1000
Reverse Current - VR (V)
A
1200
Fig. 2 - Typical Reverse Current vs. Reverse
Voltage
1000
100 TJ = 25˚C
0.1
02468
Fig. 1 - Maximum Forward Voltage Drop
vs. Instantaneous Forward Current
1
10
1A
1
10
100
1000
10000
Reverse Current - VR (V)
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
0.1 D = 0.01
Single Pulse
(Thermal Resistance)
0.01
0.00001
0.0001
0.001
0.01
PDM
t1
t2
Notes:
1. Duty factor D = t1/ t 2
2. Peak TJ = Pdm x ZthJC + Tc
0.1 1 10 100
www.irf.com
t1, Rectangular Pulse Duration (sec)
Fig. 4 - Maximum Thermal Impedance Zthjc Characteristics
3










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Номер в каталогеОписаниеПроизводители
HFB32PA120CUltrafast/ Soft Recovery DiodeInternational Rectifier
International Rectifier

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