CDBD20200-G Datasheet PDF - Comchip
| Part Number | CDBD20200-G | |
| Description | (CDBD2020-G - CDBD20200-G) Chip Schottky Barrier Rectifier | |
| Manufacturers | Comchip | |
| Logo |  |
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There is a preview and CDBD20200-G download ( pdf file ) link at the bottom of this page. Total 4 Pages | ||
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Chip Schottky Barrier Rectifier
CDBD2020-G Thru. CDBD20200-G
Reverse Voltage: 20 to 200 Volts
Forward Current: 20.0 Amp
RoHS Device
Features
-Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
-Low profile surface mounted application in order to
optimize board space.
-Low power loss, high efficiency.
-High current capability, low forward voltage drop.
-High surge capability.
-Guardring for overvoltage protection.
-Ultra high-speed switching.
-Silicon epitaxial planar chip, metal silicon junction.
-Lead-free parts meet environmental standards of
MIL-STD-19500 /228
Mechanical data
-Case: TO-263/D2PAK, molded plastic.
-Terminals: solderable per MIL-STD-750,
method 2026.
-Polarity: Indicated by cathode band.
-Weunting Position: Any
-Weight:1.46 gram(approx.).
D2PAK
0.046(1.20)
0.032(0.80)
0.402(10.20)
0.386(9.80)
0.185(4.70)
0.169(4.30)
0.370(9.40)
0.354(9.00)
0.192(4.8)
0.176(4.4)
2
13
0.205(5.20)
0.189(4.80)
0.063(1.60)
0.055(1.40)
0.055(1.40)
0.047(1.20)
0.012(0.30)
0.004(0.10)
0.024(0.60)
0.016(0.40)
0.108(2.70)
0.092(2.30)
Dimensions in inches and (millimeters)
PIN 1
PIN 3
PIN 2
Maximum Ratings (At Ta=25°C, unless otherwise noted)
Parameter
Symbol
CDBD
2020-G
CDBD
2030-G
CDBD
2040-G
CDBD
2045-G
CDBD
2050-G
CDBD
2060-G
CDBD CDBD CDBD CDBD
2080-G 20100-G 20150-G 20200-G
Unit
Repetitive peak reverse voltage
VRRM 20 30 40 45 50 60 80 100 150 200 V
Continuous reverse voltage
VR 20 30 40 45 50 60 80 100 150 200 V
RMS voltage
Maximum Forward rectified current
(See fig. 1)
Maximum forward voltage
IF=10.0A
VRMS 14 21 28 31.5 35 42 56 70 105 140 V
IO 20.0 A
VF 0.55
0.75 0.85 1.00 V
Maxium Forward surge current, 8.3ms
singlehalf sine-wave superimposed on
rate load (JEDEC method)
IFSM
150 A
MaximumReverse
current
Typ.Thermal
resistance
VR=VRRM TA=25°C
VR=VRRM TA=100°C
Junction to Case
Operating temperature
IR
IR
RθJc
TJ
-55 to +125
0.5
50
2.0
-55 to +150
mA
mA
°C/W
°C
Storage temperature
TSTG
-65 to +175
°C
QW-BB035
Comchip Technology CO., LTD.
REV:A
Page 1
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for CDBD20200-G electronic component. |
| Information | Total 4 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ CDBD20200-G.PDF Datasheet ] | |
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