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даташит 50N06 PDF ( Datasheet )

50N06 Datasheet Download - KIA

Номер произв 50N06
Описание N-CHANNEL MOSFET
Производители KIA
логотип KIA логотип 



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50N06 Даташит, Описание, Даташиты
KIA
SEMICONDUCTORS
50 Amps, 60 Volts
N-CHANNEL MOSFET
销售电话:13641469108廖先生
QQ:543158798
50N06
1.Description
The KIA50N06 is three-terminal silicon device with current conduction capability of about
50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max threshold
voltages of 4 volt. It is mainly suitable electronic ballast, and low power switching
2. Features
RDS(ON)=23mΩ@VGS=10V.
Ultra low gate charge (typical 30nC)
Low reverse transfer capacitance
Fast switching capability
100avalanche energy specified
Improved dv/dt capability
3. Pin configuration
Pin
1
2
3
1 of 9
Function
Gate
Drain
Source
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50N06 Даташит, Описание, Даташиты
KIA
SEMICONDUCTORS
50 Amps, 60 Volts
N-CHANNEL MOSFET
50N06
6. Absolute maximum ratings
Parameter
SymbolValueUnit
Drain to source voltage
VDSS60V
Gate to source voltage
VGSS±20V
TJ=25 ºCID50A
Continuous drain current
TJ=100 ºCID35A
Drain current pulsed (note1)IDM200A
Single pulsed avalanche energy (note2)EAS480mJ
Repetitive avalanche energy (note1)EAR13mJ
Peak diode recovery dv/dt (note3)dv/dt7V/ns
Total power dissipation(TJ=25 ºC)PD130W
Derating factor above 25 ºCPD0.9W/ ºC
Operating junction temperatureTJ-55 ~ +150ºC
Storage temperatureTSTG-55 ~ +150ºC
Note: Absolute maximum ratings are those values beyond which the device could be permanently
damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
3. Thermal resistance
Parameter
Thermal resistance, junction-to-case
Thermal resistance,case-to-sink
Thermal resistance,junction-to-ambient
Symbol
θJC
θCS
θJA
Typ Max Units
1.15 ºC/W
ºC/W
0.5 ºC/W
62.5
2 of 9
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50N06 Даташит, Описание, Даташиты
KIA
SEMICONDUCTORS
50 Amps, 60 Volts
N-CHANNEL MOSFET
50N06
7. Electrical characteristics
Parameter
Off characteristics
Drain-source breakdown voltage
Breakdown voltage temperature
coefficient
Symbol
BVDSS
ΔBVDSS/ΔTJ
Drain-source leakage current
IDSS
Gate-source leakage current
IGSS
Gate-source leakage Reverse
On characteristics
Gate threshold voltageVGS(TH)
Static drain-source on-state
RDS(ON)
resistance
Dynamic characteristics
Input capacitanceCISS
Output capacitanceCOSS
Reverse transfer capacitanceCRSS
Switching characteristics
Turn-on delay timetD(ON)
Rise timetR
Turn-off delay timetD(OFF)
Fall timetF
Total gate chargeQG
Gate-source chargeQGS
Gate-drain charge (miller charge)QGD
Source-drain diode ratings and characteristics
Diode forward voltageVSD
Continuous source current
IS
(TJ=25°C,unless otherwise notes)
Test conditionsMinTypMaxUnit
VGS=0V,ID=250μA
ID=250μA,
referenced to 25 ºC
VDS=60V,VGS=0V
VDS=48V,TC=125 ºC
VGS=20V,VDS=0V
VGS=-20V,VDS=0V
VDS=VGS, ID=250μA
VGS=10V,ID=25A
VDS=25V,VGS=0V,f=1MHz
VDD=30V,ID=25A,RG=50Ω
(note4,5)
VDS=48V,VGS=10V,ID=50A
(note4,5)
60 V
0.07 V/ºC
1
1
100
-100
μA
μA
nA
nA
2.0 4.0 V
18 23 mΩ
900 1220
430 550
80 100
pF
pF
pF
40 60
100 200
90 180
80 160
30 40
9.6
10
ns
ns
ns
ns
nC
nC
nC
VGS=0V,IS=50A
Integral reverse p-n junction
diode in the MOSFET
1.5 V
50 A
Pulsed source current
ISM
Reverse recovery timetRRVGS=0V,IS=50A
dIF/dt=100A/μs(note4)Reverse recovery chargeQRR
Note:1. repetitive rating:pulse width limited by junction temperature
2.L=5.6mH,IAS=50A,VDD=25V,RG=0Ω,staring TJ=25ºC
3.ISD<50A,di/dt<300A/μs,VDD<BVDSS,staring TJ=25 ºC
4.Pulse test:pulse width<300μs,duty cycle<2%
5.Essentially independent of operating temperature
200 A
54 ns
81 μC
3 of 9
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