DataSheet26.com

даташит 2SK1947 PDF ( Datasheet )

2SK1947 Datasheet Download - Renesas

Номер произв 2SK1947
Описание Silicon N Channel MOS FET
Производители Renesas
логотип Renesas логотип 



1Page
		

No Preview Available !

2SK1947 Даташит, Описание, Даташиты
2SK1947
Silicon N Channel MOS FET
Application
High speed power switching
Features
Low on-resistance
High speed switching
Low drive current
Built-in fast recovery diode (trr = 140 ns)
Suitable for switching regulator, motor control
Outline
REJ03G0986-0200
(Previous: ADE-208-1334)
Rev.2.00
Sep 07, 2005
RENESAS Package code: PRSS0004ZF-A
(Package name: TO-3PL)
D
1
2
3
G
S
1. Gate
2. Drain
(Flange)
3. Source
Rev.2.00 Sep 07, 2005 page 1 of 6
Free Datasheet http://www.datasheet4u.com/







No Preview Available !

2SK1947 Даташит, Описание, Даташиты
2SK1947
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW 10 µs, duty cycle 1 %
2. Value at Tc = 25°C
Symbol
VDSS
VGSS
ID
ID(pulse)*1
IDR
Pch*2
Tch
Tstg
Ratings
250
±30
50
200
50
200
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C
°C
Electrical Characteristics
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward voltage
Body to drain diode reverse
recovery time
Note: 3. Pulse Test
Symbol
V(BR)DSS
V(BR)GSS
IGSS
IDSS
VGS(off)
RDS(on)
|yfs|
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDF
trr
Min
250
±30
2.0
20
Typ
0.047
30
5810
2360
270
75
270
420
200
1.2
140
Max
±10
250
3.0
0.06
Unit
V
V
µA
µA
V
(Ta = 25°C)
Test conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±25 V, VDS = 0
VDS = 200 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 25 A, VGS = 10 V*3
S ID = 25 A, VDS = 10 V*3
pF VDS = 10 V, VGS = 0,
pF f = 1 MHz
pF
ns ID = 25 A, VGS = 10 V,
ns RL = 1.2
ns
ns
V IF = 50 A, VGS = 0
ns IF = 50 A, VGS = 0,
diF/dt = 100 A/µs
Rev.2.00 Sep 07, 2005 page 2 of 6
Free Datasheet http://www.datasheet4u.com/







No Preview Available !

2SK1947 Даташит, Описание, Даташиты
2SK1947
Main Characteristics
Power vs. Temperature Derating
300
200
100
0 50 100 150
Case Temperature TC (°C)
Typical Output Characteristics
100
10 V 8 V
80 6 V
60
5.5 V
40
5V
20 4 V
VGS = 3.5 V
0 4 8 12 16 20
Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
5
Pulse Test
4
3
50 A
2
1 20 A
ID = 10 A
0 4 8 12 16 20
Gate to Source Voltage VGS (V)
Rev.2.00 Sep 07, 2005 page 3 of 6
Maximum Safe Operation Area
1000
300
100
30
10
3
DC
PW
Operatio=n
Operation in this
area is limited
by R DS (on)
10
(Tc
1
1001µ0sµs
ms
m= s25(1C)shot)
1
0.3 Ta = 25°C
0.1
1
3
10 30 100 300 1000
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
50
40
VDS = 10 V
Pulse Test
30
20 Tc = 25°C
10 75°C
–25°C
0 2 4 6 8 10
Gate to Source Voltage VGS (V)
Static Drain to Source on State
Resistance vs. Drain Current
0.5
Pulse Test
0.2
0.1
0.05
VGS = 10 V
0.02
0.01
0.005
2
5 10 20 50 100 200
Drain Current ID (A)
Free Datasheet http://www.datasheet4u.com/








Всего страниц 7 Pages
Скачать PDF[ 2SK1947.PDF Даташит ]

Ссылка Поделиться


Related Datasheets

Номер в каталогеОписаниеПроизводители
2SK1940N-channel MOS-FETFuji Electric
Fuji Electric
2SK1940N-Channel MOSFET TransistorInchange Semiconductor
Inchange Semiconductor
2SK1940-01N-channel MOS-FETFuji Electric
Fuji Electric
2SK1941N-channel MOS-FETFuji Electric
Fuji Electric

Номер в каталоге Описание Производители
6MBP200RA-060

Intelligent Power Module

Fuji Electric
Fuji Electric
ADF41020

18 GHz Microwave PLL Synthesizer

Analog Devices
Analog Devices
AN-SY6280

Low Loss Power Distribution Switch

Silergy
Silergy

DataSheet26.com    |    2020    |   Контакты    |    Поиск