2SK1957
Silicon N Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance
• High speed switching
• Low drive current
• No secondary breakdown
• Suitable for switching regulator, DC-DC converter, motor control
Outline
RENESAS Package code: PRSS0003AD-A
(Package name: TO-220FM)
G
12 3
REJ03G0988-0200
(Previous: ADE-208-1336)
Rev.2.00
Sep 07, 2005
D
1. Gate
2. Drain
3. Source
S
Rev.2.00 Sep 07, 2005 page 1 of 6
Free Datasheet http://www.datasheet4u.com/
2SK1957
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
Symbol
VDSS
VGSS
ID
ID(pulse)*1
IDR
Pch*2
Tch
Tstg
Ratings
200
±20
7
28
7
30
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C
°C
Electrical Characteristics
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward voltage
Body to drain diode reverse
recovery time
Note: 3. Pulse Test
Symbol
V(BR)DSS
V(BR)GSS
IGSS
IDSS
VGS(off)
RDS(on)
|yfs|
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDF
trr
Min
200
±20
—
—
2.0
—
3.0
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
0.33
4.5
700
260
45
20
45
50
35
1.1
150
Max
—
—
±10
250
4.0
0.45
—
—
—
—
—
—
—
—
—
—
Unit
V
V
µA
µA
V
Ω
(Ta = 25°C)
Test conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±16 V, VDS = 0
VDS =160 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 4 A, VGS = 10 V*3
S ID = 4 A, VDS = 10 V*3
pF VDS = 10 V, VGS = 0,
pF f = 1 MHz
pF
ns ID = 4 A, VGS = 10 V,
ns RL = 7.5 Ω
ns
ns
V IF = 7 A, VGS = 0
ns IF = 7 A, VGS = 0,
diF/dt = 100 A/µs
Rev.2.00 Sep 07, 2005 page 2 of 6
Free Datasheet http://www.datasheet4u.com/
2SK1957
Main Characteristics
Power vs. Temperature Derating
60
40
20
0 50 100 150
Case Temperature TC (°C)
Typical Output Characteristics
10
10 V 6 V
8
5.5 V
Pulse Test
6 5V
4 4.5 V
2 4V
VGS = 3.5 V
0 4 8 12 16 20
Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
2.0
1.6 5 A
1.2 Pulse Test
0.8 2 A
0.4 I D= 1 A
0 4 8 12 16 20
Gate to Source Voltage VGS (V)
Rev.2.00 Sep 07, 2005 page 3 of 6
Maximum Safe Operation Area
50
30
10
3
1
0.3
0.1
0.05
1
10
100 s
DC
OPpWera=ti1o0n1m(Tmscs(=1
s
Shot)
25°C)
Ta = 25°C
3 10 30 100 300 1000
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
10
8
Pulse Test
VDS = 10 V
6
4
75°C
2
Tc = 25°C
–25°C
0 2 4 6 8 10
Gate to Source Voltage VGS (V)
Static Drain to Source on State
Resistance vs. Drain Current
10
5 Pulse Test
2
VGS = 10 V
1
0.5
15 V
0.2
0.1
0.5
12
5 10 20
Drain Current ID (A)
50
Free Datasheet http://www.datasheet4u.com/
