TC74ACT74P/F/FN/FT
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TC74ACT74P,TC74ACT74F,TC74ACT74FN,TC74ACT74FT
Dual D-Type Flip Flop with Preset and Clear
The TC74ACT74 is an advanced high speed CMOS D-FLIP
FLOP fabricated with silicon gate and double-layer metal wiring
C2MOS technology.
It achieves the high speed operation similar to equivalent
Bipolar Schottky TTL while maintaining the CMOS low power
dissipation.
This device may be used as a level converter for interfacing
TTL or NMOS to High Speed CMOS. The inputs are compatible
with TTL, NMOS and CMOS output voltage levels.
The signal level applied to the D INPUT is transferred to Q
OUTPUT during the positive going transition of the CK pulse.
CLR and PR are independent of the CK and are
accomplished by setting the appropriate input to an “L” level.
All inputs are equipped with protection circuits against static
discharge or transient excess voltage.
Features
• High speed: fmax = 180 MHz (typ.) at VCC = 5 V
• Low power dissipation: ICC = 4 μA (max) at Ta = 25°C
• Compatible with TTL outputs: VIL = 0.8 V (max)
VIH = 2.0 V (min)
• Symmetrical output impedance: |IOH| = IOL = 24 mA (min)
Capability of driving 50 Ω
transmission lines.
• Balanced propagation delays: tpLH ∼− tpHL
• Pin and function compatible with 74F74
Note: xxxFN (JEDEC SOP) is not available in
Japan.
TC74ACT74P
TC74ACT74F
TC74ACT74FN
TC74ACT74FT
Weight
DIP14-P-300-2.54
SOP14-P-300-1.27A
SOL14-P-150-1.27
TSSOP14-P-0044-0.65A
: 0.96 g (typ.)
: 0.18 g (typ.)
: 0.12 g (typ.)
: 0.06 g (typ.)
1 2007-10-01
Free Datasheet http://www.datasheet4u.com/
Absolute Maximum Ratings (Note 1)
TC74ACT74P/F/FN/FT
Characteristics
Symbol
Rating
Unit
Supply voltage range
DC input voltage
DC output voltage
Input diode current
Output diode current
DC output current
DC VCC/ground current
Power dissipation
Storage temperature
VCC
VIN
VOUT
IIK
IOK
IOUT
ICC
PD
Tstg
−0.5 to 7.0
−0.5 to VCC + 0.5
−0.5 to VCC + 0.5
±20
±50
±50
±100
500 (DIP) (Note 2)/180 (SOP/TSSOP)
−65 to 150
V
V
V
mA
mA
mA
mA
mW
°C
Note 1:
Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or
even destruction.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 2: 500 mW in the range of Ta = −40°C to 65°C. From Ta = 65°C to 85°C a derating factor of −10 mW/°C
should be applied up to 300 mW.
Operating Ranges (Note)
Characteristics
Symbol
Rating
Unit
Supply voltage
Input voltage
Output voltage
Operating temperature
Input rise and fall time
VCC
VIN
VOUT
Topr
dt/dV
4.5 to 5.5
0 to VCC
0 to VCC
−40 to 85
0 to 10
V
V
V
°C
ns/V
Note: The operating ranges must be maintained to ensure the normal operation of the device.
Unused inputs must be tied to either VCC or GND.
3 2007-10-01
Free Datasheet http://www.datasheet4u.com/