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AWT6112 Datasheet Download - ANADIGICS

Номер произв AWT6112
Описание Power Amplifier Module
Производители ANADIGICS
логотип ANADIGICS логотип 



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AWT6112 Даташит, Описание, Даташиты
FEATURES
• InGaP HBT Technology
• High Efficiency: 54% AMPS, 38% CDMA
• Low Quiescent Current: 50 mA
• Low Leakage Current in Shutdown Mode: <5 µA
• Optimized for a 50 System
• Low Profile Surface Mount Package: 1.56mm Max
• CDMA 1XRTT Compliant
• CDMA 1xEV-DO Compliant
• RoHS Compliant Package Option, 250 oC MSL-3
AWT6112
Cellular Dual Mode AMPS/CDMA
3.4V/28dBm Linear Power Amplifier Module
PRELIMINARY DATA SHEET - Rev 1.6
APPLICATIONS
• Single Mode CDMA Wireless Handsets
• Dual Mode AMPS/CDMA Wireless Handsets
M7 Package
10 Pin 4 mm x 4 mm x 1.5 mm
Surface Mount Module
PRODUCT DESCRIPTION
The AWT6112 is a high power, high efficiency
amplifier module for dual mode AMPS/CDMA
wireless handset applications. The device is
manufactured on an advanced InGaP HBT MMIC
technology offering state-of-the-art reliability,
temperature stability, and ruggedness. Selectable
bias modes that optimize efficiency for different
output power levels, and a shutdown mode with low
leakage current, serve to increase handset talk and
standby time. The self contained 4 mm x 4 mm x 1.5 mm
surface mount package incorporates matching
networks optimized for output power, efficiency and
linearity in a 50 system.
GND at slug (pad)
VREF 1
10 GND
VMODE 2
Bias Control
9 GND
GND 3
8 RFOUT
RFIN 4
7 GND
VCC 5
6 VCC
Figure 1: Block Diagram
06/2005
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AWT6112 Даташит, Описание, Даташиты
AWT6112
VREF 1
VMODE 2
GND
10 GND
9 GND
GND 3
8 RFOUT
RFIN 4
7 GND
VCC 5
6 VCC
GND
Figure 2: Pinout (X-ray Top View)
Table 1: Pin Description
PIN NAME DESCRIPTION
1 VREF Reference Voltage
2 VMODE Mode Control
3 GND Ground
4
RFIN
RF Input
5 VCC Supply Voltage
6 VCC Supply Voltage
7 GND Ground
8 RFOUT RF Output
9 GND Ground
10 GND Ground
2 PRELIMINARY DATA SHEET - Rev 1.6
06/2005
Free Datasheet http://www.datasheet4u.com/







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AWT6112 Даташит, Описание, Даташиты
ELECTRICAL CHARACTERISTICS
Table 2: Absolute Minimum and Maximum Ratings
PARAMETER
MIN MAX UNIT
Supply Voltage (VCC )
DC Only
RF Drive < +5 dBm
0
0
+8
+6 (1)
V
Mode Control Voltage (VMODE)
0 +3.5
V
Reference Voltage (VREF)
0 +3.5
V
RF Input Power (PIN)
- +10 dBm
Storage Temperature (TSTG)
-40 +150
°C
Stresses in excess of the absolute ratings may cause permanent
damage. Functional operation is not implied under these conditions.
Exposure to absolute ratings for extended periods of time may
adversely affect reliability.
Notes:
(1) VSWR < 2:1
AWT6112
Table 3: Operating Ranges
PARAMETER
MIN TYP MAX UNIT
COMMENTS
Operating Frequency (f)
824 - 849 MHz
Supply Voltage (VCC)
Reference Voltage (VREF)
+3.2
+2.75
0
+3.4
+2.85
-
+4.2
+3.1
+0.5
V
V
PA "on"
PA "shut down"
Mode Control Voltage (VMODE)
+2.5 +2.85 +3.1
0 - +0.5
V
Low Bias Mode
High Bias Mode
RF Output Power (POUT)
+30.5 (1) +31.0
+27.5 (1) +28.0
-
-
dBm
AMPS Mode
CDMA Mode
Case Temperature (TC)
-30 - +85 °C
The device may be operated safely over these conditions; however, parametric performance is guaranteed
only over the conditions defined in the electrical specifications.
Notes:
(1) For operation at TC = 100 °C, POUT is derated an additional 0.5 dB for +3.2 V < VCC < +3.4 V.
PRELIMINARY DATA SHEET - Rev 1.6
06/2005
3
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