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AWT6113 Datasheet Download - ANADIGICS

Номер произв AWT6113
Описание Power Amplifier Module
Производители ANADIGICS
логотип ANADIGICS логотип 



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AWT6113 Даташит, Описание, Даташиты
FEATURES
• InGaP HBT Technology
• High Efficiency: 38%
• Low Quiescent Current: 44 mA
• Low Leakage Current in Shutdown Mode: <1 µA
• Optimized for a 50 System
• Low Profile Surface Mount Package: 1.56mm max
• CDMA 1XRTT Compliant
• CDMA 1xEV-DO Compliant
APPLICATIONS
• PCS CDMA Wireless Handsets
• Dual Band CDMA Wireless Handsets
AWT6113
PCS/CDMA 3.4V/28dBm
Linear Power Amplifier Module
PRELIMINARY DATA SHEET - Rev 1.4
M7 Package
10 Pin 4mm x 4mm
Surface Mount Module
PRODUCT DESCRIPTION
The AWT6113 is a high power, high efficiency
amplifier module for PCS/CDMA wireless handset
applications. The device is manufactured on an
advanced InGaP HBT MMIC technology offering
state-of-the-art reliability, temperature stability, and
ruggedness. Selectable bias modes that optimize
efficiency for different output power levels, and
a shutdown mode with low leakage current, serve to
increase handset talk and standby time. The
self-contained 4mm x 4mm surface mount package
incorporates matching networks optimized for output
power, efficiency and linearity in a 50 system.
GND at slug (pad)
VCC 1
10 VCC
RFIN 2
9 GND
GND 3
8 RFOUT
VMODE 4
Bias Control
7 GND
VREF 5
6 GND
Figure 1: Block Diagram
12/2002
Free Datasheet http://www.datasheet4u.com/







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AWT6113 Даташит, Описание, Даташиты
AWT6113
VCC 1
RFIN 2
GND
10 VCC
9 GND
GND 3
8 RFOUT
VMODE 4
7 GND
VREF
56
GND
Figure 2: Pinout (X-ray Top View)
GND
Table 1: Pin Description
PIN NAME DESCRIPTION
1 VCC Supply Voltage
2
RFIN
RF Input
3 GND Ground
4 VMODE Mode Control Voltage
5 VREF Reference Voltage
6 GND Ground
7 GND Ground
8 RFOUT RF Output
9 GND Ground
10 VCC Supply Voltage
2 PRELIMINARY DATA SHEET - Rev 1.4
12/2002
Free Datasheet http://www.datasheet4u.com/







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AWT6113 Даташит, Описание, Даташиты
ELECTRICAL CHARACTERISTICS
Table 2: Absolute Minimum and Maximum Ratings
PARAMETER
MIN MAX UNIT
Supply Voltage (VCC )
0 +5
V
Mode Control Voltage (VMODE)
0 +3.5
V
Reference Voltage (VREF)
0 +3.5
V
RF Input Power (PIN)
Storage Temperature (TSTG)
- +10
-40 +150
dBm
°C
Stresses in excess of the absolute ratings may cause permanent
damage. Functional operation is not implied under these conditions.
Exposure to absolute ratings for extended periods of time may
adversely affect reliability.
AWT6113
Table 3: Operating Ranges
PARAMETER
MIN TYP MAX UNIT
COMMENTS
Operating Frequency (f)
1850 - 1910 MHz
Supply Voltage (VCC)
Reference Voltage (VREF)
+3.2
+2.75
0
+3.4
+2.85
-
+4.2
+3.1
+0.5
V
V
PA "on"
PA "shut down"
Mode Control Voltage (VMODE)
+2.5 +2.85 +3.1
0 - +0.5
V
Low Bias Mode
High Bias Mode
RF Output Power (POUT)
+28.0
-
- dBm
Case Temperature (TC)
-30 - +85 oC
The device may be operated safely over these conditions; however, parametric performance is guaranteed
only over the conditions defined in the electrical specifications.
PRELIMINARY DATA SHEET - Rev 1.4
12/2002
3
Free Datasheet http://www.datasheet4u.com/








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