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2SD882H PDF даташит

Спецификация 2SD882H изготовлена ​​​​«SEMTECH» и имеет функцию, называемую «NPN Silicon Power Transistor».

Детали детали

Номер произв 2SD882H
Описание NPN Silicon Power Transistor
Производители SEMTECH
логотип SEMTECH логотип 

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2SD882H Даташит, Описание, Даташиты
ST 2SD882H
NPN Silicon Power Transistor
The transistor is subdivided into four groups, R,
Q, P and E, according to its DC current gain.
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Collector Current (pulse)
Total Power Dissipation(Ta = 25 OC)
Total Power Dissipation(TC = 25 OC)
Junction Temperature
Storage Temperature Range
E
C
B
TO-126 Plastic Package
Symbol
VCBO
VCEO
VEBO
IC
ICP
Ptot
Ptot
Tj
TS
Value
60
30
5
3
7
1
10
150
- 55 to + 150
Unit
V
V
V
A
A
W
W
OC
OC
Characteristics at Ta = 25 OC
Parameter
DC Current Gain
at VCE = 2 V, IC = 1 A
Current Gain Group
at VCE = 2 V, IC = 20 mA
Collector Cutoff Current
at VCB = 60 V
Emitter Cutoff Current
at VEB = 3 V
Collector Emitter Saturation Voltage
at IC = 2 A, IB = 0.2 A
Base Emitter Saturation Voltage
at IC = 2 A, IB = 0.2 A
Gain Bandwidth Product
at VCE = 5 V, IC = 0.1 A
Output Capacitance
at VCB = 10 V, f = 1 MHz
Symbol Min.
R
Q
P
E
hFE
hFE
hFE
hFE
hFE
ICBO
IEBO
VCEsat
VBEsat
fT
Cob
60
100
160
200
30
-
-
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
90
45
Max. Unit
120 -
200 -
320 -
400 -
--
1 µA
1 µA
0.5 V
2V
- MHz
- pF
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 13/09/2006
Free Datasheet http://www.datasheet4u.com/









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2SD882H Даташит, Описание, Даташиты
ST 2SD882H
TYPICAL CHARACTERISTICS (Ta=25oC)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
NOTE
1.Aluminum heat sink
of 1.0 mm thickness.
10 2.With no insulator film.
3.With silicon compound.
8
6
4
2
0
0
100cm 2
25cm 2
9cm 2
Without heat sink
50 100 150
Ta-Ambient Temperature -o C
SAFE OPERATING AREAS
10 I C(pulse) MAX.(PW 10ms,Duty Cycle 50%)
3
1
0.3
I C(DC) MAX.
10
1
ms
ms
DC
PW=100
(Single nonreLDpimeistisitteiipvdaetpiounlse)
S/b Limited
s
0.1
0.03
0.01
NOTE
1.TC=25o C
2.Curves must be derated
Iinearly with increase of
temperature and Duty Cycle.
1 3 6 10
30 60 100
VCE-Collector to Emitter Voltage-V
BASE AND COLLECTOR SATURATION
VOLTAGE vs. COLLECTOR CURRENT
10
3
1 VBE(sat)
0.6
0.3
0.1
0.06
0.03
0.01
0.006
0.003
VCE(sat)
I C=10.IB
Pulse Test
0.001 0.003 0.01 0.03 0.1 0.3 1 3 10
I C-Collector Current-A
DERATING CURVES FOR ALL TYPES
100
80
60
40
20
S/b Limited
0 50 100 150
Tc-Case Temperature -oC
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
2.0
Pulse Test
1.6
10
9
8
1.2 7
6
5
0.8 4
0.4 3 2
I B=1mA
0
4
8
12 16
20
VCE-Collector to Emitteor Voltage-V
1000
300
100
30
GAIN BANDWIDTH PRODUCT vs.
COLLCETOR CURRENT
VCE=5.0V
Forced air
cooling
(with heat sink)
10
3
1
0.01
0.03
0.1
0.3
I C-Collcetor Current-A
1
THERMAL RESISTANCE vs.
PULSE WIDTH
VCE=10V
I C=1.0A
30 Duty=0.001
10
3
1
0.3
0.1 0.3 1 3 10 30 100 300 1000
PW-Pulse Width-mS
DC CURRENT GAIN, BASE TO EMITTER
VOLTAGE vs. COLLECTOR CURRENT
1000
300
h FE
100
60
30
VCE=2.0V
Pulse Test
3
10 VBE
6
3
1
0.6
0.3
1
0.001 0.003 0.01 0.03 0.1 0.3 1 3
10 0.1
I C-Collector Current-A
INPUT AND OUTPUT CAPACITANCE vs.
REVERSE VOLTAGE
f=1.0MHz
I E=0(Cob)
300 I C=0(Cib)
Cib
100
60
30 Cob
10
6
3
1
3 6 10
30 60
VCB-Collector to Base Voltage-V
VEB-Emitter to Base Voltage-V
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 13/09/2006
Free Datasheet http://www.datasheet4u.com/










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