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Número de pieza | WPM9435 | |
Descripción | P-Channel Enhancement Mode MOSFET | |
Fabricantes | WillSEMI | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de WPM9435 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! WPM9435
P-Channel Enhancement Mode MOSFET
Description
The WPM9435 is the P-Channel logic enhancement mode
power field effect transistors are produced using high cell
density, DMOS trench technology.
This high density process is especially tailored to minimize
on-state resistance. These devices are particularly suited for low
voltage application, notebook computer power management and
other battery powered circuits where high-side switching.
Features
z -30V/-5A,RDS(ON)= 36m@VGS=- 10V
z -30V/-4A,RDS(ON)= 53m@VGS=-4.5V
z Super high density cell design for extremely low RDS (ON)
z Exceptional on-resistance and maximum DC current
capability
z SOP – 8P package design
Application
z Power Management in Note book
z Portable Equipment
z Battery Powered System
z DC/DC Converter
z Load Switch
Order information
3DUW1XPEHU
WPM9435-8/TR
3DUW1XPEHU
SOP-8P
WPM9435
www.willsemi.com
D D DD
S SSG
WPM9435
YYWW
YYWW = Date Code
WPM9435 = Specific Device Code
6KLSSLQJ
2500Tape&Reel
http://www.willsemi.com
Page 1
1/2009 Rev 1.3
Free Datasheet http://www.datasheet4u.com/
1 page WPM9435
10
9
8
7
6
5
4
3
2
1
0
0
VDS=-15V
ID=-6A
2 4 6 8 10 12 14
-Qg (nC)
Gate-Charge Characteristics
16
100 TJ(Max)=150°C
TA=25°C
RDS(ON)
10 limited
10Ps
100Ps
0.1s 1ms
10ms
1 1s
10s
DC
0.1
0.1
1 10
-VDS (Volts)
Maximum Forward Biased Safe
Operating Area (Note E)
100
1200
1000
800
Ciss
600
400
Coss
200
Crss
0
0
5
10 15 20 25
-VDS (Volts)
Capacitance Characteristics
30
40
TJ(Max)=150°C
TA=25°C
30
20
10
0
0.001 0.01
0.1 1 10
Pulse Width (s)
100 1000
Single Pulse Power Rating Junction-to-
Ambient (Note E)
10
D=Ton/T
TJ,PK=TA+PDM.ZTJA.RTJA
RTJA=40°C/W
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONE0N.T1S IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOSPDD OES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TTOonIMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10 100 1000
Pulse Width (s)
Normalized Maximum Transient Thermal Impedance
http://www.willsemi.com
Page 4
1/2009 Rev 1.3
Free Datasheet http://www.datasheet4u.com/
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet WPM9435.PDF ] |
Número de pieza | Descripción | Fabricantes |
WPM9435 | P-Channel Enhancement Mode MOSFET | WillSEMI |
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