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6MBI75UC-120 PDF даташит

Спецификация 6MBI75UC-120 изготовлена ​​​​«Fuji» и имеет функцию, называемую «IGBT Module».

Детали детали

Номер произв 6MBI75UC-120
Описание IGBT Module
Производители Fuji
логотип Fuji логотип 

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6MBI75UC-120 Даташит, Описание, Даташиты
6MBI75UC-120
IGBT Module U-Series 1200V / 75A 6 in one-package
Features
· High speed switching
· Voltage drive
· Low inductance module structure
Applications
· Inverter for Motor drive
· AC and DC Servo drive amplifier
· Uninterruptible power supply
· Industrial machines, such as Welding machines
Maximum ratings and characteristics
Absolute maximum ratings (at Tc=25°C unless otherwise specified)
Item
Collector-Emitter voltage
Gate-Emitter voltaga
Collector current
Symbol
VCES
VGES
IC
ICp
Collector Power Dissipation
Junction temperature
Storage temperature
Isolation voltage between terminal and copper base *1
Screw Torque
Mounting *2
-IC
-IC pulse
PC
Tj
Tstg
Viso
Conditions
Continuous Tc=25°C
Tc=80°C
1ms Tc=25°C
Tc=80°C
1 device
AC:1min.
*1 : All terminals should be connected together when isolation test will be done.
*2 : Recommendable value : 2.5 to 3.5 N·m(M5)
Rating
1200
±20
100
75
200
150
75
150
390
+150
-40 to +125
2500
3.5
Unit
V
V
A
W
°C
VAC
N·m
Electrical characteristics (at Tj=25°C unless otherwise specified)
Item
Symbols Conditions
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Turn-on time
Turn-off time
Forward on voltage
Reverse recovery time
Lead resistance, terminal-chip*3
Shunt resistance
ICES
IGES
VGE(th)
VCE(sat)
(chip)
Cies
ton
tr
tr(i)
toff
tf
VF
(chip)
trr
R lead
R shunt
VGE=0V, VCE=1200V
VCE=0V, VGE=±20V
VCE=20V, IC=75mA
VGE=15V, IC=75A Tj=25°C
Tj=125°C
VCE=10V, VGE=0V, f=1MHz
VCC=600V
IC=75A
VGE=±15V
RG=9.1
VGE=0V
Tj=25°C
IF=75A
Tj=125°C
IF=75A
Without shunt resistance
Resistance of R1,R2,R3 *4
*3: Biggest internal terminal resistance among arm.
*4: R1, R2,R3 is shown in equivalent circuit (p5)
Characteristics
Min.
Typ.
––
––
4.5 6.5
– 1.75
– 2.00
–8
– 0.36
– 0.21
– 0.03
– 0.37
– 0.07
– 1.60
– 1.70
––
– 5.7
– 2.4
Max.
1.0
200
8.5
2.10
1.20
0.60
1.00
0.30
1.90
0.35
Unit
mA
nA
V
V
nF
µs
V
µs
m
Thermal resistance characteristics
Items
Symbols Conditions
Characteristics
Thermal resistance
Contact Thermal resistance
Rth(j-c)
Rth(j-c)
Rth(c-f)*5
IGBT
FWD
With thermal compound
Min.
Typ.
0.05
*5 : This is the value which is defined mounting on the additional cooling fin with thermal compound.
Max.
0.32
0.49
Unit
°C/W
°C/W
°C/W









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6MBI75UC-120 Даташит, Описание, Даташиты
6MBI75UC-120
Characteristics (Representative)
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25°C / chip
200
VGE=20V 15V 12V
150
100
10V
50
0
0
8V
1 23 4
Collector-Emitter voltage : VCE [V]
5
Collector current vs. Collector-Emitter voltage (typ.)
VGE=15V / chip
200
T j=25°C
T j=125°C
150
100
50
0
0 12 3
Collector-Emitter voltage : VCE [V]
4
100.0
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f= 1M Hz, Tj= 25°C
Cies
10.0
IGBT Module
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 125°C / chip
200
VGE=20V 15V
12V
150
100
50
0
0
10V
8V
1 234
Collector-Emitter voltage : VCE [V]
5
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Tj=25°C / chip
10
8
6
4
Ic=150A
2 Ic=75A
Ic=37.5A
0
5 10 15 20 25
Gate - Emitter voltage : VGE [ V ]
Dynamic Gate charge (typ.)
Vcc=600V, Ic=75A, Tj= 25°C
VGE
Cres
1.0
Coes
0.1
0
10 20
Collector-Emitter voltage : VCE [V]
30
0
0
VCE
100 200 300
Gate charge : Qg [ nC ]
400









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6MBI75UC-120 Даташит, Описание, Даташиты
6MBI75UC-120
10000
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg=9.1, Tj= 25°C
IGBT Module
10000
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg=9.1, Tj=125°C
1000
100
1000
ton
toff
tr
100
tf
toff
ton
tr
tf
10
0
50 100
Collector current : Ic [ A ]
150
10000
Switching time vs. Gate resistance (typ.)
Vcc=600V, Ic=75A, VGE=±15V, Tj= 25°C
1000
ton
toff
tr
100
tf
10
1
10 100
Gate resistance : Rg [ ]
1000
Switching loss vs. Gate resistance (typ.)
Vcc=600V, Ic=75A, VGE=±15V, Tj= 125°C
70
60 Eon
50
40
30
20
10
0
1
Eoff
Err
10 100
Gate resistance : Rg [ ]
1000
10
0
50 100
Collector current : Ic [ A ]
150
Switching loss vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg=9.1
15
Eoff(125°C)
Eon(125°C)
10
5
0
0
Eoff(25°C)
Eon(25°C)
Err(125°C)
Err(25°C)
50 100
Collector current : Ic [ A ]
150
Reverse bias safe operating area (max.)
+VGE=15V,-VGE <= 15V, RG >= 9.1,Tj <= 125°C
200
150
100
50
0
0
250
500
750
1000
1250
Collector - Emitter voltage : VCE [ V ]










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Номер в каталогеОписаниеПроизводители
6MBI75UC-120IGBT Module U-SeriesFuji
Fuji
6MBI75UC-120IGBT ModuleFuji
Fuji

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