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PDF K4115 Data sheet ( Hoja de datos )
| Número de pieza | K4115 | |
| Descripción | MOSFET ( Transistor ) - 2SK4115 | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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 1. 7A, N-ch MOSFET - Toshiba  Hay una vista previa y un enlace de descarga de K4115 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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2SK4115
www.DataSheet4U.com TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π- MOSⅣ)
2SK4115
Switching Regulator Applications
• Low drain-source ON resistance: RDS (ON) = 1.6 Ω (typ.)
• High forward transfer admittance: ⎪Yfs⎪ = 5.0 S (typ.)
• Low leakage current: IDSS = 100 μA (max) (VDS = 720 V)
• Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Unit: mm
15.9max.
Ф3.2±0.2
Absolute Maximum Ratings (Ta = 25°C)
2.0±0.3
Characteristic
Symbol
Rating
Unit
1.0
＋0.3
－0.25
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
900
900
±30
7
21
150
491
7
15
150
−55~150
V
V
V
A
W
mJ
A
mJ
°C
°C
5.45±0.2
5.45±0.2
12 3
1. GATE
2. DRAIN (HEATSINK)
3. SOURCE
JEDEC
―
JEITA
SC-65
TOSHIBA
2−16C1B
Weight: 4.6 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the
absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Thermal Characteristics
Characteristic
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (ch-c)
Rth (ch-a)
0.833
50
°C/W
°C/W
Note 1: Ensure that the channel temperature does not exceed 150°C
during use of the device.
Note 2: VDD = 90 V, Tch = 25°C, L = 18.4 mH, RG = 25 Ω, IAR = 7 A
Note 3: Repetitive rating: pulse width limited by max junction temperature
This transistor is an electrostatic-sensitive device. Handle with care.
1
2
3
1 2007-07-24
Free Datasheet http://www.datasheet.in/
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet K4115.PDF ] | |
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