B1416 PDF даташит
Спецификация B1416 изготовлена «Panasonic» и имеет функцию, называемую «PNP Transistor - 2SB1416». |
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Детали детали
Номер произв | B1416 |
Описание | PNP Transistor - 2SB1416 |
Производители | Panasonic |
логотип |
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Power Transistors
2SB1416
Silicon PNP epitaxial planar type
For low-frequency power amplification
Complementary to 2SD2136
■ Features
• High forward current transfer ratio hFE which has satisfactory
linearity
• Low collector-emitter saturation voltage VCE(sat)
• Allowing automatic insertion with radial taping
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
−60
−60
−5
−3
−5
1.5
150
−55 to +150
Unit
V
V
V
A
A
W
°C
°C
7.5±0.2
Unit: mm
4.5±0.2
0.65±0.1
0.7±0.1
1.15±0.2
0.85±0.1
1.0±0.1 0.8 C
0.7±0.1
1.15±0.2
0.8 C
0.5±0.1
0.4±0.1
0.8 C 1 2 3
2.5±0.2
2.5±0.2
1: Emitter
2: Collector
3: Base
MT-3-A1 Package
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage (Base open) VCEO IC = −30 mA, IB = 0
−60
V
Base-emitter voltage
VBE VCE = −4 V, IC = −3 A
−1.8 V
Collector-emitter cutoff current (E-B short) ICES VCE = −60 V, VBE = 0
−200 µA
Collector-emitter cutoff current (Base open) ICEO VCE = −30 V, IB = 0
−300 µA
Emitter-base cutoff current (Collector open) IEBO VEB = −5 V, IC = 0
−1 mA
Forward current transfer ratio
hFE1 * VCE = −4 V, IC = −1 A
40 250
hFE2 VCE = −4 V, IC = −3 A
10
Collector-emitter saturation voltage
VCE(sat) IC = −3 A, IB = − 0.375A
−1.2 V
Transition frequency
fT VCB = −5 V, IE = 0.1 A, f = 200 MHz 270 MHz
Turn-on time
ton IC = −1 A, IB1 = − 0.1 A, IB2 = 0.1 A 0.5 µs
Storage time
tstg
1.2 µs
Fall time
tf
0.3 µs
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
P
Q
R
hFE1
40 to 90
70 to 150
120 to 250
Publication date: March 2003
SJD00071BED
1
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2SB1416
PC Ta
2.0
Without heat sink
1.6
1.2
0.8
0.4
0
0 40 80 120 160
Ambient temperature Ta (°C)
IC VCE
−1.2
Ta=25˚C
−1.0 IB=–8mA
− 0.8
− 0.6
− 0.4
–7mA
–6mA
–5mA
–4mA
–3mA
− 0.2
–2mA
–1mA
0
0 −2 −4 −6 −8 −10 −12
Collector-emitter voltage VCE (V)
IC VBE
−1.2
VCE=–4V
25˚C
−1.0
Ta=75˚C
–25˚C
− 0.8
− 0.6
− 0.4
− 0.2
0
0 − 0.2 − 0.4 − 0.6 − 0.8 −1.0 −1.2
Base-emitter voltage VBE (V)
VCE(sat) IC
−10
IC/IB=8
−1
− 0.1
Ta=75˚C
− 0.01
Ta=25˚C
Ta=–25˚C
− 0.001
−1
−10
−100
−1 000
Collector current IC (A)
hFE IC
240
VCE=–4V
200
Ta=75˚C
160
25˚C
120 –25˚C
80
40
0
−1
−10
−100
−1 000
Collector current IC (A)
fT IE
300
VCB=–5V
f=200MHz
TC=25˚C
250
200
150
100
50
0
− 0.01
− 0.1
−1
Collector current IC (A)
−10
Safe operation area
−100
Single pulse
TC=25˚C
−10
ICP
IC
−1
t=10ms
t=1ms
DC
− 0.1
− 0.01
− 0.1
−1
−10 −100
Collector-emitter voltage VCE (V)
Rth t
104
Without heat sink
103
102
10
1
10−1
10−4
10−3
10−2
10−1
1
10 102 103 104
Time t (s)
2 SJD00071BED
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Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government
if any of the products or technologies described in this material and controlled under the "Foreign
Exchange and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteris-
tics and applied circuits examples of the products. It neither warrants non-infringement of intellec-
tual property right or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the
product or technologies as described in this material.
(4) The products described in this material are intended to be used for standard applications or general
electronic equipment (such as office equipment, communications equipment, measuring instru-
ments and household appliances).
Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
combustion equipment, life support systems and safety devices) in which exceptional quality and
reliability are required, or if the failure or malfunction of the products may directly jeopardize life or
harm the human body.
• Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without
notice for modification and/or improvement. At the final stage of your design, purchasing, or use of
the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that
the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maxi-
mum rating, the range of operating power supply voltage, and heat radiation characteristics. Other-
wise, we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of
incidence of break down and failure mode, possible to occur to semiconductor products. Measures
on the systems such as redundant design, arresting the spread of fire or preventing glitch are
recommended in order to prevent physical injury, fire, social damages, for example, by using the
products.
(7) When using products for which damp-proof packing is required, observe the conditions (including
shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets
are individually exchanged.
(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written
permission of Matsushita Electric Industrial Co., Ltd.
2002 JUL
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