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PDF C3419 Data sheet ( Hoja de datos )
| Número de pieza | C3419 | |
| Descripción | NPN Transistor - 2SC3419 | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de C3419 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC3419
Medium-Power Amplifier Applications.
2SC3419
Unit: mm
• Low saturation voltage: VCE (sat) = 0.25 V (typ.)
(IC = 500 mA, IB = 50 mA)
• High collector power dissipation: PC = 1.2 W (Ta = 25°C)
• Complementary to 2SA1356
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
VCBO 40 V
VCEO 40 V
Emitter-base voltage
Collector current
Base current
VEBO
IC
IB
5V
800 mA
80 mA
Collector power
dissipation
Ta = 25°C
Tc = 25°C
PC
1.2
W
5
JEDEC
―
Junction temperature
Storage temperature range
Tj 150 °C
Tstg
−55 to 150
°C
JEITA
TOSHIBA
―
2-8H1A
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
Weight: 0.82 g (typ.)
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1 2006-11-09
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet C3419.PDF ] | |
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