SBL20U120F PDF даташит
Спецификация SBL20U120F изготовлена «SeCoS» и имеет функцию, называемую «Low VF Trench MOS Barrier Schottky Rectifier». |
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Детали детали
Номер произв | SBL20U120F |
Описание | Low VF Trench MOS Barrier Schottky Rectifier |
Производители | SeCoS |
логотип |
2 Pages
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Elektronische Bauelemente
SBL20U120F
Voltage 120V 20.0 Amp
Low VF Trench MOS Barrier Schottky Rectifier
RoHS Compliant Product
A suffix of “-C” specifies halogen free
FEATURES
Trench MOS Schottky technology
Low forward voltage drop
Low reverse current
High current capability
High reliability
High surge current capability
Epitaxial construction
ITO-220
BN
MA
D
E
MECHANICAL DATA
Case: Molded plastic
Epoxy: UL94V-0 rate flame retardant
Lead: Lead solderable per MIL-STD-202
method 208 guaranteed
Polarity: As Marked
Mounting position: Any
Weight: 1.98 g (Approximate)
1
3
H JC
K
LL
G
F
REF.
Millimeter
Min. Max.
REF.
Millimeter
Min. Max.
A 14.60 15.70 H
2.70 4.00
B
9.50 10.50
J
0.90 1.50
C 12.60 14.00 K
0.50 0.90
D 4.30 4.70 L 2.34 2.74
2E
2.30
3.2
M 2.40 3.00
F 2.30 2.90 N φ 3.0 φ 3.4
G 0.30 0.75
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Rating 25°C ambient temperature unless otherwise s pecified. Single phase half wave, 60Hz, resistive or inductive load.
For capacitive load, de-rate current by 20%.)
Parameter
Symbol
Rating
Maximum Recurrent Peak Reverse Voltage
Working Peak Reverse Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified (Per Leg)
Current
(Per Device)
Peak Forward Surge Current, 8.3 ms single half sine-wave
Voltage Rate of Chance (Rated VR)
Typical Thermal Resistance
Operating and Storage Temperature Range
VRRM
VRSM
VDC
IF
IFSM
dv/dt
RθJC
TJ,TSTG
120
120
120
10
20
150
10000
4
-40~150
Unit
V
V
V
A
A
V / µs
°C /W
°C
ELECTRICAL CHARACTERISTICS
Parameter
Symbol
Typ.
0.66
Maximum Instantaneous Forward
Voltage
0.71
VF 0.8
0.65
Maximum DC Reverse Current
at Rated DC Blocking Voltage 2
-
IR -
Typical Junction Capacitance 1
CJ 210
NOTES:
1. Measured at 1MHz and applied reverse voltage of 5.0V D.C.
2. Pulse Test:Pulse Width = 300 µs, Duty Cycle ≦ 2.0%.
http://www.SeCoSGmbH.com/
05-Jun-2013 Rev. A
Max.
0.7
0.75
0.85
-
0.1
10
-
Unit
V
mA
pF
Test Condition
IF = 3A, TJ = 25°C
IF = 5A, TJ = 25°C
IF = 10 A, TJ = 25°C
IF = 10 A, TJ = 125°C
TJ=25°C
TJ=100°C
Any changes of specification will not be informed individually.
Page 1 of 2
Free Datasheet http://www.datasheet4u.net/
No Preview Available ! |
Elektronische Bauelemente
SBL20U120F
Voltage 120V 20.0 Amp
Low VF Trench MOS Barrier Schottky Rectifier
RATINGS AND CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
05-Jun-2013 Rev. A
Any changes of specification will not be informed individually.
Page 2 of 2
Free Datasheet http://www.datasheet4u.net/
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Номер в каталоге | Описание | Производители |
SBL20U120 | Low VF Trench MOS Barrier Schottky Rectifier | SeCoS |
SBL20U120F | Low VF Trench MOS Barrier Schottky Rectifier | SeCoS |
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