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18T10AGH Datasheet Download - Advanced Power Electronics

Номер произв 18T10AGH
Описание AP18T10AGH
Производители Advanced Power Electronics
логотип Advanced Power Electronics логотип 

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18T10AGH Даташит, Описание, Даташиты
Advanced Power
Electronics Corp.
AP18T10AGH-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Simple Drive Requirement
Lower Gate Charge
Fast Switching Characteristic
Halogen Free & RoHS Compliant Product
G
Description
D
S
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
BVDSS
RDS(ON)
ID
100V
160mΩ
9A
G
D
S
TO-252(H)
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
PD@TA=25
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating
100
+20
9
5.6
30
27.8
2
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W
Thermal Data
Symbol
Parameter
Rthj-c
Rthj-a
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)3
Value
4.5
62.5
Units
/W
/W
Data and specifications subject to change without notice
1
201006011
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18T10AGH Даташит, Описание, Даташиты
AP18T10AGH-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
Static Drain-Source On-Resistance2 VGS=10V, ID=5A
VGS=4.5V, ID=1A
Gate Threshold Voltage
VDS=VGS, ID=250uA
Forward Transconductance
VDS=10V, ID=5A
Drain-Source Leakage Current
VDS=80V, VGS=0V
Drain-Source Leakage Current (Tj=125oC) VDS=80V ,VGS=0V
Gate-Source Leakage
Total Gate Charge2
VGS=+20V, VDS=0V
ID=5A
Gate-Source Charge
VDS=80V
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
VGS=4.5V
VDS=50V
Rise Time
ID=5A
Turn-off Delay Time
RG=3.3Ω
Fall Time
VGS=10V
Input Capacitance
VGS=0V
Output Capacitance
VDS=25V
Reverse Transfer Capacitance
f=1.0MHz
100 - - V
- - 160 mΩ
- - 225 mΩ
1 - 3V
-5-S
- - 25 uA
- - 250 uA
- - +100 nA
- 6 9.6 nC
- 1.7 - nC
- 4 - nC
- 6 - ns
- 10 - ns
- 14.5 - ns
- 4 - ns
- 400 640 pF
- 55 - pF
- 35 - pF
Source-Drain Diode
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage2
Reverse Recovery Time2
Reverse Recovery Charge
Test Conditions
IS=5A, VGS=0V
IS=5A, VGS=0V
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.3 V
- 40 - ns
- 75 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
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18T10AGH Даташит, Описание, Даташиты
20
T C = 25 o C
16
12
10V
7.0V
6.0V
5.0V
8
V G = 4.0V
4
0
0246
V DS , Drain-to-Source Voltage (V)
8
Fig 1. Typical Output Characteristics
200
I D =1A
T C =25 o C
180
160
140
120
100
2468
V GS Gate-to-Source Voltage (V)
10
Fig 3. On-Resistance v.s. Gate Voltage
10
8
6
T j =150 o C
T j =25 o C
4
2
0
0 0.2 0.4 0.6 0.8 1 1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
AP18T10AGH-HF
16
T C = 150 o C
12
8
10V
8.0V
7.0V
6.0V
V G = 5.0V
4
0
0 2 4 6 8 10 12
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.4
I D =5A
V G =10V
2.0
1.6
1.2
0.8
0.4
-50
0
50 100
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
150
1.2
0.8
0.4
0.0
-50 0 50 100 150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
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