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даташит 11N80C3 PDF ( Datasheet )

11N80C3 Datasheet Download - Infineon

Номер произв 11N80C3
Описание SPP11N80C3
Производители Infineon
логотип Infineon логотип 

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11N80C3 Даташит, Описание, Даташиты
SPP11N80C3
SPA11N80C3
Cool MOS™ Power Transistor
Feature
New revolutionary high voltage technology
Ultra low gate charge
VDS
RDS(on)
ID
800 V
0.45
11 A
Periodic avalanche rated
PG-TO220-3-31 PG-TO220
Extreme dv/dt rated
Ultra low effective capacitances
Improved transconductance
P-TO220-3-31
3
12
PG-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)
Type
SPP11N80C3
SPA11N80C3
Package
Ordering Code
PG-TO220 Q67040-S4438
PG-TO220-3-31 SP000216320
Marking
11N80C3
11N80C3
Maximum Ratings
Parameter
Symbol
Continuous drain current
TC = 25 °C
TC = 100 °C
Pulsed drain current, tp limited by Tjmax
Avalanche energy, single pulse
ID=2.2A, VDD=50V
Avalanche energy, repetitive tAR limited by Tjmax2)
ID=11A, VDD=50V
Avalanche current, repetitive tAR limited by Tjmax
Gate source voltage
Gate source voltage AC (f >1Hz)
Power dissipation, TC = 25°C
Operating and storage temperature
ID
ID puls
EAS
EAR
IAR
VGS
VGS
Ptot
Tj , Tstg
Value
SPP
SPA
11 111)
7.1 7.11)
33 33
470 470
Unit
A
A
mJ
0.2 0.2
11 11
±20 ±20
±30 ±30
156 41
-55...+150
A
V
W
°C
Rev. 2.4
Page 1
2005-08-24
Free Datasheet http://www.datasheet4u.net/







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11N80C3 Даташит, Описание, Даташиты
SPP11N80C3
SPA11N80C3
Maximum Ratings
Parameter
Drain Source voltage slope
VDS = 640 V, ID = 11 A, Tj = 125 °C
Thermal Characteristics
Parameter
Thermal resistance, junction - case
Thermal resistance, junction - case, FullPAK
Thermal resistance, junction - ambient, leaded
Thermal resistance, junction - ambient, FullPAK
Soldering temperature, wavesoldering
1.6 mm (0.063 in.) from case for 10s 3)
Symbol
dv/dt
Value
50
Unit
V/ns
Symbol
RthJC
RthJC_FP
RthJA
RthJA_FP
Tsold
min.
-
-
-
-
-
Values
typ. max.
- 0.8
- 3.7
- 62
- 80
- 260
Unit
K/W
°C
Electrical Characteristics, at Tj=25°C unless otherwise specified
Parameter
Symbol Conditions
min.
Drain-source breakdown voltage
Drain-Source avalanche
breakdown voltage
V(BR)DSS VGS=0V, ID=0.25mA
V(BR)DS VGS=0V, ID=11A
800
-
Gate threshold voltage
Zero gate voltage drain current
VGS(th)
IDSS
Gate-source leakage current
IGSS
Drain-source on-state resistance RDS(on)
Gate input resistance
RG
ID=680µA, VGS=VDS
VDS=800V, VGS=0V,
Tj=25°C
Tj=150°C
VGS=20V, VDS=0V
VGS=10V, ID=7.1A
Tj=25°C
Tj=150°C
f=1MHz, open drain
2.1
-
-
-
-
-
-
Values
typ.
-
870
3
0.5
-
-
0.39
1.1
0.7
max.
-
-
3.9
20
200
100
0.45
-
-
Unit
V
µA
nA
Rev. 2.4
Page 2
2005-08-24
Free Datasheet http://www.datasheet4u.net/







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11N80C3 Даташит, Описание, Даташиты
SPP11N80C3
SPA11N80C3
Electrical Characteristics
Parameter
Symbol
Conditions
Transconductance
gfs
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance Crss
Effective output capacitance,4) Co(er)
energy related
Effective output capacitance,5) Co(tr)
time related
VDS2*ID*RDS(on)max,
ID=7.1A
VGS=0V, VDS=25V,
f=1MHz
VGS=0V,
VDS=0V to 480V
Turn-on delay time
Rise time
Turn-off delay time
Fall time
td(on)
tr
td(off)
tf
VDD=400V, VGS=0/10V,
ID=11A,
RG=7.5
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Qgs VDD=640V, ID=11A
Qgd
Qg VDD=640V, ID=11A,
VGS=0 to 10V
V(plateau) VDD=640V, ID=11A
min.
-
Values
typ. max.
7.5 -
Unit
S
- 1600 - pF
- 800 -
- 40 -
- 44.3 -
- 33.9 -
- 25 - ns
- 15 -
- 72 82
- 7 10
- 6 - nC
- 25 -
- 50 60
- 6 -V
1Limited only by maximum temperature
2Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f.
3Soldering temperature for TO-263: 220°C, reflow
4Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.
5Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
Rev. 2.4
Page 3
2005-08-24
Free Datasheet http://www.datasheet4u.net/










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