HFM105 PDF даташит
Спецификация HFM105 изготовлена «Formosa MS» и имеет функцию, называемую «Ultra fast recovery type». |
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Детали детали
Номер произв | HFM105 |
Описание | Ultra fast recovery type |
Производители | Formosa MS |
логотип |
2 Pages
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Chip Silicon Rectifier
HFM101 THRU HFM107
Formosa MS
Ultra fast recovery type
Features
Plastic package has Underwriters Laboratory
FlammabilityClassification 94V-O Utilizing Flame
Retardant Epoxy Molding Compound.
For surface mounted applications.
Exceeds environmental standards of MIL-S-19500 /
228
Low leakage current.
Mechanical data
Case : Molded plastic, JEDEC DO-214AC
Terminals : Solder plated, s olderable per MIL-STD-750,
Method 2026
Polarity : Indicated by cathode band
Mounting Position : Any
Weight : 0.0015 ounce, 0.05 gram
SMA
0.185(4.8)
0.177(4.4)
0.012(0.3) Typ.
0.110(2.8)
0.094(2.4)
0.165(4.2)
0.150(3.8)
0.040(1.0) Typ.
0.067(1.7)
0.060(1.5)
0.040 (1.0) Typ.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS
PARAMETER
Forward rectified current
(AT TA=25oC unless otherwise noted)
CONDITIONS
Ambient temperature = 50oC
Forward surge current
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
Reverse current
Thermal resistance
Diode junction capacitance
Storage temperature
VR = VRRM TA = 25oC
VR = VRRM TA = 100oC
Junction to ambient
f=1MHz and applied 4vDC reverse voltage
Symbol
IO
IFSM
IR
RqJA
CJ
TSTG
MIN.
-55
TYP.
32
20
MAX.
1.0
UNIT
A
30 A
5.0
150
+150
uA
uA
oC / w
pF
oC
SYMBOLS
HFM101
HFM102
HFM103
HFM104
HFM105
HFM106
HFM107
MARKING
CODE
H11
H12
H13
H14
H15
H16
H17
VRRM *1
(V)
50
100
200
300
400
600
800
VRMS *2
(V)
35
70
140
210
280
420
560
VR *3
(V)
50
100
200
300
400
600
800
VF *4
(V)
TRR *5
(nS)
1.0
50
1.3
1.7 75
Operating
temperature
(oC)
-55 to +150
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage
*5 Reverse recovery time
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RATING AND CHARACTERISTIC CURVES (HFM101 THRU HFM107)
FIG.1-TYPICAL FORWARD
CHARACTERISTICS
10
1.0
.1
.01
Tj=25 C
Pulse Width 300us
1% Duty Cycle
.001
.4
.6 .8 1.0 1.2 1.4 1.6 1.8
FORWARD VOLTAGE,(V)
FIG.3- TEST CIRCUIT DIAGRAM AND REVERSE
RECOVERY TIME CHARACTERISTICS
50W
NONINDUCTIVE
10W
NONINDUCTIVE
(+)
25Vdc
(approx.)
()
D.U.T.
1W
NON-
INDUCTIVE
OSCILLISCOPE
(NOTE 1)
()
PULSE
GENERATOR
(NOTE 2)
(+)
NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF.
2. Rise Time= 10ns max., Source Impedance= 50 ohms.
+0.5A
0
-0.25A
trr
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-1.0A
1cm
SET TIME BASE FOR
50 / 10ns / cm
FIG.2-TYPICAL FORWARD CURRENT
DERATING CURVE
1.2
1.0
0.8
0.6 Single Phase
Half Wave 60Hz
Resistive Or Inductive Load
0.4
0.2
0
0 25 50 75 100 125 150 175
AMBIENT TEMPERATURE ( C)
FIG.4-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
30
24
18
Tj=25 C
8.3ms Single Half
12 Sine Wave
JEDEC method
6
0
1
5 10
50 100
NUMBER OF CYCLES AT 60Hz
FIG.5-TYPICAL JUNCTION CAPACITANCE
175
120
100
80
60
40
20
0
.01
.05 .1
.5 1
5
REVERSE VOLTAGE,(V)
10
50 100
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