HFM106 PDF даташит
Спецификация HFM106 изготовлена «Rectron Semiconductor» и имеет функцию, называемую «SURFACE MOUNT GLASS PASSIVATED HIGH EFFICIENCY SILICON RECTIFIER (VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere)». |
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Детали детали
Номер произв | HFM106 |
Описание | SURFACE MOUNT GLASS PASSIVATED HIGH EFFICIENCY SILICON RECTIFIER (VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere) |
Производители | Rectron Semiconductor |
логотип |
2 Pages
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RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
SURFACE MOUNT GLASS PASSIVATED
HIGH EFFICIENCY SILICON RECTIFIER
VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere
HFM101
THRU
HFM108
FEATURES
* Glass passivated device
* Ideal for surface mounted applications
* Low leakage current
* Metallurgically bonded construction
* Mounting position: Any
* Weight: 0.057 gram
MECHANICAL DATA
* Epoxy : Device has UL flammability classification 94V-0
DO-214AC
0.067 (1.70)
0.051 (1.29)
0.180(4.57)
0.160(4.06)
0.110 (2.79)
0.086 (2.18)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
0.091 (2.31)
0.067 (1.70)
0.059 (1.50)
0.035 (0.89)
0.012 (0.305)
0.006 (0.152)
0.008 (0.203)
0.004 (0.102)
0.209 (5.31)
0.185 (4.70)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (At TA = 25oC unless otherwise noted)
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Volts
Maximum DC Blocking Voltage
Maximum Average Forward Current
at TA = 50oC
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Junction Capacitance (Note 2)
Pulse energy, non repetitive(inductive load switch off )
Operating and Storage Temperature Range
SYMBOL
VRRM
VRMS
VDC
IO
HFM101 HFM102 HFM103 HFM104 HFM105 HFM106 HFM107 HFM108
50 100 200 300 400 600 800 1000
35 70 140 210 280 420 560 700
50 100 200 300 400 600 800 1000
UNITS
Volts
Volts
Volts
1.0 Amps
IFSM
CJ
ER
TJ, TSTG
30
15
20
-65 to + 150
12
Amps
pF
mJ
0C
ELECTRICAL CHARACTERISTICS (At TA = 25oC unless otherwise noted)
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Full Load Reverse Current, Full cycle Average TA = 55oC
Maximum DC Reverse Current at
@TA = 25oC
Rated DC Blocking Voltage
@TA = 125oC
Maximum Reverse Recovery Time (Note 1)
NOTES : 1. Test Conditions: IF=0.5A, IR=-1.0A, IRR=-0.25A.
2. Measured at 1 MHZ and applied reverse voltage of 4.0 volts.
SYMBOL
VF
IR
trr
HFM101 HFM102 HFM103 HFM104 HFM105 HFM106 HFM107 HFM108 UNITS
1.0 1.3 1.7 Volts
50 uAmps
5.0 uAmps
100 uAmps
50 75 nSec
2002-2
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RATING AND CHARACTERISTIC CURVES ( HFM101 THRU HFM108 )
FIG. 1 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
50
NONINDUCTIVE
10
NONINDUCTIVE
+0.5A
trr
FIG. 2 - TYPICAL FORWARD
CURRENT DERATING CURVE
2.0
(+)
25 Vdc
(approx)
(-)
D.U.T
1
NON-
INDUCTIVE
OSCILLOSCOPE
(NOTE 1)
(-)
PULSE
GENERATOR
(NOTE 2)
(+)
0
-0.25A
-1.0A
NOTES:1 Rise Time = 7ns max. Input Impedance =
1 megohm. 22pF.
2. Rise Time = 10ns max. Souce Impedance =
50 ohms.
FIG. 3 - TYPICAL REVERSE CHARACTERISTICS
100
Single Phase
Half Wave 60Hz
Resistive or
1.0 Inductive Load
1cm
SET TIME BASE FOR
10/20 ns/cm
0
0 25 50 75 100 125 150175
AMBIENT TEMPERATURE ( )
FIG. 4 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
10
10 TJ = 150
TJ = 100
1.0
1.0
.1
TJ = 25
.1
.01
0 20 40 60 80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
TJ = 25
.01
Pulse Width = 300uS
1% Duty Cycle
.001
0 .2 .4 .6 .8 1.0 1.2 1.4 1.6 1.8
INSTANTANEOUS FORWARD VOLTAGE, (V)
FIG. 5 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
70
60
8.3ms Single Half Sine-Wave
(JEDEC Method)
50
40
30
20
10
0
12
5 10 20
50 100
NUMBER OF CYCLES AT 60Hz
FIG. 6 - TYPICAL JUNCTION CAPACITANCE
200
100
60
40
20 HFM101~HFM105
10
6
4
TJ = 25
HFM106~HFM108
2
1
.1 .2 .4 1.0 2 4 10 20 40 100
REVERSE VOLTAGE, ( V )
RECTRON
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