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HFM303 PDF даташит

Спецификация HFM303 изготовлена ​​​​«Formosa MS» и имеет функцию, называемую «Ultra fast recovery type».

Детали детали

Номер произв HFM303
Описание Ultra fast recovery type
Производители Formosa MS
логотип Formosa MS логотип 

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HFM303 Даташит, Описание, Даташиты
Chip Silicon Rectifier
HFM301 THRU HFM307
Formosa MS
Ultra fast recovery type
Features
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O Utilizing Flame
Retardant Epoxy Molding Compound.
For surface mounted applications.
Exceeds environmental standards of MIL-S-19500 /
228
Low leakage current.
Mechanical data
Case : Molded plastic, JEDECDO-214AB
Terminals : Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity : Indicated by c athode band
Mounting Position : Any
Weight : 0.00585 ounce, 0.195 gram
0.152(3.8)
0.144(3.6)
0.032(0.8) Typ.
0.040(1.0) Typ.
SMC
0.276(7.0)
0.260(6.6)
0.244(6.2)
0.228(5.8)
0.012(0.3) Typ.
0.189(4.8)
0.173(4.4)
0.087(2.2)
0.071(1.8)
0.040 (1.0) Typ.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS
PARAMETER
Forward rectified current
(AT TA=25oC unless otherwise noted)
CONDITIONS
Ambient temperature = 55oC
Forward surge current
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
Reverse current
Thermal resistance
Diode junction capacitance
Storage temperature
VR = VRRM TA = 25oC
VR = VRRM TA = 100oC
Junction to ambient
f=1MHz and applied 4vDC reverse voltage
Symbol
IO
IFSM
IR
RqJA
CJ
TSTG
MIN.
-55
TYP.
15
70
MAX.
3.0
UNIT
A
100 A
10.0
300
+150
uA
uA
oC / w
pF
oC
SYMBOLS
HFM301
HFM302
HFM303
HFM304
HFM305
HFM306
HFM307
MARKING
CODE
H31
H32
H33
H34
H35
H36
H37
V RRM *1 V RMS *2
(V) (V)
50 35
100 70
200 140
300 210
400 280
600 420
800 560
V R *3
(V)
50
100
200
300
400
600
800
V F *4
(V)
T RR *5
(nS)
Operating
temperature
( o C)
1.0
50
-55 to +150
1.3
1.7 70
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage
*5 Reverse recovery time









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HFM303 Даташит, Описание, Даташиты
RATING AND CHARACTERISTIC CURVES (HFM301 THRU HFM307)
FIG.1-TYPICAL FORWARD
CHARACTERISTICS
10
1.0
.1
.01
Tj=25 C
Pulse Width 300us
1% Duty Cycle
.001
.4
.6 .8 1.0 1.2 1.4 1.6 1.8
FORWARD VOLTAGE,(V)
FIG.3- TEST CIRCUIT DIAGRAM AND REVERSE
RECOVERY TIME CHARACTERISTICS
50W
NONINDUCTIVE
10W
NONINDUCTIVE
(+)
25Vdc
(approx.)
()
D.U.T.
1W
NON-
INDUCTIVE
OSCILLISCOPE
(NOTE 1)
()
PULSE
GENERATOR
(NOTE 2)
(+)
NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF.
2. Rise Time= 10ns max., Source Impedance= 50 ohms.
+0.5A
0
-0.25A
trr
|
|
|
|
|
|
|
|
-1.0A
1cm
SET TIME BASE FOR
50 / 10ns / cm
FIG.2-TYPICAL FORWARD CURRENT DERATING CURVE
3.6
3.0
2.4
1.8
1.2
0.6
0
0
Single Phase
Half Wave 60Hz
Resistive Or Inductive Load
20 40
60 80 100 120 140 160 180 200
AMBIENT TEMPERATURE ( C)
FIG.4-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
100
80
60
Tj=25 C
8.3ms Single Half
40 Sine Wave
JEDEC method
20
0
1
5 10
50 100
NUMBER OF CYCLES AT 60Hz
FIG.5-TYPICAL JUNCTION CAPACITANCE
175
150
125
100
75
50
25
0
.01
.05 .1
.5 1
5
REVERSE VOLTAGE,(V)
10
50 100










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