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What is HGT1S11N120CNS?

This electronic component, produced by the manufacturer "Fairchild Semiconductor", performs the same function as "43A/ 1200V/ NPT Series N-Channel IGBT".


HGT1S11N120CNS Datasheet PDF - Fairchild Semiconductor

Part Number HGT1S11N120CNS
Description 43A/ 1200V/ NPT Series N-Channel IGBT
Manufacturers Fairchild Semiconductor　
Logo Fairchild Semiconductor Logo　


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Data Sheet
HGTG11N120CN, HGTP11N120CN,
HGT1S11N120CNS
December 2001
43A, 1200V, NPT Series N-Channel IGBT
The HGTG11N120CN, HGTP11N120CN, and
HGT1S11N120CNS are Non-Punch Through (NPT) IGBT
designs. They are new members of the MOS gated high
voltage switching IGBT family. IGBTs combine the best
features of MOSFETs and bipolar transistors. This device
has the high input impedance of a MOSFET and the low on-
state conduction loss of a bipolar transistor.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly Developmental Type TA49291.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTG11N120CN
TO-247
G11N120CN
HGTP11N120CN
TO-220AB
11N120CN
HGT1S11N120CNS TO-263AB
11N120CN
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB variant in Tape and Reel, i.e.,
HGT1S11N120CNS9A.
Symbol
C
Features
• 43A, 1200V, TC = 25oC
• 1200V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 340ns at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss
• Avalanche Rated
• Thermal Impedance SPICE Model
Temperature Compensating SABER™ Model
www.fairchildsemi.com
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Packaging
JEDEC STYLE TO-247
COLLECTOR
(BOTTOM SIDE
METAL)
E
C
G
JEDEC TO-220AB (ALTERNATE VERSION)
G
E
COLLECTOR
(FLANGE)
E
C
G
JEDEC TO-263AB
COLLECTOR
G (FLANGE)
E
FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
©2001 Fairchild Semiconductor Corporation
HGTG11N120CN, HGTP11N120CN, HGT1S11N120CNS Rev. B

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HGT1S11N120CNS equivalent
HGTG11N120CN, HGTP11N120CN, HGT1S11N120CNS
Typical Performance Curves Unless Otherwise Specified (Continued)
40
RG = 10Ω, L = 2mH, VCE = 960V
50
RG = 10Ω, L = 2mH, VCE = 960V
35 TJ = 25oC, TJ = 150oC, VGE = 12V
40 TJ = 25oC, TJ = 150oC, VGE = 12V
30 30
25 20
20
15
0
TJ = 25oC, TJ = 150oC, VGE = 15V
5 10 15 20
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
10
TJ = 25oC OR TJ = 150oC, VGE = 15V
0
0 5 10 15 20
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
500
450
400
350
300
250
200
150
100
0
RG = 10Ω, L = 2mH, VCE = 960V
VGE = 12V, VGE = 15V, TJ = 150oC
VGE = 12V, VGE = 15V, TJ = 25oC
5 10 15
ICE, COLLECTOR TO EMITTER CURRENT (A)
20
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
100
DUTY CYCLE < 0.5%, VCE = 20V
250µs PULSE TEST
80
60
TC = 25oC
40
20
TC = 150oC
TC = -55oC
0
7 8 9 10 11 12 13 14
VGE, GATE TO EMITTER VOLTAGE (V)
FIGURE 13. TRANSFER CHARACTERISTIC
15
700
RG = 10Ω, L = 2mH, VCE = 960V
600
500
TJ = 150oC, VGE = 12V OR 15V
400
300
200
100
0
TJ = 25oC, VGE = 12V OR 15V
5 10 15
ICE, COLLECTOR TO EMITTER CURRENT (A)
20
FIGURE 12. FALL vs COLLECTOR TO EMITTER CURRENT
20
IG(REF) = 1mA, RL = 54.5Ω, TC = 25oC
15
VCE = 1200V VCE = 800V
10
VCE = 400V
5
0
0 20 40 60 80 100
QG, GATE CHARGE (nC)
FIGURE 14. GATE CHARGE WAVEFORMS
120
©2001 Fairchild Semiconductor Corporation
HGTG11N120CN, HGTP11N120CN, HGT1S11N120CNS Rev. B


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