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PDF HGT1S12N60A4S Data sheet ( Hoja de datos )
| Número de pieza | HGT1S12N60A4S | |
| Descripción | 600V/ SMPS Series N-Channel IGBT | |
| Fabricantes | Intersil Corporation | |
| Logotipo |  |
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Data Sheet
HGTP12N60A4, HGTG12N60A4,
HGT1S12N60A4S
May 1999 File Number 4656.2
600V, SMPS Series N-Channel IGBT
The HGTP12N60A4, HGTG12N60A4 and
HGT1S12N60A4S are MOS gated high voltage switching
devices combining the best features of MOSFETs and
bipolar transistors. These devices have the high input
impedance of a MOSFET and the low on-state conduction
loss of a bipolar transistor. The much lower on-state voltage
drop varies only moderately between 25oC and 150oC.
This IGBT is ideal for many high voltage switching
applications operating at high frequencies where low
conduction losses are essential. This device has been
optimized for high frequency switch mode power supplies.
Formerly Developmental Type TA49335.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTP12N60A4
TO-220AB
12N60A4
HGTG12N60A4
TO-247
12N60A4
HGT1S12N60A4S
TO-263AB
12N60A4
NOTE: When ordering, use the entire part number. Add the suffix
9A to obtain the TO-263AB variant in tape and reel, e.g.
HGT1S12N60A4S9A
Symbol
C
G
E
Features
• >100kHz Operation at 390V, 12A
• 200kHz Operation at 390V, 9A
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . . 70ns at TJ = 125oC
• Low Conduction Loss
• Temperature Compensating SABER Model
http://www.intersil.com
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards
Packaging
JEDEC TO-220AB ALTERNATE VERSION
COLLECTOR
(FLANGE)
EC
G
JEDEC TO-263AB
G
E
COLLECTOR
(FLANGE)
JEDEC STYLE TO-247
E
C
G
COLLECTOR
(FLANGE)
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,587,713
4,641,162
4,794,432
4,860,080
4,969,027
4,417,385
4,598,461
4,644,637
4,801,986
4,883,767
4,430,792
4,605,948
4,682,195
4,803,533
4,888,627
4,443,931
4,618,872
4,684,413
4,809,045
4,890,143
4,466,176
4,620,211
4,694,313
4,809,047
4,901,127
4,516,143
4,631,564
4,717,679
4,810,665
4,904,609
4,532,534
4,639,754
4,743,952
4,823,176
4,933,740
4,567,641
4,639,762
4,783,690
4,837,606
4,963,951
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
1 page  
HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S
Typical Performance Curves Unless Otherwise Specified (Continued)
115
RG = 10Ω, L = 500µH, VCE = 390V
110
VGE = 12V, VGE = 15V, TJ = 125oC
105
100
95
VGE = 12V, VGE = 15V, TJ = 25oC
90
85
2 4 6 8 10 12 14 16 18 20 22 24
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
90
RG = 10Ω, L = 500µH, VCE = 390V
80
70 TJ = 125oC, VGE = 12V OR 15V
60
50
40
30
TJ = 25oC, VGE = 12V OR 15V
20
10
2 4 6 8 10 12 14 16 18 20 22 24
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
250
DUTY CYCLE < 0.5%, VCE = 10V
PULSE DURATION = 250µs
200
TJ = 25oC
150 TJ = -55oC
TJ = 125oC
100
50
0
6 7 8 9 10 11 12 13 14 15 16
VGE, GATE TO EMITTER VOLTAGE (V)
FIGURE 13. TRANSFER CHARACTERISTIC
16
IG(REF) = 1mA, RL = 25Ω, TC = 25oC
14
12
VCE = 600V
10
VCE = 400V
8
6 VCE = 200V
4
2
0
0 10 20 30 40 50 60
QG, GATE CHARGE (nC)
70
FIGURE 14. GATE CHARGE WAVEFORMS
80
1.2
RG = 10Ω, L = 500µH, VCE = 390V, VGE = 15V
ETOTAL = EON2 + EOFF
1.0
0.8
ICE = 24A
0.6
0.4
0.2
0
25
ICE = 12A
ICE = 6A
50 75 100 125
TC, CASE TEMPERATURE (oC)
FIGURE 15. TOTAL SWITCHING LOSS vs CASE
TEMPERATURE
150
10 TJ = 125oC, L = 500µH, VCE = 390V, VGE = 15V
ETOTAL = EON2 + EOFF
ICE = 24A
1
ICE = 12A
ICE = 6A
0.1
5
10
100
RG, GATE RESISTANCE (Ω)
1000
FIGURE 16. TOTAL SWITCHING LOSS vs GATE RESISTANCE
5
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