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HGT1S12N60C3S PDF даташит

Спецификация HGT1S12N60C3S изготовлена ​​​​«Fairchild Semiconductor» и имеет функцию, называемую «24A/ 600V/ UFS Series N-Channel IGBTs».

Детали детали

Номер произв HGT1S12N60C3S
Описание 24A/ 600V/ UFS Series N-Channel IGBTs
Производители Fairchild Semiconductor
логотип Fairchild Semiconductor логотип 

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HGT1S12N60C3S Даташит, Описание, Даташиты
HGTP12N60C3, HGT1S12N60C3,
SEMICONDUCTOR
HGT1S12N60C3S
January 1997
24A, 600V, UFS Series N-Channel IGBTs
Features
• 24A, 600V at TC = 25oC
• 600V Switching SOA Capability
• Typical Fall Time . . . . . . . . . . . . . . 230ns at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTP12N60C3
TO-220AB
P12N60C3
HGT1S12N60C3 TO-262AA
S12N60C3
HGT1S12N60C3S TO-263AB
S12N60C3
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB variant in Tape and Reel, i.e.,
HGT1S12N60C3S9A.
Description
The HGTP12N60C3, HGT1S12N60C3 and HGT1S12N60C3S
are MOS gated high voltage switching devices combining the
best features of MOSFETs and bipolar transistors. These
devices have the high input impedance of a MOSFET and the
low on-state conduction loss of a bipolar transistor. The much
lower on-state voltage drop varies only moderately between
25oC and 150oC.
The IGBT is ideal for many high voltage switching applications
operating at moderate frequencies where low conduction losses
are essential, such as: AC and DC motor controls, power sup-
plies and drivers for solenoids, relays and contactors.
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
C
Formerly Developmental Type TA49123.
G
Packaging
COLLECTOR
(FLANGE)
JEDEC TO-220AB
EMITTER
COLLECTOR
GATE
E
JEDEC TO-262AA
COLLECTOR
(FLANGE)
EMITTER
COLLECTOR
GATE
JEDEC TO-263AB
GATE
EMITTER
MA
COLLECTOR
(FLANGE)
HARRIS SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,567,641
4,587,713
4,598,461
4,605,948
4,618,872
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright © Harris Corporation 1997
3-29
File Number 4040.3









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HGT1S12N60C3S Даташит, Описание, Даташиты
HGTP12N60C3, HGT1S12N60C3, HGT1S12N60C3S
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES
Collector Current Continuous
At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ICM
Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
Gate-Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM
Switching Safe Operating Area at TJ = 150oC, Figure 14 . . . . . . . . . . . . . . . . . . . .SSOA
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Reverse Voltage Avalanche Energy. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EARV
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL
Short Circuit Withstand Time (Note 2) at VGE = 15V . . . . . . . . . . . . . . . . . . . . . . . . . . tSC
Short Circuit Withstand Time (Note 2) at VGE = 10V . . . . . . . . . . . . . . . . . . . . . . . . . . tSC
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. VCE(PK) = 360V, TJ = 125oC, RGE = 25Ω.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
HGTP12N60C3, HGT1S12N60C3,
HGT1S12N60C3S
600
24
12
96
±20
±30
24A at 600V
104
0.83
100
-40 to 150
260
4
13
UNITS
V
A
A
A
V
V
W
W/oC
mJ
oC
oC
µs
µs
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Collector-Emitter Breakdown Voltage
Emitter-Collector Breakdown Voltage
Collector-Emitter Leakage Current
Collector-Emitter Saturation Voltage
Gate-Emitter Threshold Voltage
Gate-Emitter Leakage Current
Switching SOA
BVCES
BVECS
ICES
VCE(SAT)
VGE(TH)
IGES
SSOA
IC = 250µA, VGE = 0V
IC = 10mA, VGE = 0V
VCE = BVCES
TC = 25oC
VCE = BVCES
TC = 150oC
IC = IC110,
VGE = 15V
TC = 25oC
TC = 150oC
IC = 250µA,
VCE = VGE
TC = 25oC
VGE = ±20V
TJ = 150oC
RG = 25
VGE = 15V
L = 100µH
VCE(PK) = 480V
VCE(PK) = 600V
600
24
-
-
-
-
3.0
-
80
24
--
30 -
- 250
- 1.0
1.65 2.0
1.85 2.2
5.0 6.0
- ±100
--
--
V
V
µA
mA
V
V
V
nA
A
A
Gate-Emitter Plateau Voltage
VGEP
IC = IC110, VCE = 0.5 BVCES
- 7.6 -
V
On-State Gate Charge
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
QG(ON)
tD(ON)I
tRI
tD(OFF)I
tFI
IC = IC110,
VGE = 15V
VCE = 0.5 BVCES VGE = 20V
TJ = 150oC,
ICE = IC110,
VCE(PK) = 0.8 BVCES,
VGE = 15V,
RG = 25Ω,
L = 100µH
- 48 55 nC
- 62 71 nC
- 14 - ns
- 16 - ns
-
270 400
ns
-
210 275
ns
Turn-On Energy
EON
- 380 -
µJ
Turn-Off Energy (Note 3)
Thermal Resistance
EOFF
RθJC
- 900 -
µJ
- - 1.2 oC/W
NOTE:
3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and
ending at the point where the collector current equals zero (ICE = 0A). The HGTP12N60C3, HGT1S12N60C3 and HGT1S12N60C3S were
tested per JEDEC standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the
true total Turn-Off Energy Loss. Turn-On losses include diode losses.
3-30









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HGT1S12N60C3S Даташит, Описание, Даташиты
HGTP12N60C3, HGT1S12N60C3, HGT1S12N60C3S
Typical Performance Curves
80
DUTY CYCLE <0.5%, VCE = 10V
70 PULSE DURATION = 250µs
60
50
TC = 150oC
40
30 TC = 25oC
TC = -40oC
20
10
0
46
8 10 12
VGE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 1. TRANSFER CHARACTERISTICS
14
PULSE DURATION = 250µs, DUTY CYCLE <0.5%, TC = 25oC
80
70
VGE = 15.0V
12.0V
60
50 10.0V
40
30 9.0V
20 8.5V
8.0V
10
7.5V
0 7.0V
0 2 4 6 8 10
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 2. SATURATION CHARACTERISTICS
80
PULSE DURATION = 250µs
70 DUTY CYCLE <0.5%, VGE = 10V
60
50
40
TC = -40oC
30
TC = 150oC
20
TC = 25oC
10
0
0 1 2 3 45
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 3. COLLECTOR-EMITTER ON-STATE VOLTAGE
80
PULSE DURATION = 250µs
70 DUTY CYCLE <0.5%, VGE = 15V
TC = -40oC
60
50
TC = 25oC
40
TC = 150oC
30
20
10
0
01 2 34 5
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 4. COLLECTOR-EMITTER ON-STATE VOLTAGE
25
VGE = 15V
20
15
10
5
0
25 50 75 100 125 150
TC, CASE TEMPERATURE (oC)
FIGURE 5. DC COLLECTOR CURRENT AS A FUNCTION OF
CASE TEMPERATURE
20
VCE = 360V, RGE = 25, TJ = 125oC
ISC
15
140
120
100
80
10 60
40
tSC
5 20
10 11 12 13 14 15
VGE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 6. SHORT CIRCUIT WITHSTAND TIME
3-31










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