C5899 PDF даташит
Спецификация C5899 изготовлена «Sanyo Semicon Device» и имеет функцию, называемую «NPN Transistor - 2SC5899». |
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Детали детали
Номер произв | C5899 |
Описание | NPN Transistor - 2SC5899 |
Производители | Sanyo Semicon Device |
логотип |
4 Pages
No Preview Available ! |
Ordering number : ENN7538
2SC5899
NPN Triple Diffused PlanwarwSwili.cDona tTaraSnhseisetot 4r U . c o m
2SC5899
Ultrahigh-Definition CRT Display
Horizontal Deflection Output Applications
Features
• High speed.
• High breakdown voltage(VCBO=1700V).
• High reliability(Adoption of HVP process).
• Adoption of MBIT process.
Package Dimensions
unit : mm
2174A
[2SC5899]
16.0 3.4
5.6
3.1
2.8
2.0 2.1
0.7 0.9
Specifications
Absolute Maximum Ratings at Ta=25°C
12 3
5.45
5.45
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PMLH
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Symbol
VCBO
VCEO
VEBO
IC
ICP
Collector Dissipation
PC
Junction Temperature
Storage Temperature
Tj
Tstg
Electrical Characteristics at Ta=25°C
Tc=25°C
Conditions
Ratings
1700
800
5
15
35
3.0
95
150
--55 to +150
Unit
V
V
V
A
A
W
W
°C
°C
Parameter
Collector Cutoff Current
Collector-to-Emitter Breakdown Voltage
Emitter Cutoff Current
Symbol
Conditions
ICBO
ICES
V(BR)CEO
IEBO
VCB=800V, IE=0
VCE=1700V, RBE=0
IC=10mA, RBE=∞
VEB=4V, IC=0
min
800
Ratings
typ
max
Unit
10 µA
1.0 mA
V
1.0 mA
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
31504 TS IM TA-100536 No.7538-1/4
Free Datasheet http:
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2SC5899
Continued from preceding page.
Parameter
DC Current Gain
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Storage Time
Fall Time
Symbol
hFE1
hFE2
VCE(sat)
VBE(sat)
tstg
tf
Conditions
VCE=5V, IC=1A
VCE=5V, IC=11A
IC=10A, IB=2.5A
IC=10A, IB=2.5A
IC=7A, IB1=0.9A, IB2=--3.6A
IC=7A, IB1=0.9A, IB2=--3.6A
Switching Time Test Circuit
PW=20µs
D.C.≤1%
INPUT
VR
IB1
IB2
RB
50Ω
+
100µF
VBE= --5V
OUTPUT
RL=28.6Ω
+
470µF
VCC=200V
www.DataSheet4U.com
min
15
4
Ratings
typ
max
7
3
1.5
3.0
0.2
Unit
V
V
µs
µs
IC -- VCE
12
11 2.0A 1.8A 1.6A 1.4A
10
9 1.2A
1.0A
8 0.8A
7 0.6A
6
0.4A
5
4 0.2A
3 0.1A
2
1
0
0
100
7
IB=0
1 2 3 4 5 6 7 8 9 10
Collector-to-Emitter Voltage, VCE -- V IT06263
hFE -- IC
VCE=5V
5 Ta=120°C
3
2 25°C
10 --40°C
7
5
3
2
1.0
0.1
2 3 5 7 1.0
2 3 5 7 10
23
Collector Current, IC -- A
IT06265
16
VCE=5V
14
IC -- VBE
12
10
8
6
4
2
0
0 0.2 0.4 0.6 0.8 1.0 1.2
Base-to-Emitter Voltage, VBE -- V
VCE(sat) -- IC
10
7 IC / IB=5
5
IT06264
3
2
1.0
7
5
3
2
0.1 Ta= --40°C
7
5 120°C
3 25°C
2
0.01
0.1
2 3 5 7 1.0
2 3 5 7 10
23
Collector Current, IC -- A
IT06266
No.7538-2/4
Free Datasheet http://www.datasheet4u.net/
No Preview Available ! |
2SC5899
10 SW Time -- IC
7
5
VCC=200V
IC / IB=8
IB2 / IB1=4
3 tstg R load
10 SW Time w--wIwB.2DataSheet4U.com
7
5
VCC=200V
tstg
IC=7A
IB1=0.9A
R load
3
22
1.0
7
5
tf
3
2
0.1
0.1
23
100
7
5
ICP=35A
3
2 IC=15A
10
7
5
3
2
5 7 1.0
2 3 5 7 10
Collector Current, IC -- A
Forward Bias A S O
23
IT06267
PC =95W
300µs
1.0
7
5
3
2
0.1
7
5
3
2
Tc=25°C
0.01 Single pulse
1.0 2 3 5 7 10
2 3 5 7 100 2 3
Collector-to-Emitter Voltage, VCE -- V
PC -- Ta
3.5
5 7 1000
IT06269
3.0
2.5
2.0 No heat sink
1.5
1.0
0.5
0
0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT06271
1.0 tf
7
5
3
2
0.1
0.1
100
7
5
3
2
10
7
5
3
2
1.0
7
5
3
2
0.1
100
100
95
90
80
70
60
50
40
30
20
10
0
0
23
5 7 1.0
23
Base Current, IB2 -- A
Reverse Bias A S O
5 7 10
IT06268
L=500µH
IB2= --3A
Tc=25°C
Single pulse
23
5 7 1000
23
Collector-to-Emitter Voltage, VCE -- V IT06270
PC -- Tc
20 40 60 80 100 120 140 160
Case Temperature, Tc -- °C
IT06272
No.7538-3/4
Free Datasheet http://www.datasheet4u.net/
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C5899 | NPN Transistor - 2SC5899 | Sanyo Semicon Device |
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