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PDF HGT1S1N120CNDS Data sheet ( Hoja de datos )
| Número de pieza | HGT1S1N120CNDS | |
| Descripción | 6.2A/ 1200V/ NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode | |
| Fabricantes | Intersil Corporation | |
| Logotipo |  |
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HGTP1N120CND, HGT1S1N120CNDS
Data Sheet
January 2000 File Number 4651.1
6.2A, 1200V, NPT Series N-Channel IGBT
with Anti-Parallel Hyperfast Diode
The HGTP1N120CND and the HGT1S1N120CNDS are
Non-Punch Through (NPT) IGBT designs. They are new
members of the MOS gated high voltage switching IGBT
family. IGBTs combine the best features of MOSFETs and
bipolar transistors. This device has the high input impedance
of a MOSFET and the low on-state conduction loss of a
bipolar transistor.
The IGBT is development type number TA49317. The diode
used in anti-parallel with the IGBT is the RHRD4120
(TA49056).
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly developmental type TA49315.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTP1N120CND
TO-220AB
1N120CND
HGT1S1N120CNDS TO-263AB
1N120CND
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB in tape and reel, e.g.
HGT1S1N120CNDS9A.
Symbol
C
Features
• 6.2A, 1200V, TC = 25oC
• 1200V Switching SOA Capability
• Typical EOFF. . . . . . . . . . . . . . . . . . . 200µJ at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss
• Temperature Compensating SABER™ Model
Thermal Impedance SPICE Model www.intersil.com/
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Packaging
JEDEC TO-220AB
E
C
G
COLLECTOR
(FLANGE)
JEDEC TO-263AB
G
E
COLLECTOR
(FLANGE)
G
E
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,598,461
4,682,195
4,417,385
4,605,948
4,684,413
4,430,792
4,620,211
4,694,313
4,443,931
4,631,564
4,717,679
4,466,176
4,639,754
4,743,952
4,516,143
4,639,762
4,783,690
4,532,534
4,641,162
4,794,432
4,587,713
4,644,637
4,801,986
4,803,533
4,888,627
4,809,045
4,890,143
4,809,047
4,901,127
4,810,665
4,904,609
4,823,176
4,933,740
4,837,606
4,963,951
4,860,080
4,969,027
4,883,767
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000
SABER™ is a trademark of Analogy, Inc.
1 page  
HGTP1N120CND, HGT1S1N120CNDS
Typical Performance Curves Unless Otherwise Specified (Continued)
84
80
76
72
68
64
60
56
0.5
RG = 82Ω, L = 4mH, VCE = 960V
TJ = 150oC, VGE = 15V
TJ = 150oC, VGE = 13V
TJ = 25oC, VGE = 15V
TJ = 25oC, VGE = 13V
1 1.5 2 2.5
ICE, COLLECTOR TO EMITTER CURRENT (A)
3
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
560
520
480
440
400
360
320
280
240
0.5
RG = 82Ω, L = 4mH, VCE = 960V
TJ = 150oC, VGE = 13V OR 15V
TJ = 25oC, VGE = 13V OR 15V
1 1.5 2 2.5
ICE, COLLECTOR TO EMITTER CURRENT (A)
3
FIGURE 12. TURN-OFF FALL TIME vs COLLECTOR TO
EMITTER CURRENT
16
DUTY CYCLE < 0.5%, VCE = 10V
14 PULSE DURATION = 250µs
12 TC = -55oC
10
8
6
4
2 TC = 150oC
TC = 25oC
0
6 9 12 15
VGE, GATE TO EMITTER VOLTAGE (V)
FIGURE 13. TRANSFER CHARACTERISTIC
350
300
CIES
250
FREQUENCY = 1MHz
200
150
100
COES
50
CRES
0
0
5
10 15 20
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
25
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
15
VCE = 800V
12
VCE = 400V
9
VCE = 1200V
6
3
IG(REF) = 1mA, RL = 600Ω, TC = 25oC
0
0 4 8 12 16 20
QG, GATE CHARGE (nC)
FIGURE 14. GATE CHARGE WAVEFORMS
12
PULSE DURATION = 250µs
10 DUTY CYCLE < 0.5%, TC = 110oC
VGE = 15V
8
6
VGE = 14V
4
VGE = 13V
2
0
0 2 4 6 8 10
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 16. COLLECTOR TO EMITTER ON-STATE VOLTAGE
5
5 Page | ||
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| PDF Descargar | [ Datasheet HGT1S1N120CNDS.PDF ] | |
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