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HGT1S20N35G3VL PDF даташит

Спецификация HGT1S20N35G3VL изготовлена ​​​​«Fairchild Semiconductor» и имеет функцию, называемую «20A/ 350V N-Channel/ Logic Level/ Voltage Clamping IGBTs».

Детали детали

Номер произв HGT1S20N35G3VL
Описание 20A/ 350V N-Channel/ Logic Level/ Voltage Clamping IGBTs
Производители Fairchild Semiconductor
логотип Fairchild Semiconductor логотип 

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HGT1S20N35G3VL Даташит, Описание, Даташиты
December 2001
HGTP20N35G3VL,
HGT1S20N35G3VL,
HGT1S20N35G3VLS
20A, 350V N-Channel,
Logic Level, Voltage Clamping IGBTs
Features
• Logic Level Gate Drive
• Internal Voltage Clamp
• ESD Gate Protection
• TJ = 175oC
• Ignition Energy Capable
Packages
COLLECTOR
(FLANGE)
JEDEC TO-220AB
EMITTER
COLLECTOR
GATE
Description
This N-Channel IGBT is a MOS gated, logic level device
which is intended to be used as an ignition coil driver in auto-
motive ignition circuits. Unique features include an active
voltage clamp between the collector and the gate which pro-
vides Self Clamped Inductive Switching (SCIS) capability in
ignition circuits. Internal diodes provide ESD protection for
the logic level gate. Both a series resistor and a shunt resis-
tor are provided in the gate circuit.
PACKAGING AVAILABILITY
PART NUMBER
PACKAGE
BRAND
HGTP20N35G3VL
T0-220AB
20N35GVL
HGT1S20N35G3VL
T0-262AA
20N35GVL
HGT1S20N35G3VLS
T0-263AB
20N35GVL
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB variant in the tape and reel, i.e.,
HGT1S20N35G3VLS9A.
The development type number for this device is TA49076.
COLLECTOR
(FLANGE)
JEDEC TO-262AA
EMITTER
COLLECTOR
GATE
JEDEC TO-263AB
GATE
EMITTER
COLLECTOR
(FLANGE)
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
COLLECTOR
GATE
R1
R2
EMITTER
Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified
Collector-Emitter Bkdn Voltage At 10mA, RGE = 1k. . . . . . . . . . . . . . . . . . . . . . . BVCER
Emitter-Collector Bkdn Voltage At 10mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVECS
Collector Current Continuous At VGE = 5.0V, TC = +25oC, Figure 7 . . . . . . . . . . . . . IC25
At VGE = 5.0V, TC = +100oC . . . . . . . . . . . . . . . . . . . . IC100
Gate-Emitter-Voltage (Note) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
Inductive Switching Current At L = 2.3mH, TC = +25o C . . . . . . . . . . . . . . . . . . . . . . ISCIS
At L = 2.3mH, T
C = +175oC . . . . . . . . . . . . . . . . . . . . . . ISCIS
Collector to Emitter Avalanche Energy At L = 2.3mH, TC = +25oC . . . . . . . . . . . . . . EAS
Power Dissipation Total At TC = +25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating TC > +25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Electrostatic Voltage at 100pF, 1500. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ESD
NOTE: May be exceeded if IGEM is limited to 10mA.
HGTP20N35G3VL
HGT1S20N35G3VL
HGT1S20N35G3VLS
375
24
20
20
±10
26
18
775
150
1.0
-40 to +175
260
6
UNITS
V
V
A
A
V
A
A
mJ
W
W/oC
oC
oC
KV
©2001 Fairchild Semiconductor Corporation
HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS Rev. B









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HGT1S20N35G3VL Даташит, Описание, Даташиты
Specifications HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS
Electrical Specifications TC = +25oC, Unless Otherwise Specified
PARAMETERS
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage
Gate-Emitter Plateau Voltage
Gate Charge
Collector-Emitter Clamp Bkdn. Voltage
Emitter-Collector Breakdown Voltage
Collector-Emitter Leakage Current
Collector-Emitter Saturation Voltage
Gate-Emitter Threshold Voltage
Gate Series Resistance
Gate-Emitter Resistance
Gate-Emitter Leakage Current
Gate-Emitter Breakdown Voltage
Current Turn-Off Time-Inductive Load
Inductive Use Test
Thermal Resistance
SYMBOL
TEST CONDITIONS
BVCES
IC = 10mA,
VGE = 0V
BVCER
IC = 10mA
VGE = 0V
RGE = 1k
VGEP
QG(ON)
BVCE(CL)
BVECS
ICES
VCE(SAT)
IC = 10A
VCE = 12V
IC = 10A
VGE = 5V
VCE = 12V
IC = 10A
RG = 0
IC = 10mA
VCE = 250V
VCE = 250V
IC = 10A
VGE = 4.5V
IC = 20A
VGE = 5.0V
VGE(TH)
R1
R2
IC = 1mA
VCE = VGE
TC = +175oC
TC = +25oC
TC = -40oC
TC = +175oC
TC = +25oC
TC = -40oC
TC = +25oC
TC = +25oC
TC = +175oC
TC = +25oC
TC = +25oC
TC = +175oC
TC = +25oC
TC = +175oC
TC = +25oC
TC = +175oC
TC = +25oC
TC = +25oC
TC = +25oC
IGES
VGE = ±10V
BVGES
IGES = ±2mA
tD(OFF)I +
tF(OFF)I
ISCIS
IC = 10A, RG = 25,
L = 550µH, RL = 26.4, VGE = 5V,
VCL = 300V, TC = +175oC
L = 2.3mH,
VG = 5V,
RG = 0
TC = +175oC
TC = +25oC
RθJC
LIMITS
MIN TYP MAX UNITS
310 345 380
V
320 350 380
V
320 355 390
V
300 340 375
V
315 345 375
V
315 350 390
V
- 3.7
-V
- 28.7 - nC
325 360 395
V
20 32
-
- -5
- - 250
- 1.3 1.6
- 1.25 1.5
- 1.6 2.8
- 1.9 3.5
1.3 1.8 2.3
V
µA
µA
V
V
V
V
V
-
10
±400
±12
-
1.0
17
±590
±14
15
-
25
±1000
-
30
k
k
µA
V
µs
18 -
-A
26 -
-A
- - 1.0 oC/W
©2001 Fairchild Semiconductor Corporation
HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS Rev. B









No Preview Available !

HGT1S20N35G3VL Даташит, Описание, Даташиты
HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS
Typical Performance Curves
PULSE DURATION = 250µs, DUTY CYCLE <0.5%, VCE = 10V
50
40
30
TC = +175oC
20 TC = +25oC
TC = -40oC
10
0
1 234 5
VGE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 1. TRANSFER CHARACTERISTICS
6
PULSE DURATION = 250µs, DUTY CYCLE <0.5%, TC = +25oC
100
VGE=10V
7V
6.5V
6.0V
80
5.5V
5.0V
60
4.5V
40 4.0V
3.5V
20
3.0V
2.5V
0
0 24 68
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
10
FIGURE 2. SATURATION CHARACTERISTICS
TC = +175oC
40
30 VGE = 4.5V
20
10
VGE = 5.0V
VGE = 4.0V
50
VGE = 4.5V
40
30
20
10
-40oC
+25oC
+175oC
0
01 2 3
VCE(SAT) , SATURATION VOLTAGE (V)
4
0
01 23 4
VCE(SAT) , SATURATION VOLTAGE (V)
5
FIGURE 3. COLLECTOR-EMITTER CURRENT AS A FUNCTION FIGURE 4. COLLECTOR-EMITTER CURRENT AS A FUNCTION
OF SATURATION VOLTAGE
OF SATURATION VOLTAGE
©2001 Fairchild Semiconductor Corporation
HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS Rev. B










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