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PDF HGT1S2N120BNDS Data sheet ( Hoja de datos )
| Número de pieza | HGT1S2N120BNDS | |
| Descripción | 12A/ 1200V/ NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode | |
| Fabricantes | Intersil Corporation | |
| Logotipo |  |
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HGTP2N120BND, HGT1S2N120BNDS
Data Sheet
January 2000 File Number 4698.2
12A, 1200V, NPT Series N-Channel IGBT
with Anti-Parallel Hyperfast Diode
The HGTP2N120BND and HGT1S2N120BNDS are
Non-Punch Through (NPT) IGBT designs. They are new
members of the MOS gated high voltage switching IGBT
family. IGBTs combine the best features of MOSFETs and
bipolar transistors. This device has the high input impedance
of a MOSFET and the low on-state conduction loss of a
bipolar transistor. The IGBT used is the development type
TA49312. The Diode used is the development type TA49056.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly Developmental Type TA49310.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTP2N120BND
TO-220AB
2N120BND
HGT1S2N120BNDS TO-263AB
2N120BND
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB variant in Tape and Reel, i.e.,
HGT1S2N120BNDS9A.
Symbol
C
G
E
Features
• 12A, 1200V, TC = 25oC
• 1200V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 160ns at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss
• Thermal Impedance SPICE Model
www.intersil.com
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Packaging
JEDEC TO-220AB (ALTERNATE VERSION)
COLLECTOR
(FLANGE)
EC
G
JEDEC TO-263AB
G
E
COLLECTOR
(FLANGE)
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000
1 page  
HGTP2N120BND, HGT1S2N120BNDS
Typical Performance Curves Unless Otherwise Specified (Continued)
45
RG = 51Ω, L = 5mH, VCE = 960V
40 TJ = 25oC, TJ = 150oC, VGE = 12V
35
30
25
20
15 0
TJ = 25oC, TJ = 150oC, VGE = 15V
12345
ICE, COLLECTOR TO EMITTER CURRENT (A)
40
RG = 51Ω, L = 5mH, VCE = 960V
35
30 TJ = 25oC, TJ = 150oC, VGE = 12V
25
20
15
10
5 TJ = 25oC OR TJ = 150oC, VGE = 15V
0
01 2 3 4 5
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
450
RG = 51Ω, L = 5mH, VCE = 960V
400
350
300 VGE = 12V, VGE = 15V, TJ = 150oC
250
200
150
100
0
VGE = 12V, VGE = 15V, TJ = 25oC
1234
ICE, COLLECTOR TO EMITTER CURRENT (A)
5
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
30
DUTY CYCLE < 0.5%, VCE = 20V
PULSE DURATION = 250µs
25
20
15
10 TC = 25oC
5 TC = 150oC
TC = -55oC
0
7 8 9 10 11 12 13 14
VGE, GATE TO EMITTER VOLTAGE (V)
FIGURE 13. TRANSFER CHARACTERISTIC
15
400
RG = 51Ω, L = 5mH, VCE = 960V
350
300
250
TJ = 150oC, VGE = 12V OR 15V
200
150
100
50
0
TJ = 25oC, VGE = 12V OR 15V
1234
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
5
20
IG (REF) = 1mA, RL = 260Ω, TC = 25oC
15
VCE = 1200V
10
VCE = 400V
VCE = 800V
5
0
0 5 10 15 20 25 30
QG, GATE CHARGE (nC)
FIGURE 14. GATE CHARGE WAVEFORMS
35
5
5 Page | ||
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