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HGT1S2N120BNS PDF даташит

Спецификация HGT1S2N120BNS изготовлена ​​​​«Intersil Corporation» и имеет функцию, называемую «12A/ 1200V/ NPT Series N-Channel IGBT».

Детали детали

Номер произв HGT1S2N120BNS
Описание 12A/ 1200V/ NPT Series N-Channel IGBT
Производители Intersil Corporation
логотип Intersil Corporation логотип 

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HGT1S2N120BNS Даташит, Описание, Даташиты
Data Sheet
HGTP2N120BN, HGTD2N120BNS,
HGT1S2N120BNS
January 2000 File Number 4696.2
12A, 1200V, NPT Series N-Channel IGBT
The HGTP2N120BN, HGTD2N120BNS, and
HGT1S2N120BNS are Non-Punch Through (NPT) IGBT
designs. They are new members of the MOS gated high
voltage switching IGBT family. IGBTs combine the best
features of MOSFETs and bipolar transistors. This device
has the high input impedance of a MOSFET and the low
on-state conduction loss of a bipolar transistor.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly Developmental Type TA49312.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTP2N120BN
TO-220AB
2N120BN
HGTD2N120BNS
TO-252AA
2N120BN
HGT1S2N120BNS
TO-263AB
2N120BN
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB and TO-252AA variant in Tape and Reel,
e.g., HGT1S2N120BNS9A.
Symbol
C
G
E
Features
• 12A, 1200V, TC = 25oC
• 1200V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 160ns at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss
• Avalanche Rated
Thermal Impedance SPICE Model
Temperature Compensating SABER™ Model
www.intersil.com
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Packaging
JEDEC TO-220AB
COLLECTOR
(FLANGE)
EC
G
JEDEC TO-252AA
G
E
COLLECTOR
(FLANGE)
JEDEC TO-263AB
G
E
COLLECTOR
(FLANGE)
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,598,461
4,682,195
4,803,533
4,888,627
4,417,385
4,605,948
4,684,413
4,809,045
4,890,143
4,430,792
4,620,211
4,694,313
4,809,047
4,901,127
4,443,931
4,631,564
4,717,679
4,810,665
4,904,609
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
4,587,713
4,644,637
4,801,986
4,883,767
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000
SABER™ is a trademark of Analogy, Inc.









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HGT1S2N120BNS Даташит, Описание, Даташиты
HGTP2N120BN, HGTD2N120BNS, HGT1S120BNS
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES
Collector Current Continuous
At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM
Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Forward Voltage Avalanche Energy (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAV
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, see Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg
Short Circuit Withstand Time (Note 3) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC
Short Circuit Withstand Time (Note 3) at VGE = 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC
HGTP2N120BN,
HGTD2N120BNS
HGT1S2N120BNS
1200
12
5.6
20
±20
±30
12A at 1200V
104
0.83
18
-55 to 150
300
260
8
15
UNITS
V
A
A
A
V
V
W
W/oC
mJ
oC
oC
oC
µs
µs
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Pulse width limited by maximum junction temperature.
2. ICE = 3A, L = 4mH, TJ = 25oC.
3. VCE(PK) = 840V, TJ = 125oC, RG = 51.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to Emitter Breakdown Voltage
BVCES
IC = 250µA, VGE = 0V
Emitter to Collector Breakdown Voltage
Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
BVECS
ICES
VCE(SAT)
VGE(TH)
IGES
SSOA
IC = 10mA, VGE = 0V
VCE = BVCES
TC = 25oC
TC = 125oC
TC = 150oC
IC = 2.3A,
VGE = 15V
TC = 25oC
TC = 150oC
IC = 20µA, VCE = VGE
VGE = ±20V
TJ = 150oC, RG = 51Ω, VGE = 15V,
L = 400µH, VCE(PK) = 1200V
Gate to Emitter Plateau Voltage
VGEP
IC = 2.3A, VCE = 0.5 BVCES
On-State Gate Charge
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 4)
Turn-On Energy (Note 4)
QG(ON)
td(ON)I
trI
td(OFF)I
tfI
EON1
EON2
IC = 2.3A,
VCE = 0.5 BVCES
VGE = 15V
VGE = 20V
IGBT and Diode at TJ = 25oC
ICE = 2.3A
VCE = 0.8 BVCES
VGE = 15V
RG = 51
L = 5mH
Test Circuit (Figure 18)
Turn-Off Energy (Note 5)
EOFF
MIN TYP MAX UNITS
1200
-
-
V
15 - - V
- - 250 µA
- 40 - µA
- - 0.5 mA
- 2.45 2.7
V
- 3.6 4.2
V
6.0 6.8
-
V
-
-
±250
nA
12 - - A
- 10.2 -
V
- 24 30 nC
- 32 39 nC
- 21 25 ns
- 11 15 ns
- 185 240 ns
- 100 130 ns
- 83
-
µJ
- 370 500 µJ
- 195 270 µJ
2









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HGT1S2N120BNS Даташит, Описание, Даташиты
HGTP2N120BN, HGTD2N120BNS, HGT1S120BNS
Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued)
PARAMETER
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 4)
Turn-On Energy (Note 4)
Turn-Off Energy (Note 5)
Thermal Resistance Junction To Case
NOTES:
SYMBOL
td(ON)I
trI
td(OFF)I
tfI
EON1
EON2
EOFF
RθJC
TEST CONDITIONS
IGBT and Diode at TJ = 150oC
ICE = 2.3A
VCE = 0.8 BVCES
VGE = 15V
RG = 51
L = 5mH
Test Circuit (Figure 18)
MIN TYP MAX UNITS
- 25 30 ns
- 11 15 ns
- 195 260 ns
- 160 200 ns
- 83
-
µJ
-
725 1000
µJ
- 280 380 µJ
- - 1.2 oC/W
4. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2 is the
turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in Figure 18.
5. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
Typical Performance Curves Unless Otherwise Specified
12
VGE = 15V
10
8
6
4
2
0
25 50 75 100 125
TC, CASE TEMPERATURE (oC)
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
150
14
TJ = 150oC, RG = 51, VGE = 15V, L = 1mH
12
10
8
6
4
2
0
0 200 400 600 800 1000 1200 1400
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
TJ = 150oC, RG = 51, L = 5mH, VCE = 960V
TC = 75oC, VGE = 15V, IDEAL DIODE
100
TC VGE
75oC 15V
50 75oC 12V
fMAX1 = 0.05 / (td(OFF)I + td(ON)I)
fMAX2 = (PD - PC) / (EON2 + EOFF)
PC = CONDUCTION DISSIPATION TC VGE
(DUTY FACTOR = 50%)
10 RØJC = 1.2oC/W, SEE NOTES
111100ooCC
15V
12V
0.5 1.0
2.0
ICE, COLLECTOR TO EMITTER CURRENT (A)
5.0
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
25 40
VCE = 840V, RG = 51, TJ = 125oC
20 35
tSC ISC
15 30
10 25
5 20
12 13 14 15
VGE, GATE TO EMITTER VOLTAGE (V)
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
3










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Номер в каталогеОписаниеПроизводители
HGT1S2N120BNDS12A/ 1200V/ NPT Series N-Channel IGBT with Anti-Parallel Hyperfast DiodeIntersil Corporation
Intersil Corporation
HGT1S2N120BNS12A/ 1200V/ NPT Series N-Channel IGBTIntersil Corporation
Intersil Corporation

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