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PDF HGT1S5N120BNS Data sheet ( Hoja de datos )
| Número de pieza | HGT1S5N120BNS | |
| Descripción | 21A/ 1200V/ NPT Series N-Channel IGBTs | |
| Fabricantes | Intersil Corporation | |
| Logotipo |  |
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Data Sheet
HGTP5N120BN, HGT1S5N120BNS
January 2000 File Number 4599.2
21A, 1200V, NPT Series N-Channel IGBTs
The HGTP5N120BN and the HGT1S5N120BNS are
Non-Punch Through (NPT) IGBT designs. They are new
members of the MOS gated high voltage switching IGBT
family. IGBTs combine the best features of MOSFETs and
bipolar transistors. This device has the high input impedance
of a MOSFET and the low on-state conduction loss of a
bipolar transistor.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly Developmental Type TA49308.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTP5N120BN
TO-220AB
5N120BN
HGT1S5N120BNS
TO-263AB
5N120BN
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB variant in Tape and Reel, i.e.,
HGT1S5N120BNS9A.
Symbol
C
G
E
Features
• 21A, 1200V, TC = 25oC
• 1200V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 175ns at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss
• Avalanche Rated
• Thermal Impedance SPICE Model
Temperature Compensating SABER™ Model
www.intersil.com
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Packaging
JEDEC TO-220AB (ALTERNATE VERSION)
COLLECTOR
(FLANGE)
E
C
G
JEDEC TO-263AB
COLLECTOR
(FLANGE)
G
E
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,598,461
4,682,195
4,803,533
4,888,627
4,417,385
4,605,948
4,684,413
4,809,045
4,890,143
4,430,792
4,620,211
4,694,313
4,809,047
4,901,127
4,443,931
4,631,564
4,717,679
4,810,665
4,904,609
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
4,587,713
4,644,637
4,801,986
4,883,767
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
SABER™ is a trademark of Analogy, Inc.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000
1 page  
HGTP5N120BN, HGT1S5N120BNS
Typical Performance Curves Unless Otherwise Specified (Continued)
40
RG = 25Ω, L = 5mH, VCE = 960V
35
30
TJ = 25oC, TJ = 150oC, VGE = 12V
25
20
15
2
TJ = 25oC, TJ = 150oC, VGE = 15V
3456789
ICE, COLLECTOR TO EMITTER CURRENT (A)
10
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
40
RG = 25Ω, L = 5mH, VCE = 960V
35
30 TJ = 25oC, TJ = 150oC, VGE = 12V
25
20
15
10
0
2
TJ = 25oC, TJ = 150oC, VGE = 15V
3456789
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
10
250
RG = 25Ω, L = 5mH, VCE = 960V
225
VGE = 12V, VGE = 15V, TJ = 150oC
200
175
150
125
VGE = 12V, VGE = 15V, TJ = 25oC
100
2
3456789
ICE, COLLECTOR TO EMITTER CURRENT (A)
10
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
250
RG = 25Ω, L = 5mH, VCE = 960V
200
TJ = 150oC, VGE = 12V OR 15V
150
100
TJ = 25oC, VGE = 12V OR 15V
50
23456789
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12. TURN-OFF FALL TIME vs COLLECTOR TO
EMITTER CURRENT
10
80
DUTY CYCLE <0.5%, VCE = 20V
70 PULSE DURATION = 250µs
60
50
40 TC = 25oC
30
20
10
TC = 150oC
TC = -55oC
0
7 8 9 10 11 12 13 14
VGE, GATE TO EMITTER VOLTAGE (V)
FIGURE 13. TRANSFER CHARACTERISTICS
15
5
16
IG(REF) = 1mA, RL = 120Ω, TC = 25oC
14 VCE = 1200V
12
10
8
VCE = 800V
VCE = 400V
6
4
2
0
0 10 20 30 40
QG, GATE CHARGE (nC)
50
FIGURE 14. GATE CHARGE WAVEFORMS
60
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