DataSheet39.com

What is HGT1S7N60A4DS?

This electronic component, produced by the manufacturer "Fairchild Semiconductor", performs the same function as "600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode".


HGT1S7N60A4DS Datasheet PDF - Fairchild Semiconductor

Part Number HGT1S7N60A4DS
Description 600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
Manufacturers Fairchild Semiconductor　
Logo Fairchild Semiconductor Logo　


There is a preview and HGT1S7N60A4DS download ( pdf file ) link at the bottom of this page.





Total 9 Pages



Preview 1 page

No Preview Available ! HGT1S7N60A4DS datasheet, circuit

Data Sheet
HGTG7N60A4D, HGTP7N60A4D,
HGT1S7N60A4DS
December 2001
600V, SMPS Series N-Channel IGBT with
Anti-Parallel Hyperfast Diode
The HGTG7N60A4D, HGTP7N60A4D and
HGT1S7N60A4DS are MOS gated high voltage switching
devices combining the best features of MOSFETs and
bipolar transistors. These devices have the high input
impedance of a MOSFET and the low on-state conduction
loss of a bipolar transistor. The much lower on-state voltage
drop varies only moderately between 25oC and 150oC. The
IGBT used is the development type TA49331. The diode
used in anti-parallel is the development type TA49370.
This IGBT is ideal for many high voltage switching
applications operating at high frequencies where low
conduction losses are essential. This device has been
optimized for high frequency switch mode power
supplies.
Formerly Developmental Type TA49333.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTG7N60A4D
HGTP7N60A4D
TO-247
TO-220AB
7N60A4D
7N60A4D
HGT1S7N60A4DS
TO-263AB
7N60A4D
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB variant in tape and reel, e.g.,
HGT1S7N60A4DS9A.
Symbol
C
Features
• >100kHz Operation At 390V, 7A
• 200kHz Operation At 390V, 5A
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . . 75ns at TJ = 125oC
• Low Conduction Loss
• Temperature Compensating SABER™ Model
www.fairchildsemi.com
Packaging
JEDEC STYLE TO-247
E
C
G
COLLECTOR
(FLANGE)
JEDEC TO-220AB
E
CG
COLLECTOR
(FLANGE)
G
E
JEDEC TO-263AB
COLLECTOR
G (FLANGE)
E
FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
©2001 Fairchild Semiconductor Corporation
HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS Rev. B

line_dark_gray
HGT1S7N60A4DS equivalent
HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS
Typical Performance Curves Unless Otherwise Specified (Continued)
180
RG = 25Ω, L = 1mH, VCE = 390V
160
140 VGE = 15V, TJ = 125oC
120
100
80
60
0
VGE = 12V, TJ = 125oC
VGE = 15V, TJ = 25oC
VGE = 12V, TJ = 25oC
2 4 6 8 10 12
ICE, COLLECTOR TO EMITTER CURRENT (A)
14
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
90
RG = 25Ω, L = 1mH, VCE = 390V
80
70
TJ = 125oC, VGE = 12V OR 15V
60
50
40 TJ = 25oC, VGE = 12V OR 15V
30
20
0 2 4 6 8 10 12
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
14
120
DUTY CYCLE < 0.5%, VCE = 10V
PULSE DURATION = 250µs
100
80
TJ = 25oC
60
TJ = 125oC
TJ = -55oC
40
20
0
7 8 9 10 11 12 13 14
VGE, GATE TO EMITTER VOLTAGE (V)
FIGURE 13. TRANSFER CHARACTERISTIC
15
800
RG = 25Ω, L = 1mH, VCE = 390V, VGE = 15V
ETOTAL = EON2 + EOFF
600
ICE = 14A
400
ICE = 7A
200
ICE = 3.5A
0
25 50 75 100 125
TC, CASE TEMPERATURE (oC)
FIGURE 15. TOTAL SWITCHING LOSS vs CASE
TEMPERATURE
150
©2001 Fairchild Semiconductor Corporation
15
IG(REF) = 1mA, RL = 43Ω, TJ = 25oC
12 VCE = 600V
VCE = 400V
9
6 VCE = 200V
3
0
0 5 10 15 20 25 30 35
QG, GATE CHARGE (nC)
FIGURE 14. GATE CHARGE WAVEFORMS
40
10 TJ = 125oC, L = 1mH, VCE = 390V, VGE = 15V
ETOTAL = EON2 + EOFF
1 ICE = 14A
ICE = 7A
ICE = 3.5A
0.1
10
100
RG, GATE RESISTANCE (Ω)
1000
FIGURE 16. TOTAL SWITCHING LOSS vs GATE RESISTANCE
HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS Rev. B


line_dark_gray

Preview 5 Page


Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for HGT1S7N60A4DS electronic component.


Information Total 9 Pages
Link URL [ Copy URL to Clipboard ]
Download [ HGT1S7N60A4DS.PDF Datasheet ]

Share Link :

Electronic Components Distributor


An electronic components distributor is a company that sources, stocks, and sells electronic components to manufacturers, engineers, and hobbyists.


SparkFun Electronics Allied Electronics DigiKey Electronics Arrow Electronics
Mouser Electronics Adafruit Newark Chip One Stop


Featured Datasheets

Part NumberDescriptionMFRS
HGT1S7N60A4DSThe function is 600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode. Fairchild SemiconductorFairchild Semiconductor
HGT1S7N60A4DSThe function is 600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode. Intersil CorporationIntersil Corporation

Semiconductors commonly used in industry:

1N4148   |   BAW56   |   1N5400   |   NE555   |  

LM324   |   BC327   |   IRF840  |   2N3904   |  



Quick jump to:

HGT1     1N4     2N2     2SA     2SC     74H     BC     HCF     IRF     KA    

LA     LM     MC     NE     ST     STK     TDA     TL     UA    



Privacy Policy   |    Contact Us     |    New    |    Search