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PDF HGT1S7N60B3DS Data sheet ( Hoja de datos )
| Número de pieza | HGT1S7N60B3DS | |
| Descripción | 14A/ 600V/ UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode | |
| Fabricantes | Fairchild Semiconductor | |
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Data Sheet
HGTP7N60B3D, HGT1S7N60B3DS
December 2001
14A, 600V, UFS Series N-Channel IGBTs
with Anti-Parallel Hyperfast Diode
The HGTP7N60B3D and HGT1S7N60B3DS are MOS gated
high voltage switching devices combining the best features
of MOSFETs and bipolar transistors. These devices have the
high input impedance of a MOSFET and the low on-state
conduction loss of a bipolar transistor. The much lower
on-state voltage drop varies only moderately between 25oC
and 150oC at rated current. The IGBT is developmental type
TA49190. The diode used in anti-parallel with the IGBT is the
RHRD660 (TA49057).
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly Developmental Type TA49191.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTP7N60B3D
HGT1S7N60B3DS
TO-220AB ALT
TO-263AB
G7N60B3D
G7N60B3D
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB variant in tape and reel, i.e.,
HGT1S7N60B3DS9A.
Symbol
C
Features
• 14A, 600V, TC = 25oC
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 120ns at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss
• Hyperfast Anti-Parallel Diode
Packaging
JEDEC TO-220AB (ALTERNATE VERSION)
COLLECTOR
(FLANGE)
E
C
G
JEDEC TO-263AB
G
COLLECTOR
(FLANGE)
E
G
E
FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
©2001 Fairchild Semiconductor Corporation
HGTP7N60B3D, HGT1S7N60B3DS Rev. B
1 page  
HGTP7N60B3D, HGT1S7N60B3DS
Typical Performance Curves Unless Otherwise Specified (Continued)
60
RG = 50Ω, L = 2mH, VCE = 480V
50
TJ = 150oC, VGE = 10V
40 TJ = 25oC, VGE = 10V
30 TJ = 25oC, VGE = 15V
20 TJ = 150oC, VGE = 15V
10 1
3 5 7 9 11 13
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
15
140
RG = 50Ω, L = 2mH, VCE = 480V
120
100
80 TJ = 150oC, VGE = 10V
60 TJ = 25oC, VGE = 10V
40
20 TJ = 25oC and 150oC, VGE = 15V
0
1 3 5 7 9 11 13 15
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
250 RG = 50Ω, L = 2mH, VCE = 480V
200
TJ = 150oC, VGE = 15V
150
TJ = 150oC, VGE = 10V
100
50
1
TJ = 25oC, VGE = 10V
TJ = 25oC, VGE = 15V
3 5 7 9 11 13
ICE, COLLECTOR TO EMITTER CURRENT (A)
15
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
120
RG = 50Ω, L = 2mH, VCE = 480V
100
TJ = 150oC, VGE = 10V and 15V
80
60
TJ = 25oC, VGE = 10V and 15V
40 1 3 5 7 9 11 13 15
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
40 DUTY CYCLE = < 0.5%
PULSE DURATION = 250µs
32 VCE = 10V
24
TC = 25oC
16
TC = 150oC
8
TC = -55oC
0 6 8 10 12
VGE, GATE TO EMITTER VOLTAGE (V)
FIGURE 13. TRANSFER CHARACTERISTIC
14
15 Ig(REF) = 0.758mA, RL = 86Ω, TC = 25oC
12
VCE = 200V
VCE = 600V
9
6 VCE = 400V
3
0
0 4 8 12 16 20 24
QG, GATE CHARGE (nC)
FIGURE 14. GATE CHARGE WAVEFORMS
28
©2001 Fairchild Semiconductor Corporation
HGTP7N60B3D, HGT1S7N60B3DS Rev. B
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet HGT1S7N60B3DS.PDF ] | |
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