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PDF HGT4E20N60A4DS Data sheet ( Hoja de datos )
| Número de pieza | HGT4E20N60A4DS | |
| Descripción | 600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode | |
| Fabricantes | Fairchild Semiconductor | |
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HGTG20N60A4D, HGT4E20N60A4DS
Data Sheet
APRIL 2002
600V, SMPS Series N-Channel IGBT with
Anti-Parallel Hyperfast Diode
This family of MOS gated high voltage switching devices
combine the best features of MOSFETs and bipolar
transistors. These devices have the high input impedance of
a MOSFET and the low on-state conduction loss of a bipolar
transistor. The much lower on-state voltage drop varies only
moderately between 25oC and 150oC. The IGBT used is the
development type TA49339. The diode used in anti-parallel
is the development type TA49372.
These IGBT’s are ideal for many high voltage switching
applications operating at high frequencies where low
conduction losses are essential. These devices have been
optimized for high frequency switch mode power
supplies.
Formerly Developmental Type TA49341.
Ordering Information
PART NUMBER
HGTG20N60A4D
HGT4E20N60A4DS
PACKAGE
TO-247
TO-268
BRAND
20N60A4D
20N60A4DS
NOTE: When ordering, use the entire part number.
Symbol
C
G
E
Features
• >100kHz Operation At 390V, 20A
• 200kHz Operation At 390V, 12A
• 600V Switching SOA Capability
• Typical Fall Time . . . . . . . . . . . . . . . . .55ns at TJ = 125oC
• Low Conduction Loss
• Temperature Compensating SABER™ Model
www.fairchildsemi.com
Packaging
JEDEC STYLE TO-247
E
C
G
TO-268AA
G
E
C
FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,803,533
4,684,413
4,809,045
4,694,313
4,809,047
4,717,679
4,810,665
4,743,952
4,823,176
4,783,690
4,837,606
4,794,432
4,860,080
4,801,986
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
©2002 Fairchild Semiconductor Corporation
HGTG20N60A4D, HGT4E20N60A4DS Rev. C
1 page  
HGTG20N60A4D, HGT4E20N60A4DS
Typical Performance Curves Unless Otherwise Specified (Continued)
120
RG = 3Ω, L = 500µH, VCE = 390V
110
VGE = 12V, VGE = 15V, TJ = 125oC
100
90
80
VGE = 12V, VGE = 15V, TJ = 25oC
70
60
5 10 15 20 25 30 35 40
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
80
RG = 3Ω, L = 500µH, VCE = 390V
72
64 TJ = 125oC, VGE = 12V OR 15V
56
48
40 TJ = 25oC, VGE = 12V OR 15V
32
24
16
5 10 15 20 25 30 35
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
40
240
DUTY CYCLE < 0.5%, VCE = 10V
PULSE DURATION = 250µs
200
160
120
TJ = 25oC
80 TJ = 125oC
40 TJ = -55oC
0
6 7 8 9 10 11
VGE, GATE TO EMITTER VOLTAGE (V)
FIGURE 13. TRANSFER CHARACTERISTIC
12
16
IGIG((RREEFF))==11mmAA,,RRLL==1155ΩΩ,,TTJJ==2255ooCC
14
12 VCE = 600V
10 VCE = 400V
8
6 VCE = 200V
4
2
0
0 20 40 60 80 100 120 140 160
QG, GATE CHARGE (nC)
FIGURE 14. GATE CHARGE WAVEFORMS
1.8
RG = 3Ω, L = 500µH, VCE = 390V, VGE = 15V
1.6 ETOTAL = EON2 + EOFF
1.4
1.2
ICE = 30A
1.0
0.8
0.6 ICE = 20A
0.4 ICE = 10A
0.2
0
25 50 75 100 125
TC, CASE TEMPERATURE (oC)
FIGURE 15. TOTAL SWITCHING LOSS vs CASE
TEMPERATURE
150
TJ = 125oC, L = 500µH, VCE = 390V, VGE = 15V
ETOTAL = EON2 + EOFF
10
ICE = 30A
1
ICE = 20A
ICE = 10A
0.1
3
10 100
RG, GATE RESISTANCE (Ω)
1000
FIGURE 16. TOTAL SWITCHING LOSS vs GATE RESISTANCE
©2002 Fairchild Semiconductor Corporation
HGTG20N60A4D, HGT4E20N60A4DS Rev. C
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet HGT4E20N60A4DS.PDF ] | |
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