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HGTD1N120BNS PDF даташит

Спецификация HGTD1N120BNS изготовлена ​​​​«Intersil Corporation» и имеет функцию, называемую «5.3A/ 1200V/ NPT Series N-Channel IGBT».

Детали детали

Номер произв HGTD1N120BNS
Описание 5.3A/ 1200V/ NPT Series N-Channel IGBT
Производители Intersil Corporation
логотип Intersil Corporation логотип 

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HGTD1N120BNS Даташит, Описание, Даташиты
Data Sheet
HGTD1N120BNS, HGTP1N120BN
January 2000 File Number 4649.2
5.3A, 1200V, NPT Series N-Channel IGBT
The HGTD1N120BNS and HGTP1N120BN are Non-Punch
Through (NPT) IGBT designs. They are new members of the
MOS gated high voltage switching IGBT family. IGBTs
combine the best features of MOSFETs and bipolar
transistors. This device has the high input impedance of a
MOSFET and the low on-state conduction loss of a bipolar
transistor.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly Developmental Type TA49316.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTD1N120BNS
TO-252AA
1N120B
HGTP1N120BN
TO-220AB
1N120BN
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-252AA in tape and reel, i.e. HGTD1N120BNS9A
Symbol
C
Features
• 5.3A, 1200V, TC = 25oC
• 1200V Switching SOA Capability
• Typical EOFF. . . . . . . . . . . . . . . . . . . 120µJ at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss
• Avalanche Rated
Temperature Compensating SABER™ Model
Thermal Impedance SPICE Model
www.intersil.com
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Packaging
JEDEC TO-220AB
E
C
G
COLLECTOR
(FLANGE)
G
E
JEDEC TO-252AA
G
E
COLLECTOR
(FLANGE)
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,598,461
4,682,195
4,803,533
4,888,627
4,417,385
4,605,948
4,684,413
4,809,045
4,890,143
4,430,792
4,620,211
4,694,313
4,809,047
4,901,127
4,443,931
4,631,564
4,717,679
4,810,665
4,904,609
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
4,587,713
4,644,637
4,801,986
4,883,767
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000
SABER™ is a trademark of Analogy, Inc.









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HGTD1N120BNS Даташит, Описание, Даташиты
HGTD1N120BNS, HGTP1N120BN
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES
Collector Current Continuous
At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM
Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Forward Voltage Avalanche Energy (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAV
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, see Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg
Short Circuit Withstand Time (Note 3) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC
Short Circuit Withstand Time (Note 3) at VGE = 13V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC
ALL TYPES
1200
5.3
2.7
6
±20
±30
6A at 1200V
60
0.476
10
-55 to 150
300
260
8
13
UNITS
V
A
A
A
V
V
W
W/oC
mJ
oC
oC
oC
µs
µs
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Single Pulse; VGE = 15V; Pulse width limited by maximum junction temperature.
2. ICE = 7A, L = 400µH, VGE = 15V, TJ = 25oC.
3. VCE(PK) = 840V, TJ = 125oC, RG = 82Ω.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to Emitter Breakdown Voltage
Emitter to Collector Breakdown Voltage
Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
Gate to Emitter Plateau Voltage
BVCES
BVECS
ICES
VCE(SAT)
VGE(TH)
IGES
SSOA
VGEP
IC = 250µA, VGE = 0V
IC = 10mA, VGE = 0V
VCE = BVCES
TC = 25oC
TC = 125oC
TC = 150oC
IC = 1.0A
VGE = 15V
TC = 25oC
TC = 150oC
IC = 50µA, VCE = VGE
VGE = ±20V
TJ = 150oC, RG = 82Ω, VGE = 15V,
L = 2mH, VCE(PK) = 1200V
IC = 1.0A, VCE = 0.5 BVCES
On-State Gate Charge
QG(ON)
IC = 1.0A
VCE = 0.5 BVCES
VGE = 15V
VGE = 20V
MIN
1200
15
-
-
-
-
-
6.0
-
6
TYP
-
-
-
20
-
2.5
3.8
7.1
-
-
MAX
-
-
250
-
1.0
2.9
4.3
-
±250
-
UNITS
V
V
µA
µA
mA
V
V
V
nA
A
- 9.2
-
V
- 14 20 nC
- 15 21 nC
2









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HGTD1N120BNS Даташит, Описание, Даташиты
HGTD1N120BNS, HGTP1N120BN
Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 5)
td(ON)I
trI
td(OFF)I
tfI
EON1
IGBT and Diode at TJ = 25oC
ICE = 1.0A
VCE = 0.8 BVCES
VGE = 15V
RG = 82
L = 4mH
Test Circuit (Figure 18)
- 15 20 ns
- 11 14 ns
- 67 76 ns
- 226 300 ns
- 70
-
J
Turn-On Energy (Note 5)
EON2
- 172 187
J
Turn-Off Energy (Note 4)
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 5)
EOFF
td(ON)I
trI
td(OFF)I
tfI
EON1
IGBT and Diode at TJ = 150oC
ICE = 1.0 A
VCE = 0.8 BVCES
VGE = 15V
RG = 82
L = 4mH
Test Circuit (Figure 18)
- 90 123
J
- 13 17 ns
- 11 15 ns
- 75 88 ns
- 258 370 ns
- 145
-
J
Turn-On Energy (Note 5)
EON2
- 385 440
J
Turn-Off Energy (Note 4)
Thermal Resistance Junction To Case
EOFF
RθJC
- 120 175
J
- - 2.1 oC/W
NOTES:
4. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
5. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2 is
the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in Figure 18.
Typical Performance Curves (Unless Otherwise Specified)
6
VGE = 15V
5
4
3
2
1
0
25 50 75 100 125 150
TC, CASE TEMPERATURE (oC)
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
7
TJ = 150oC, RG = 82, VGE = 15V, L = 2mH
6
5
4
3
2
1
0
0 200 400 600 800 1000 1200 1400
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
3










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Номер в каталогеОписаниеПроизводители
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