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HGTD3N60C3S PDF даташит

Спецификация HGTD3N60C3S изготовлена ​​​​«Fairchild Semiconductor» и имеет функцию, называемую «6A/ 600V/ UFS Series N-Channel IGBTs».

Детали детали

Номер произв HGTD3N60C3S
Описание 6A/ 600V/ UFS Series N-Channel IGBTs
Производители Fairchild Semiconductor
логотип Fairchild Semiconductor логотип 

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HGTD3N60C3S Даташит, Описание, Даташиты
SEMICONDUCTOR
HGTD3N60C3,
HGTD3N60C3S
June 1997
6A, 600V, UFS Series N-Channel IGBTs
Features
• 6A, 600V at TC = 25oC
• 600V Switching SOA Capability
• Typical Fall Time . . . . . . . . . . . . . . 130ns at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTD3N60C3
TO-251AA
G3N60C
HGTD3N60C3S
TO-252AA
G3N60C
Description
The HGTD3N60C3 and HGTD3N60C3S are MOS gated high
voltage switching devices combining the best features of
MOSFETs and bipolar transistors. These devices have the
high input impedance of a MOSFET and the low on-state con-
duction loss of a bipolar transistor. The much lower on-state
voltage drop varies only moderately between 25oC and
150oC.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly developmental type TA49113.
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-252AA variant in Tape and Reel, i.e.
HGTD3N60C3S9A.
Symbol
N-CHANNEL ENHANCEMENT MODE
C
Packaging
JEDEC TO-251AA
EMITTER COLLECTOR
GATE
COLLECTOR
(FLANGE)
G
E
JEDEC TO-252AA
GATE
EMITTER
COLLECTOR
(FLANGE)
HARRIS SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073
4,587,713
4,641,162
4,794,432
4,860,080
4,417,385
4,598,461
4,644,637
4,801,986
4,883,767
4,430,792
4,605,948
4,682,195
4,803,533
4,888,627
4,443,931
4,618,872
4,684,413
4,809,045
4,890,143
4,466,176
4,620,211
4,694,313
4,809,047
4,901,127
4,516,143
4,631,564
4,717,679
4,810,665
4,904,609
4,532,534
4,639,754
4,743,952
4,823,176
4,933,740
4,567,641
4,639,762
4,783,690
4,837,606
4,963,951
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD handling procedures.
Copyright © Harris Corporation 1997
1
File Number 4139.3









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HGTD3N60C3S Даташит, Описание, Даташиты
HGTD3N60C3, HGTD3N60C3S
Absolute Maximum Ratings TC = 25oC
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES
Collector Current Continuous
At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ICM
Gate to Emitter Voltage Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM
Switching Safe Operating Area at TJ = 150oC, Figure 14 . . . . . . . . . . . . . . . . . . . . . . . . SSOA
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Reverse Voltage Avalanche Energy. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EARV
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Short Circuit Withstand Time (Note 2) at VGE = 10V, Figure 6 . . . . . . . . . . . . . . . . . . . . . . tSC
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. VCE(PK) = 360V, TJ = 125oC, RGE = 82Ω.
HGTD3N60C3
HGTD3N60C3S
600
6
3
24
±20
±30
18A at 480V
33
0.27
100
-40 to 150
260
8
UNITS
V
A
A
A
V
V
W
W/oC
mJ
oC
oC
µs
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Collector to Emitter Breakdown Voltage
Emitter to Collector Breakdown Voltage
Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
BVCES
BVECS
ICES
VCE(SAT)
VGE(TH)
IGES
SSOA
IC = 250µA, VGE = 0V
IC = 3mA, VGE = 0V
VCE = BVCES
TC = 25oC
TC = 150oC
IC = IC110,
VGE = 15V
TC = 25oC
TC = 150oC
IC = 250µA,
VCE = VGE
TC = 25oC
VGE = ±25V
TJ = 150oC
RG = 82
VGE = 15V
L = 1mH
VCE(PK) = 480V
VCE(PK) = 600V
600
16
-
-
-
-
3.0
-
18
2
--
30 -
- 250
- 2.0
1.65 2.0
1.85 2.2
5.5 6.0
- ±250
--
--
V
V
µA
mA
V
V
V
nA
A
A
Gate to Emitter Plateau Voltage
VGEP
IC = IC110, VCE = 0.5 BVCES
- 8.3 -
V
On-State Gate Charge
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy
Qg(ON)
td(ON)I
trI
td(OFF)I
tfI
EON
IC = IC110,
VGE = 15V
VCE = 0.5 BVCES VGE = 20V
TJ = 150oC
ICE = IC110
VCE(PK) = 0.8 BVCES
VGE = 15V
RG = 82
L = 1mH
-
10.8 13.5
nC
-
13.8 17.3
nC
- 5 - ns
- 10 - ns
-
325 400
ns
-
130 275
ns
- 85 - µJ
Turn-Off Energy (Note 3)
Thermal Resistance
EOFF
RθJC
- 245 -
µJ
- - 3.75 oC/W
NOTE:
3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and
ending at the point where the collector current equals zero (ICE = 0A). The HGTD3N60C3 and HGTD3N60C3S were tested per JEDEC
standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off
Energy Loss. Turn-On losses include diode losses.
2









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HGTD3N60C3S Даташит, Описание, Даташиты
HGTD3N60C3, HGTD3N60C3S
Typical Performance Curves
20
DUTY CYCLE <0.5%, VCE = 10V
18 PULSE DURATION = 250µs
16
14
12
10
8 TC = 150oC
6
TC = 25oC
TC = -40oC
4
2
0
4 6 8 10 12
VGE, GATE TO EMITTER VOLTAGE (V)
FIGURE 1. TRANSFER CHARACTERISTICS
14
PULSE DURATION = 250µs, DUTY CYCLE <0.5%, TC = 25oC
20
VGE = 15V
12V
18
16
14
10V
12
10
8 9.0V
6 8.5V
4 8.0V
2 7.5V
7.0V
0
0 2 4 6 8 10
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 2. SATURATION CHARACTERISTICS
20
PULSE DURATION = 250µs
18 DUTY CYCLE <0.5%, VGE = 10V
16
14
12
10 TC = -40oC
8 TC = 150oC
6
TC = 25oC
4
2
0
0123 4
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
5
FIGURE 3. COLLECTOR TO EMITTER ON-STATE VOLTAGE
20 PULSE DURATION = 250µs
18 DUTY CYCLE <0.5%, VGE = 15V
16 TC = -40oC
14
TC = 25oC
12
10 TC = 150oC
8
6
4
2
0
01 2 345
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 4. COLLECTOR TO EMITTER ON-STATE VOLTAGE
7
VGE = 15V
6
5
4
3
2
1
0
25
50 75 100 125
TC, CASE TEMPERATURE (oC)
FIGURE 5. MAXIMUM DC COLLECTOR CURRENT AS A
FUNCTION OF CASE TEMPERATURE
150
14 VCE = 360V, RGE = 82, TJ = 125oC
12
70
60
10
tSC
8
6
50
40
ISC
30
4 20
2 10
0
10
11 12 13 14
VGE, GATE TO EMITTER VOLTAGE (V)
0
15
FIGURE 6. SHORT CIRCUIT WITHSTAND TIME
3










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