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PDF HGTD6N40E1 Data sheet ( Hoja de datos )
| Número de pieza | HGTD6N40E1 | |
| Descripción | 6A/ 400V and 500V N-Channel IGBTs | |
| Fabricantes | Intersil Corporation | |
| Logotipo |  |
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HGTD6N40E1, HGTD6N40E1S,
HGTD6N50E1, HGTD6N50E1S
March 1997
6A, 400V and 500V N-Channel IGBTs
Features
• 6A, 400V and 500V
• VCE(ON): 2.5V Max.
• TFALL: 1.0µs
• Low On-State Voltage
• Fast Switching Speeds
• High Input Impedance
Packages
HGTD6N40E1, HGTD6N50E1
JEDEC TO-251AA
EMITTER COLLECTOR
GATE
COLLECTOR
(FLANGE)
Applications
• Power Supplies
• Motor Drives
• Protective Circuits
Description
The HGTD6N40E1, HGTD6N40E1S, HGTD6N50E1, and
HGTD6N50E1S are n-channel enhancement-mode insulated
gate bipolar transistors (IGBTs) designed for high voltage, low
on-dissipation applications such as switching regulators and
motor drivers. These types can be operated directly from low
power integrated circuits.
HGTD6N40E1S, HGTD6N50E1S
JEDEC TO-252AA
GATE
EMITTER
COLLECTOR
(FLANGE)
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
C
PACKAGING AVAILABILITY
PART NUMBER
PACKAGE
BRAND
HGTD6N40E1
TO-251AA
G6N40E
HGTD6N50E1
TO-251AA
G6N50E
HGTD6N40E1S
TO-252AA
G6N40E
HGTD6N50E1S
TO-252AA
G6N50E
NOTE: When ordering, use the entire part number.
G
E
Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VCES
Collector-Gate Voltage RGE = 1MΩ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VCGR
Gate-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGE
Collector Current Continuous at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25
at TC = +90oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC90
Power Dissipation Total at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating TC > +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
HGTD6N40E1
HGTD6N40E1S
400
400
±20
7.5
6.0
60
0.48
-55 to +150
HGTD6N50E1
HGTD6N50E1S
500
500
±20
7.5
6.0
60
0.48
-55 to +150
UNITS
V
V
V
A
A
W
W/oC
oC
INTERSIL CORPORATION’S PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073
4,587,713
4,641,162
4,794,432
4,860,080
4,969,027
4,417,385
4,598,461
4,644,637
4,801,986
4,883,767
4,430,792
4,605,948
4,682,195
4,803,533
4,888,627
4,443,931
4,618,872
4,684,413
4,809,045
4,890,143
4,466,176
4,620,211
4,694,313
4,809,047
4,901,127
4,516,143
4,631,564
4,717,679
4,810,665
4,904,609
4,532,534
4,639,754
4,743,952
4,823,176
4,933,740
4,567,641
4,639,762
4,783,690
4,837,606
4,963,951
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
1970
File Number 2413.4
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet HGTD6N40E1.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| HGTD6N40E1 | 6A/ 400V and 500V N-Channel IGBTs | Intersil Corporation |
| HGTD6N40E1S | 6A/ 400V and 500V N-Channel IGBTs | Intersil Corporation |
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