DataSheet.es    


PDF HGTD8P50G1 Data sheet ( Hoja de datos )

Número de pieza HGTD8P50G1
Descripción 8A/ 500V P-Channel IGBTs
Fabricantes Intersil Corporation　
Logotipo Intersil Corporation Logotipo



Hay una vista previa y un enlace de descarga de HGTD8P50G1 (archivo pdf) en la parte inferior de esta página.


Total 9 Páginas

No Preview Available ! HGTD8P50G1 Hoja de datos, Descripción, Manual

HGTD8P50G1,
HGTD8P50G1S
March 1997
8A, 500V P-Channel IGBTs
Features
• 8A, 500V
• 3.7V VCE(SAT)
• Typical Fall Time - 1800ns
• High Input Impedance
• TJ = +150oC
Description
The HGTD8P50G1 and the HGTD8P50G1S are P-channel
enhancement-mode insulated gate bipolar transistors (IGBTs)
designed for high voltage, low on-dissipation applications such
as switching regulators and motor drives. This P- channel IGBT
can be paired with N-Channel IGBTs to form a complementary
power switch and it is ideal for half bridge circuit configurations.
These types can be operated directly from low power integrated
circuits.
PACKAGING AVAILABILITY
PART NUMBER
PACKAGE
BRAND
HGTD8P50G1
TO-251AA
G8P50G
HGTD8P50G1S
TO-252AA
G8P50G
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-252AA variant in the tape and reel, i.e.,
HGTD8P50G1S9A.
The development type number for these devices is TA49015.
Package
JEDEC TO-251AA
EMITTER
COLLECTOR
GATE
(FLANGE)
COLLECTOR
JEDEC TO-252AA
GATE
EMITTER
(FLANGE)
COLLECTOR
Symbol
C
G
E
Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified
Collector-Emitter Breakdown Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES
Emitter-Collector Breakdown Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVECS
Collector Current Continuous
At TC = +25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25
At TC = +90oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC90
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM
Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
Gate-Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM
Switching SOA at TC = +25oC, VCL = -350V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .SSOA
No Snubber, Figure 17 - Circuit 1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
With 0.1µF Capacitor, Figure 17 - Circuit 2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation Total at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating TC > +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
(0.125" from case for 5s)
NOTE:
1. TJ = 25oC, VCL = 350V, RGE = 25Ω, Figure 17 - Circuit 2 (C1 = 0.1µF)
HGTD8P50G1/G1S
-500
10
-12
-8
-18
±20
±30
-3
-18
66
0.53
-40 to +150
+260
UNITS
V
V
A
A
A
V
V
A
A
W
W/oC
oC
oC
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
1
File Number 3649.3

1 page




HGTD8P50G1 pdf
HGTD8P50G1, HGTD8P50G1S
Typical Performance Curves (Continued)
VCE = -350V, VGE = -15V, RG = 25Ω, L = 100µH
-7
FIG. 17, CIRCUIT 1
-6
6.5
6.0
VCE = VGE, ICE = 1.0mA
-5 5.5
-4 5.0
-3
-50
0 50 100
TC, CASE TEMPERATURE (oC)
FIGURE 13. LATCHING CURRENT AS A FUNCTION OF
JUNCTION TEMPERATURE
150
4.5
-40
0 40 80 120
TC, CASE TEMPERATURE (oC)
160
FIGURE 14. GATE THRESHOLD VOLTAGE AS A FUNCTION OF
JUNCTION TEMPERATURE
100 0.5
0.2
0.1
10-1 0.05
0.02
t1
PDS
t2
0.01
10-2
SINGLE PULSE
NOTES:
1. DUTY FACTOR, D = t1/t2
2.PEAK TJ = (PDS x ZθJC x RθJC) + TA
10-3
10-5
10-4
10-3
10-2
10-1
100
t1, RECTANGULAR PULSE DURATION (s)
FIGURE 15. IGBT NORMALIZED TRANSIENT THERMAL
IMPEDANCE, JUNCTION TO CASE
101
TC = 25oC, VGE = -15V, RG = 25Ω, L = 100µH
15
12
9
FIG. 17, CIRCUIT 1
6
3
0
0 100 200 300 400
VCE, COLLECTOR-EMITTER (V)
FIGURE 16. LATCHING CURRENT AS A FUNCTION OF
COLLECTOR-EMITTER VOLTAGE
500
Test Circuits
CIRCUIT 1
RG = 25Ω
L = 100µH
-
VCC = 350V
+
CIRCUIT 2
D1 = GSI TranZorb
RG = 25Ω
L = 100µH
D1
C1
-
VCC = 350V
+
FIGURE 17. INDUCTIVE SWITCHING TEST CIRCUITS
5

5 Page










PáginasTotal 9 Páginas
PDF Descargar[ Datasheet HGTD8P50G1.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
HGTD8P50G18A/ 500V P-Channel IGBTsIntersil Corporation
Intersil Corporation
HGTD8P50G1S8A/ 500V P-Channel IGBTsIntersil Corporation
Intersil Corporation

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

 Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

 Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar