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HGTG11N120CND PDF даташит

Спецификация HGTG11N120CND изготовлена ​​​​«Intersil Corporation» и имеет функцию, называемую «43A/ 1200V/ NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode».

Детали детали

Номер произв HGTG11N120CND
Описание 43A/ 1200V/ NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
Производители Intersil Corporation
логотип Intersil Corporation логотип 

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HGTG11N120CND Даташит, Описание, Даташиты
Data Sheet
HGTG11N120CND
January 2000 File Number 4580.2
43A, 1200V, NPT Series N-Channel IGBT
with Anti-Parallel Hyperfast Diode
The HGTG11N120CND is a Non-Punch Through (NPT)
IGBT design. This is a new member of the MOS gated high
voltage switching IGBT family. IGBTs combine the best
features of MOSFETs and bipolar transistors. This device
has the high input impedance of a MOSFET and the low
on-state conduction loss of a bipolar transistor. The IGBT
used is the development type TA49291. The Diode used is
the development type TA49189.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly Developmental Type TA49303.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTG11N120CND
TO-247
11N120CND
NOTE: When ordering, use the entire part number.
Features
• 43A, 1200V, TC = 25oC
• 1200V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 340ns at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss
Thermal Impedance SPICE Model
www.intersil.com
Packaging
JEDEC STYLE TO-247
E
C
G
Symbol
C
G
E
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,598,461
4,682,195
4,417,385
4,605,948
4,684,413
4,430,792
4,620,211
4,694,313
4,443,931
4,631,564
4,717,679
4,466,176
4,639,754
4,743,952
4,516,143
4,639,762
4,783,690
4,532,534
4,641,162
4,794,432
4,587,713
4,644,637
4,801,986
4,803,533
4,888,627
4,809,045
4,890,143
4,809,047
4,901,127
4,810,665
4,904,609
4,823,176
4,933,740
4,837,606
4,963,951
4,860,080
4,969,027
4,883,767
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000









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HGTG11N120CND Даташит, Описание, Даташиты
HGTG11N120CND
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES
Collector Current Continuous
At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM
Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Short Circuit Withstand Time (Note 2) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC
Short Circuit Withstand Time (Note 2) at VGE = 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC
HGTG11N120CND
1200
43
22
80
±20
±30
55A at 1200V
298
2.38
-55 to 150
260
8
15
UNITS
V
A
A
A
V
V
W
W/oC
oC
oC
µs
µs
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Pulse width limited by maximum junction temperature.
2. VCE(PK) = 840V, TJ = 125oC, RG = 10.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to Emitter Breakdown Voltage
Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
Gate to Emitter Plateau Voltage
On-State Gate Charge
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy
Turn-Off Energy (Note 3)
BVCES
ICES
VCE(SAT)
VGE(TH)
IGES
SSOA
VGEP
QG(ON)
td(ON)I
trI
td(OFF)I
tfI
EON
EOFF
IC = 250µA, VGE = 0V
VCE = BVCES
TC = 25oC
TC = 125oC
TC = 150oC
IC = 11A,
VGE = 15V
TC = 25oC
TC = 150oC
IC = 90µA, VCE = VGE
VGE = ±20V
TJ = 150oC, RG = 10Ω, VGE = 15V,
L = 400µH, VCE(PK) = 1200V
IC = 11A, VCE = 0.5 BVCES
IC = 11A,
VCE = 0.5 BVCES
VGE = 15V
VGE = 20V
IGBT and Diode at TJ = 25oC,
ICE = 11A,
VCE = 0.8 BVCES,
VGE = 15V,
RG = 10,
L = 2mH,
Test Circuit (Figure 20)
MIN TYP MAX UNITS
1200
-
-
V
- - 250 µA
- 300
-
µA
- - 3.5 mA
- 2.1 2.4
V
- 2.9 3.5
V
6.0 6.8
-
V
-
-
±250
nA
55 - - A
- 10.4 -
V
- 100 120 nC
- 130 150 nC
- 23 26 ns
- 12 16 ns
- 180 240 ns
- 190 220 ns
- 0.95 1.3
mJ
- 1.3 1.6 mJ
2









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HGTG11N120CND Даташит, Описание, Даташиты
HGTG11N120CND
Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued)
PARAMETER
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy
Turn-Off Energy (Note 3)
Diode Forward Voltage
Diode Reverse Recovery Time
Thermal Resistance Junction To Case
SYMBOL
td(ON)I
trI
td(OFF)I
tfI
EON
EOFF
VEC
trr
RθJC
TEST CONDITIONS
IGBT and Diode at TJ = 150oC,
ICE = 11A,
VCE = 0.8 BVCES,
VGE = 15V,
RG = 10,
L = 2mH,
Test Circuit (Figure 20)
IEC = 11A
IEC = 11A, dlEC/dt = 200A/µs
IEC = 1A, dlEC/dt = 200A/µs
IGBT
Diode
MIN TYP MAX UNITS
- 21 24 ns
- 12 16 ns
- 210 280 ns
- 360 400 ns
- 1.9 2.5 mJ
- 2.1 2.5 mJ
- 2.6 3.2
V
- 60 70 ns
- 32 40 ns
-
-
0.42
oC/W
-
-
1.25
oC/W
NOTE:
3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
Typical Performance Curves Unless Otherwise Specified
45
40
35
30
25
20
15
10
5
0
25
VGE = 15V
50 75 100 125
TC, CASE TEMPERATURE (oC)
150
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
60
50
TJ = 150oC, RG = 10, VGE = 15V, L = 400µH
40
30
20
10
0
0 200 400 600 800 1000 1200 1400
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
3










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