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PDF HGTG12N60C3D Data sheet ( Hoja de datos )
| Número de pieza | HGTG12N60C3D | |
| Descripción | 24A/ 600V/ UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode | |
| Fabricantes | Intersil Corporation | |
| Logotipo |  |
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Data Sheet
HGTG12N60C3D
January 2000 File Number 4043.2
24A, 600V, UFS Series N-Channel IGBT
with Anti-Parallel Hyperfast Diode
The HGTG12N60C3D is a MOS gated high voltage switching
device combining the best features of MOSFETs and bipolar
transistors. The device has the high input impedance of a
MOSFET and the low on-state conduction loss of a bipolar
transistor. The much lower on-state voltage drop varies only
moderately between 25oC and 150oC. The IGBT used is the
development type TA49123. The diode used in anti parallel
with the IGBT is the development type TA49061.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential.
Formerly Developmental Type TA49117.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTG12N60C3D TO-247
G12N60C3D
NOTE: When ordering, use the entire part number.
Features
• 24A, 600V at TC = 25oC
• Typical Fall Time. . . . . . . . . . . . . . . . 210ns at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss
• Hyperfast Anti-Parallel Diode
Packaging
JEDEC STYLE TO-247
E
C
G
Symbol
C
G
E
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,598,461
4,682,195
4,803,533
4,888,627
4,417,385
4,605,948
4,684,413
4,809,045
4,890,143
4,430,792
4,620,211
4,694,313
4,809,047
4,901,127
4,443,931
4,631,564
4,717,679
4,810,665
4,904,609
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
4,587,713
4,644,637
4,801,986
4,883,767
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000
1 page  
HGTG12N60C3D
Typical Performance Curves (Continued)
2.0
TJ = 150oC, RG = 25Ω, L = 100µH, VCE(PK) = 480V
1.5
VGE = 10V
1.0
VGE = 15V
0.5
0
5 10 15 20 25 30
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
3.0
TJ = 150oC, RG = 25Ω, L = 100µH, VCE(PK) = 480V
2.5
2.0
1.5
VGE = 10V OR 15V
1.0
0.5
0
5 10
15 20 25 30
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
200
100
VGE = 10V
TJ = 150oC, TC = 75oC
RG = 25Ω, L = 100µH
VGE = 15V
10
1
5
fMAX1 = 0.05/(tD(OFF)I + tD(ON)I)
fMAX2 = (PD - PC)/(EON + EOFF)
PD = ALLOWABLE DISSIPATION
PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
RθJC = 1.2oC/W
10
20
ICE, COLLECTOR TO EMITTER CURRENT (A)
30
FIGURE 13. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
100 TJ = 150oC, VGE = 15V, RG = 25Ω, L = 100µH
80
60
LIMITED BY
CIRCUIT
40
20
0
0 100 200 300 400 500 600
VCE(PK), COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 14. SWITCHING SAFE OPERATING AREA
2500
2000
CIES
FREQUENCY = 1MHz
1500
1000
500
0
0
CRES
COES
5 10 15 20
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
25
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
IG(REF) = 1.276mA, RL = 50Ω, TC = 25oC
600 15
480
VCE = 600V
360
12
9
240
VCE = 400V
VCE = 200V
120
6
3
00
0 10 20 30 40 50 60
QG, GATE CHARGE (nC)
FIGURE 16. GATE CHARGE WAVEFORMS
5
5 Page | ||
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| PDF Descargar | [ Datasheet HGTG12N60C3D.PDF ] | |
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