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PDF HGTG15N120C3D Data sheet ( Hoja de datos )
| Número de pieza | HGTG15N120C3D | |
| Descripción | 35A/ 1200V/ UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode | |
| Fabricantes | Intersil Corporation | |
| Logotipo |  |
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HGTG15N120C3D
May 1997
35A, 1200V, UFS Series N-Channel IGBT
with Anti-Parallel Hyperfast Diode
Features
• 35A, 1200V at TC = 25oC
• 1200V Switching SOA Capability
• Typical Fall Time at TJ = 150oC . . . . . . . . . . . . . . 350ns
• Short Circuit Rating
• Low Conduction Loss
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTG15N120C3D TO-247
15N120C3D
NOTE: When ordering, use the entire part number.
Formerly Developmental Type TA49133.
Description
The HGTG15N120C3D is a MOS gated high voltage switch-
ing device combining the best features of MOSFETs and
bipolar transistors. This device has the high input impedance
of a MOSFET and the low on-state conduction loss of a
bipolar transistor. The much lower on-state voltage drop var-
ies only moderately between 25oC and 150oC.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
The diode used in anti-Parallel with the IGBT is the same as
the RHRP15120. The IGBT was formerly development type
TA49145.
Symbol
C
Packaging
G
E
JEDEC STYLE TO-247
E
C
G
COLLECTOR
(FLANGE)
INTERSIL CORPRATION’s IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,567,641
4,587,713
4,598,461
4,605,948
4,618,872
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
1
File Number 4267.1
1 page  
HGTG15N120C3D
Typical Performance Curves Unless Otherwise Specified (Continued)
300 TJ = 150oC, RG = 10Ω, L = 1mH, VCE(PK) = 960V
VGE = 10V
100
VGE = 15V
10
500
TJ = 150oC, RG = 10Ω, L = 1mH, VCE(PK) = 960V
400
VGE = 10V
VGE = 15V
300
200
1
5 10 15 20
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9. TURN-ON RISE TIME AS A FUNCTION OF
COLLECTOR TO EMITTER CURRENT
100
25 5 10 15 20 25
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10. TURN-OFF FALL TIME AS A FUNCTION OF
COLLECTOR TO EMITTER CURRENT
30
10
TJ = 150oC, RG = 10Ω, L = 1mH, VCE(PK) = 960V
8
VGE = 10V
6
4
2 VGE = 15V
0
5 10 15 20 25
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11. TURN-ON ENERGY LOSS AS A FUNCTION OF
COLLECTOR TO EMITTER CURRENT
16 TJ = 150oC, RG = 10Ω, L = 1mH, VCE(PK) = 960V
14
12
10 VGE = 10V
8 VGE = 15V
6
4
2
0
5 10 15 20 25 30
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12. TURN-OFF ENERGY LOSS AS A FUNCTION OF
COLLECTOR TO EMITTER CURRENT
5
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet HGTG15N120C3D.PDF ] | |
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