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HGTG20N120 PDF даташит

Спецификация HGTG20N120 изготовлена ​​​​«Intersil Corporation» и имеет функцию, называемую «34A/ 1200V N-Channel IGBT».

Детали детали

Номер произв HGTG20N120
Описание 34A/ 1200V N-Channel IGBT
Производители Intersil Corporation
логотип Intersil Corporation логотип 

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HGTG20N120 Даташит, Описание, Даташиты
Semiconductor
HGTG20N120E2
April 1995
34A, 1200V N-Channel IGBT
Features
• 34A, 1200V
• Latch Free Operation
• Typical Fall Time - 780ns
• High Input Impedance
• Low Conduction Loss
Description
The HGTG20N120E2 is a MOS gated, high voltage switch-
ing device combining the best features of MOSFETs and
bipolar transistors. The device has the high input impedance
of a MOSFET and the low on-state conduction loss of a
bipolar transistor. The much lower on-state voltage drop
varies only moderately between +25oC and +150oC.
IGBTs are ideal for many high voltage switching applications
operating at frequencies where low conduction losses are
essential, such as: AC and DC motor controls, power
supplies and drivers for solenoids, relays and contactors.
The development type number for this device is TA49009.
PACKAGING AVAILABILITY
PART NUMBER
PACKAGE
HGTG20N120E2 TO-247
BRAND
G20N120E2
Package
JEDEC STYLE TO-247
COLLECTOR
(BOTTOM SIDE
METAL)
EMITTER
COLLECTOR
GATE
Terminal Diagram
C
G
E
Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified
Collector-Emitter Breakdown Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES
Collector-Gate Breakdown Voltage RGE = 1M. . . . . . . . . . . . . . . . . . . . . . . . . . . BVCGR
Collector Current Continuous
At TC = +25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25
At TC = +90oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC90
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM
Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
Gate-Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM
Switching SOA at TC = +150oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .SSOA
Power Dissipation Total at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating TC > +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
(0.125" from case for 5 seconds)
Short Circuit Withstand Time (Note 2)
At VGE = 15V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . tSC
At VGE = 10V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . tSC
NOTES:
HGTG20N120E2
1200
1200
34
20
100
±20
±30
100A at 0.8 BVCES
150
1.20
-55 to +150
260
3
15
UNITS
V
V
A
A
A
V
V
-
W
W/oC
oC
oC
µs
µs
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. VCE(PEAK) = 720V, TC = +125oC, RGE = 25
HARRIS SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,567,641
4,587,713
4,598,461
4,605,948
4,618,872
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright © Harris Corporation 1995
3-98
File Number 3370.2









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HGTG20N120 Даташит, Описание, Даташиты
Specifications HGTG20N120E2
Electrical Specifications TC = +25oC, Unless Otherwise Specified
LIMITS
PARAMETERS
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
Collector-Emitter Breakdown
Voltage
BVCES IC = 250µA, VGE = 0V
1200
-
-
V
Collector-Emitter Leakage Current
Collector-Emitter Saturation
Voltage
Gate-Emitter Threshold Voltage
ICES
VCE(SAT)
VGE(TH)
VCE = BVCES
VCE = 0.8 BVCES
IC = IC90, VGE = 15V
IC = IC90, VGE = 10V
IC = 500µA,
VCE = VGE
TC = +25oC
TC = +125oC
TC = +25oC
TC = +125oC
TC = +25oC
TC = +125oC
TC = +25oC
- - 250 µA
- - 1.0 mA
- 2.9 3.5 V
- 3.0 3.6 V
- 3.1 3.8 V
- 3.3 4.0 V
3.0 4.5 6.0
V
Gate-Emitter Leakage Current
IGES
VGE = ±20V
-
-
±250
nA
Gate-Emitter Plateau Voltage
VGEP
IC = IC90, VCE = 0.5 BVCES
- 7.0 -
V
On-State Gate Charge
QG(ON)
IC = IC90,
VCE = 0.5 BVCES
VGE = 15V
VGE = 20V
-
110 150
nC
-
150 200
nC
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
tD(ON)
tR
tD(OFF)I
RL = 48
L = 50µH
IC = IC90, VGE = 15V,
VCE = 0.8 BVCES,
RG = 25,
TJ = +125oC
-
-
-
100 -
150 -
520 620
ns
ns
ns
Current Fall Time
tFI
-
780 1000
ns
Turn-Off Energy (Note 1)
WOFF
- 7.0 - mJ
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
tD(ON)
tR
tD(OFF)I
RL = 48
L = 50µH
IC = IC90, VGE = 10V,
VCE = 0.8 BVCES,
RG = 25,
TJ = +125oC
-
-
-
100 -
150 -
420 520
ns
ns
ns
Current Fall Time
tFI
-
780 1000
ns
Turn-Off Energy (Note 1)
Thermal Resistance
WOFF
RθJC
- 7.0 - mJ
-
0.70
0.83 oC/W
NOTE:
1. Turn-Off Energy Loss (WOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and
ending at the point where the collector current equals zero (ICE = 0A). The HGTG20N120E2 was tested per JEDEC standard No. 24-1
Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
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HGTG20N120 Даташит, Описание, Даташиты
Typical Performance Curves
HGTG20N120E2
FIGURE 1. TRANSFER CHARACTERISTICS (TYPICAL)
FIGURE 2. SATURATION CHARACTERISTICS (TYPICAL)
FIGURE 3. MAXIMUM DC COLLECTOR CURRENT AS A
FUNCTION OF CASE TEMPERATURE
FIGURE 4. FALL TIME AS A FUNCTION OF COLLECTOR-
EMITTER CURRENT
FIGURE 5. CAPACITANCE AS A FUNCTION OF COLLECTOR-
EMITTER VOLTAGE
FIGURE 6. NORMALIZED SWITCHING WAVEFORMS AT
CONSTANT GATE CURRENT. (REFER TO
APPLICATION NOTES AN7254 AND AN7260)
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