DataSheet26.com

HGTG20N60A4 PDF даташит

Спецификация HGTG20N60A4 изготовлена ​​​​«Fairchild Semiconductor» и имеет функцию, называемую «600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode».

Детали детали

Номер произв HGTG20N60A4
Описание 600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
Производители Fairchild Semiconductor
логотип Fairchild Semiconductor логотип 

8 Pages
scroll

No Preview Available !

HGTG20N60A4 Даташит, Описание, Даташиты
Data Sheet
HGTG20N60A4, HGTP20N60A4
December 2001
600V, SMPS Series N-Channel IGBTs
The HGTG20N60A4 and HGTP20N60A4 are MOS gated
high voltage switching devices combining the best features
of MOSFETs and bipolar transistors. These devices have the
high input impedance of a MOSFET and the low on-state
conduction loss of a bipolar transistor. The much lower
on-state voltage drop varies only moderately between 25oC
and 150oC.
This IGBT is ideal for many high voltage switching
applications operating at high frequencies where low
conduction losses are essential. This device has been
optimized for high frequency switch mode power
supplies.
Formerly Developmental Type TA49339.
Ordering Information
PART NUMBER
HGTP20N60A4
PACKAGE
TO-220AB
BRAND
20N60A4
HGTG20N60A4
TO-247
20N60A4
NOTE: When ordering, use the entire part number.
Symbol
C
G
E
Features
• >100kHz Operation at 390V, 20A
• 200kHz Operation at 390V, 12A
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . . 55ns at TJ = 125oC
• Low Conduction Loss
Temperature Compensating SABER™ Model
www.intersil.com
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards
Packaging
JEDEC TO-220AB ALTERNATE VERSION
COLLECTOR
(FLANGE)
E
C
G
JEDEC STYLE TO-247
E
C
G
COLLECTOR
(FLANGE)
FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
©2001 Fairchild Semiconductor Corporation
HGTG20N60A4, HGTP20N60A4 Rev. B









No Preview Available !

HGTG20N60A4 Даташит, Описание, Даташиты
HGTG20N60A4, HGTP20N60A4
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
HGTG20N60A4, HGTP20N60A4
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES
Collector Current Continuous
At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM
Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TPKG
600
70
40
280
±20
±30
100A at 600V
290
2.32
-55 to 150
300
260
UNITS
V
A
A
A
V
V
W
W/oC
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.
Electrical Specifications TJ = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to Emitter Breakdown Voltage
Emitter to Collector Breakdown Voltage
Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
Gate to Emitter Plateau Voltage
On-State Gate Charge
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 3)
Turn-On Energy (Note 3)
Turn-Off Energy (Note 2)
BVCES
BVECS
ICES
VCE(SAT)
VGE(TH)
IGES
SSOA
VGEP
Qg(ON)
td(ON)I
trI
td(OFF)I
tfI
EON1
EON2
EOFF
IC = 250µA, VGE = 0V
IC = 10mA, VGE = 0V
VCE = 600V
TJ = 25oC
TJ = 125oC
IC = 20A,
VGE = 15V
TJ = 25oC
TJ = 125oC
IC = 250µA, VCE = 600V
VGE = ±20V
TJ = 150oC, RG = 3Ω, VGE = 15V
L = 100µH, VCE = 600V
IC = 20A, VCE = 300V
IC = 20A,
VCE = 300V
VGE = 15V
VGE = 20V
IGBT and Diode at TJ = 25oC
ICE = 20A
VCE = 390V
VGE =15V
RG = 3
L = 500µH
Test Circuit (Figure 20)
MIN TYP MAX UNITS
600 - - V
15 - - V
- - 250 µA
- - 2.0 mA
- 1.8 2.7
V
- 1.6 2.0
V
4.5 5.5
7.0
V
-
-
±250
nA
100 - - A
- 8.6
-
V
- 142 162 nC
- 182 210 nC
- 15
-
ns
- 12
-
ns
- 73
-
ns
- 32
-
ns
- 105
-
µJ
- 280 350 µJ
- 150 200 µJ
©2001 Fairchild Semiconductor Corporation
HGTG20N60A4, HGTP20N60A4 Rev. B









No Preview Available !

HGTG20N60A4 Даташит, Описание, Даташиты
HGTG20N60A4, HGTP20N60A4
Electrical Specifications TJ = 25oC, Unless Otherwise Specified (Continued)
PARAMETER
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 3)
SYMBOL
td(ON)I
trI
td(OFF)I
tfI
EON1
TEST CONDITIONS
IGBT and Diode at TJ = 125oC
ICE = 20A
VCE = 390V
VGE = 15V
RG = 3
L = 500µH
Test Circuit (Figure 20)
MIN TYP MAX UNITS
- 15 21 ns
- 13 18 ns
- 105 135 ns
- 55 73 ns
- 115
-
µJ
Turn-On Energy (Note 3)
EON2
- 510 600 µJ
Turn-Off Energy (Note 2)
Thermal Resistance Junction To Case
EOFF
RθJC
- 330 500 µJ
-
-
0.43
oC/W
NOTES:
2. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
3. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in
Figure 20.
Typical Performance Curves Unless Otherwise Specified
100
DIE CAPABILITY
VGE = 15V
80
PACKAGE LIMIT
60
40
20
0
25 50 75 100 125
TC, CASE TEMPERATURE (oC)
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
150
500
TC VGE
75oC 15V
300
fMAX1 = 0.05 / (td(OFF)I + td(ON)I)
100 fMAX2 = (PD - PC) / (EON2 + EOFF)
PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
RØJC = 0.43oC/W, SEE NOTES
TJ = 125oC, RG = 3, L = 500µH, VCE = 390V
40
5 10 20 30
40
ICE, COLLECTOR TO EMITTER CURRENT (A)
50
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
120 TJ = 150oC, RG = 3, VGE = 15V, L = 100µH
100
80
60
40
20
0
0 100 200 300 400 500 600 700
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
14 VCE = 390V, RG = 3, TJ = 125oC 450
12 400
ISC
10 350
8 300
6 250
4 tSC 200
2 150
0 100
10 11 12 13 14 15
VGE, GATE TO EMITTER VOLTAGE (V)
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
©2001 Fairchild Semiconductor Corporation
HGTG20N60A4, HGTP20N60A4 Rev. B










Скачать PDF:

[ HGTG20N60A4.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
HGTG20N60A4600V/ SMPS Series N-Channel IGBTsFairchild Semiconductor
Fairchild Semiconductor
HGTG20N60A4600V/ SMPS Series N-Channel IGBTsIntersil Corporation
Intersil Corporation
HGTG20N60A4600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast DiodeFairchild Semiconductor
Fairchild Semiconductor
HGTG20N60A4600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast DiodeIntersil Corporation
Intersil Corporation

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск