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HGTG27N120BN PDF даташит

Спецификация HGTG27N120BN изготовлена ​​​​«Fairchild Semiconductor» и имеет функцию, называемую «72A/ 1200V/ NPT Series N-Channel IGBT».

Детали детали

Номер произв HGTG27N120BN
Описание 72A/ 1200V/ NPT Series N-Channel IGBT
Производители Fairchild Semiconductor
логотип Fairchild Semiconductor логотип 

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HGTG27N120BN Даташит, Описание, Даташиты
Data Sheet
HGTG27N120BN / HGT5A27N120BN
August 2002
72A, 1200V, NPT Series N-Channel IGBT
The HGTG27N120BN and HGT5A27N120BN are Non-
Punch Through (NPT) IGBT design. This is a new member
of the MOS gated high voltage switching IGBT family. IGBTs
combine the best features of MOSFETs and bipolar
transistors. This device has the high input impedance of a
MOSFET and the low on-state conduction loss of a bipolar
transistor.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly Developmental Type TA49280.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTG27N120BN
TO-247
27N120BN
HGT5A27N120BN
TO-247-ST
27N120BN
NOTE: When ordering, use the entire part number.
Symbol
C
G
E
Features
• 72A, 1200V, TC = 25oC
• 1200V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 140ns at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss
Thermal Impedance SPICE Model
Temperature Compensating SABER™ Model
www.fairchildsemi.com
• Avalanche Rated
Packaging
COLLECTOR
(BOTTOM SIDE
METAL)
JEDEC STYLE TO-247
E
C
G
JEDEC STYLE TO-247-ST
COLLECTOR
(BOTTOM SIDE
METAL)
E
C
G
FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
©2002 Fairchild Semiconductor Corporation
HGTG27N120BN / HGT5A27N12BN Rev. C1









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HGTG27N120BN Даташит, Описание, Даташиты
HGTG27N120BN / HGT5A27N120BN
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES
Collector Current Continuous
At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGEM
Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Forward Voltage Avalanche Energy (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAV
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Short Circuit Withstand Time (Note 3) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC
Short Circuit Withstand Time (Note 3) at VGE = 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC
HGTG27N120BN
1200
72
34
216
±20
±30
150A at 1200V
500
4.0
135
-55 to 150
260
8
15
UNITS
V
A
A
A
V
V
W
W/oC
mJ
oC
oC
µs
µs
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Pulse width limited by Max junction temperature.
2. ICE = 30A, L = 400µH, TJ = 125oC
3. VCE(PK) = 960V, TJ = 125oC, RG = 3Ω.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to Emitter Breakdown Voltage
Emitter to Collector Breakdown Voltage
Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
Gate to Emitter Plateau Voltage
On-State Gate Charge
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 5)
Turn-On Energy (Note 5)
Turn-Off Energy (Note 4)
BVCES
BVECS
ICES
VCE(SAT)
VGE(TH)
IGES
SSOA
VGEP
QG(ON)
td(ON)I
trI
td(OFF)I
tfI
EON1
EON2
EOFF
IC = 250µA, VGE = 0V
IC = 10mA, VGE = 0V
VCE = 1200V
TC = 25oC
TC = 125oC
TC = 150oC
IC = 27A,
TC = 25oC
VGE = 15V
TC = 150oC
IC = 250µA, VCE = VGE
VGE = ±20V
TJ = 150oC, RG = 3Ω, VGE = 15V,
L = 200µH, VCE(PK) = 1200V
IC = IC110, VCE = 0.5 BVCES
IC = 27A,
VCE = 600V
VGE = 15V
VGE = 20V
IGBT and Diode at TJ = 25oC,
ICE = 27A,
VCE = 960V,
VGE = 15V,
RG = 3Ω,
L = 1mH,
Test Circuit (Figure 18)
MIN
1200
15
-
-
-
-
-
6
-
150
-
-
-
-
-
-
-
-
-
-
TYP
-
-
-
300
-
2.45
3.8
6.6
-
-
9.2
270
350
24
20
195
80
2.2
2.7
2.3
MAX
-
-
250
-
4
2.7
4.2
-
±250
-
UNITS
V
V
µA
µA
mA
V
V
V
nA
A
-V
325 nC
420 nC
30 ns
25 ns
240 ns
120 ns
- mJ
3.3 mJ
2.8 mJ
©2002 Fairchild Semiconductor Corporation
HGTG27N120BN / HGT5A27N12BN Rev. C1









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HGTG27N120BN Даташит, Описание, Даташиты
HGTG27N120BN / HGT5A27N120BN
Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued)
PARAMETER
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 5)
Turn-On Energy (Note 5)
SYMBOL
td(ON)I
trI
td(OFF)I
tfI
EON1
EON2
TEST CONDITIONS
IGBT and Diode at TJ = 150oC,
ICE = 27A,
VCE = 960V,
VGE = 15V,
RG = 3,
L = 1mH,
Test Circuit (Figure 18)
MIN TYP MAX UNITS
- 22 28 ns
- 20 25 ns
- 220 280 ns
- 140 200 ns
- 2.7
-
mJ
- 5.1 6.5 mJ
Turn-Off Energy (Note 4)
Thermal Resistance Junction To Case
NOTES:
EOFF
RθJC
- 3.4 4.2 mJ
-
-
0.25
oC/W
4. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
5. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in
Figure 18.
Typical Performance Curves Unless Otherwise Specified
80
VGE = 15V
70
60
50
40
30
20
10
0
25 50 75 100 125 150
TC, CASE TEMPERATURE (oC)
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
200
TJ = 150oC, RG = 3, VGE = 15V, L = 200µH
160
120
80
40
0
0 200 400 600 800 1000 1200 1400
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
TJ = 150oC, RG = 3, L = 1mH, VCE = 960V
TC VGE
100 75oC 15V
75oC 12V
50
50
VCE = 960V, RG = 3, TJ = 125oC
40
30
500
ISC
400
300
10
fMAX1 = 0.05 / (td(OFF)I + td(ON)I)
fMAX2 = (PD - PC) / (EON2 + EOFF)
PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
RØJC = 0.25oC/W, SEE NOTES
1
5 10 20
TC
110oC
110oC
VGE
15V
12V
ICE, COLLECTOR TO EMITTER CURRENT (A)
60
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
20 200
tSC
10 100
00
11 12 13 14 15 16
VGE, GATE TO EMITTER VOLTAGE (V)
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
©2002 Fairchild Semiconductor Corporation
HGTG27N120BN / HGT5A27N12BN Rev. C1










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