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HGTG30N120CN PDF даташит

Спецификация HGTG30N120CN изготовлена ​​​​«Intersil Corporation» и имеет функцию, называемую «75A/ 1200V/ NPT Series N-Channel IGBT».

Детали детали

Номер произв HGTG30N120CN
Описание 75A/ 1200V/ NPT Series N-Channel IGBT
Производители Intersil Corporation
логотип Intersil Corporation логотип 

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HGTG30N120CN Даташит, Описание, Даташиты
Data Sheet
HGTG30N120CN
January 2000 File Number 4483.3
75A, 1200V, NPT Series N-Channel IGBT
The HGTG30N120CN is a Non-Punch Through (NPT) IGBT
design. This is a new member of the MOS gated high
voltage switching IGBT family. IGBTs combine the best
features of MOSFETs and bipolar transistors. This device
has the high input impedance of a MOSFET and the low on-
state conduction loss of a bipolar transistor.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly Developmental Type TA49281.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTG30N120CN
TO-247
G30N120CN
NOTE: When ordering, use the entire part number.
Symbol
C
Features
• 75A, 1200V, TC = 25oC
• 1200V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 350ns at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss
• Avalanche Rated
Thermal Impedance SPICE Model
Temperature Compensating SABER™ Model
www.intersil.com
Packaging
JEDEC STYLE TO-247
COLLECTOR
(BOTTOM SIDE
METAL)
E
C
G
G
E
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000
SABER™ is a trademark of Analogy, Inc.









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HGTG30N120CN Даташит, Описание, Даташиты
HGTG30N120CN
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES
Collector Current Continuous
At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM
Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Forward Voltage Avalanche Energy (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAV
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Short Circuit Withstand Time (Note 3) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC
Short Circuit Withstand Time (Note 3) at VGE = 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC
HGTG30N120CN
1200
75
40
240
±20
±30
150A at 1200V
500
4.0
135
-55 to 150
260
8
15
UNITS
V
A
A
A
V
V
W
W/oC
mJ
oC
oC
µs
µs
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Pulse width limited by maximum junction temperature.
2. ICE = 30A, L = 400µH, TJ = 125oC.
3. VCE(PK) = 960V, TJ = 125oC, RG = 3.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to Emitter Breakdown Voltage
Emitter to Collector Breakdown Voltage
Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
BVCES
BVECS
ICES
VCE(SAT)
VGE(TH)
IGES
SSOA
IC = 250µA, VGE = 0V
IC = 10mA, VGE = 0V
VCE = BVCES
TC = 25oC
TC = 125oC
TC = 150oC
IC = IC110,
TC = 25oC
VGE = 15V
TC = 150oC
IC = 250µA, VCE = VGE
VGE = ±20V
TJ = 150oC, RG = 3Ω, VGE = 15V,
L = 200µH, VCE(PK) = 1200V
Gate to Emitter Plateau Voltage
On-State Gate Charge
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 4)
Turn-On Energy (Note 4)
Turn-Off Energy (Note 5)
VGEP
QG(ON)
td(ON)I
trI
td(OFF)I
tfI
EON1
EON2
EOFF
IC = IC110, VCE = 0.5 BVCES
IC = IC110,
VGE = 15V
VCE = 0.5 BVCES VGE = 20V
IGBT and Diode at TJ = 25oC
ICE = IC110
VCE = 0.8 BVCES
VGE = 15V
RG = 3
L = 1mH
Test Circuit (Figure 18)
MIN TYP MAX UNITS
1200
-
-
V
15 - - V
- - 250 µA
- 600
-
µA
- - 8 mA
- 2.1 2.4
V
- 2.9 3.5
V
6.0 6.6
-
V
-
-
±250
nA
150 - - A
- 9.6
-
V
- 260 325 nC
- 330 420 nC
- 24 30 ns
- 21 26 ns
- 220 260 ns
- 180 240 ns
- 2.2
-
mJ
- 2.8 3.5 mJ
- 4.2 4.8 mJ
2









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HGTG30N120CN Даташит, Описание, Даташиты
HGTG30N120CN
Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued)
PARAMETER
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 4)
Turn-On Energy (Note 4)
Turn-Off Energy (Note 5)
Thermal Resistance Junction To Case
NOTES:
SYMBOL
td(ON)I
trI
td(OFF)I
tfI
EON1
EON2
EOFF
RθJC
TEST CONDITIONS
IGBT and Diode at TJ = 150oC
ICE = IC110
VCE = 0.8 BVCES
VGE = 15V
RG = 3
L = 1mH
Test Circuit (Figure 18)
MIN TYP MAX UNITS
- 22 28 ns
- 21 26 ns
- 260 300 ns
- 350 400 ns
- 2.6
-
mJ
- 5.6 7.0 mJ
- 6.6 7.5 mJ
-
-
0.25
oC/W
4. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in
Figure 18.
5. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
Typical Performance Curves Unless Otherwise Specified
80
VGE = 15V
70
60
50
40
30
20
10
0
25
50 75 100 125
TC, CASE TEMPERATURE (oC)
150
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
200
TJ = 150oC, RG = 3, VGE = 15V, L = 200µH
160
120
80
40
0
0 200 400 600 800 1000 1200 1400
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
100
TJ = 150oC, RG = 3, L = 1mH, VCE = 960V
50
VCE = 960V, RG = 3, TJ = 125oC
40
500
ISC
400
10
fMAX1 = 0.05 / (td(OFF)I + td(ON)I)
fMAX2 = (PD - PC) / (EON2 + EOFF)
PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
1 RØJC = 0.25oC/W, SEE NOTES
5 10 20
TC
75oC
75oC
110oC
110oC
VGE
15V
12V
15V
12V
ICE, COLLECTOR TO EMITTER CURRENT (A)
60
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
30 300
20 200
tSC
10 100
00
11 12 13 14 15 16
VGE, GATE TO EMITTER VOLTAGE (V)
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
3










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Номер в каталогеОписаниеПроизводители
HGTG30N120CN75A/ 1200V/ NPT Series N-Channel IGBTIntersil Corporation
Intersil Corporation

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