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HGTG30N60B3 PDF даташит

Спецификация HGTG30N60B3 изготовлена ​​​​«Intersil Corporation» и имеет функцию, называемую «60A/ 600V/ UFS Series N-Channel IGBT».

Детали детали

Номер произв HGTG30N60B3
Описание 60A/ 600V/ UFS Series N-Channel IGBT
Производители Intersil Corporation
логотип Intersil Corporation логотип 

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HGTG30N60B3 Даташит, Описание, Даташиты
Data Sheet
HGTG30N60B3
January 2000 File Number 4444.2
60A, 600V, UFS Series N-Channel IGBT
The HGTG30N60B3 is a MOS gated high voltage switching
device combining the best features of MOSFETs and bipolar
transistors. This device has the high input impedance of a
MOSFET and the low on-state conduction loss of a bipolar
transistor. The much lower on-state voltage drop varies only
moderately between 25oC and 150oC.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly Developmental Type TA49170.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTG30N60B3
TO-247
G30N60B3
NOTE: When ordering, use the entire part number.
Symbol
C
Features
• 60A, 600V, TC = 25oC
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . . 90ns at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss
Packaging
JEDEC STYLE TO-247
E
C
G
G
E
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000









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HGTG30N60B3 Даташит, Описание, Даташиты
HGTG30N60B3
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES
Collector Current Continuous
At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM
Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Reverse Voltage Avalanche Energy. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EARV
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Short Circuit Withstand Time (Note 2) at VGE = 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC
Short Circuit Withstand Time (Note 2) at VGE = 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC
HGTG30N60B3
600
60
30
220
±20
±30
60A at 600V
208
1.67
100
-55 to 150
260
4
10
UNITS
V
A
A
A
V
V
W
W/oC
mJ
oC
oC
µs
µs
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Pulse width limited by maximum junction temperature.
2. VCE(PK) = 360V, TJ = 125oC, RG = 3Ω.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Collector to Emitter Breakdown Voltage
Emitter to Collector Breakdown Voltage
Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
BVCES
IC = 250µA, VGE = 0V
600 -
-
BVECS
ICES
VCE(SAT)
IC = 10mA, VGE = 0V
VCE = BVCES
TC = 25oC
TC = 150oC
IC = IC110,
VGE = 15V
TC = 25oC
TC = 150oC
15 28
-
- - 250
- - 3.0
- 1.45 1.9
- 1.7 2.1
VGE(TH)
IC = 250µA, VCE = VGE
4.5 5.0
6.0
IGES
SSOA
VGE = ±20V
TJ = 150oC,
RG = 3Ω,
VGE = 15V
L = 100µH,
- - ±250
VCE (PK) = 480V
VCE (PK) = 600V
200
60
-
-
-
-
V
V
µA
mA
V
V
V
nA
A
A
Gate to Emitter Plateau Voltage
On-State Gate Charge
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 4)
Turn-On Energy (Note 4)
Turn-Off Energy (Note 3)
VGEP
QG(ON)
td(ON)I
trI
td(OFF)I
tfI
EON1
EON2
EOFF
IC = IC110, VCE = 0.5 BVCES
IC = IC110,
VCE = 0.5 BVCES
VGE = 15V
VGE = 20V
IGBT and Diode at TJ = 25oC
ICE = IC110
VCE = 0.8 BVCES
VGE = 15V
RG= 3
L = 1mH
Test Circuit (Figure 17)
- 7.2
-
V
- 170 190 nC
- 230 250 nC
- 36
-
ns
- 25
-
ns
- 137
-
ns
- 58
-
ns
- 500
-
µJ
- 550 800 µJ
- 680 900 µJ
2









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HGTG30N60B3 Даташит, Описание, Даташиты
HGTG30N60B3
Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 4)
td(ON)I
trI
td(OFF)I
tfI
EON1
IGBT and Diode at TJ = 150oC
ICE = IC110
VCE = 0.8 BVCES
VGE = 15V
RG= 3
L = 1mH
Test Circuit (Figure 17)
- 32
-
ns
- 24
-
ns
- 275 320 ns
-
90 150
ns
- 500
-
µJ
Turn-On Energy (Note 4)
EON2
- 1300 1550 µJ
Turn-Off Energy (Note 3)
Thermal Resistance Junction To Case
EOFF
RθJC
- 1600 1900 µJ
- - 0.6 oC/W
NOTES:
3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
4. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in
Figure 17.
Typical Performance Curves Unless Otherwise Specified
60
VGE = 15V
50
40
30
20
10
0
25 50
75 100 125
TC, CASE TEMPERATURE (oC)
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
150
100
TJ = 150oC, RG = 3, L = 1mH,
VCE = 480V
10
1
fMAX1 = 0.05 / (td(OFF)I + td(ON)I) TC
fMAX2 = (PD - PC) / (EON2 + EOFF)
PC = CONDUCTION DISSIPATION
75oC
75oC
110oC
(DUTY FACTOR = 50%)
RØJC = 0.6oC/W, SEE NOTES
110oC
0.1
5 10 20
VGE
15V
10V
15V
10V
40
60
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
225 TJ = 150oC, RG = 3, VGE = 15V, L =100µH
200
175
150
125
100
75
50
25
0
0 100 200 300 400 500 600 700
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
20
VCE = 360V, RG = 3, TJ = 125oC
18
500
450
16 400
ISC
14 350
12 300
10 250
tSC
8 200
6 150
10 11 12 13 14 15
VGE, GATE TO EMITTER VOLTAGE (V)
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
3










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