PDF HGTG30N60C3 Data sheet ( Hoja de datos )

Número de pieza	HGTG30N60C3
Descripción	63A/ 600V/ UFS Series N-Channel IGBT
Fabricantes	Intersil Corporation
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No Preview Available ! Data Sheet HGTG30N60C3 January 2000 File Number 4042.2 63A, 600V, UFS Series N-Channel IGBT The HGTG30N60C3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly Developmental Type TA49051. Ordering Information PART NUMBER PACKAGE BRAND HGTG30N60C3 TO-247 G30N60C3 NOTE: When ordering, use the entire part number. Symbol C Features • 63A, 600V at TC = 25oC • 600V Switching SOA Capability • Typical Fall Time. . . . . . . . . . . . . . . . 230ns at TJ = 150oC • Short Circuit Rating • Low Conduction Loss Packaging JEDEC STYLE TO-247 E C G G E INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 4,430,792 4,620,211 4,694,313 4,809,047 4,901,127 4,443,931 4,631,564 4,717,679 4,810,665 4,904,609 4,466,176 4,639,754 4,743,952 4,823,176 4,933,740 4,516,143 4,639,762 4,783,690 4,837,606 4,963,951 4,532,534 4,641,162 4,794,432 4,860,080 4,969,027 4,587,713 4,644,637 4,801,986 4,883,767 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. 1-888-INTERSIL or 321-724-7143 \| Copyright © Intersil Corporation 2000 1 page HGTG30N60C3 Typical Performance Curves (Continued) 500 TJ = 150oC, TC = 75oC RG = 3Ω, L = 100µH 100 VGE = 15V fMAX1 = 0.05/(tD(OFF)I + tD(ON)I) 10 fMAX2 = (PD - PC)/(EON + EOFF) PD = ALLOWABLE DISSIPATION PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) RθJC = 0.6oC/W 1 5 10 20 VGE = 10V 30 40 60 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13. OPERATING FREQUENCY vs COLLECTOR TO EMITTER CURRENT 250 TJ = 150oC, VGE = 15V, L = 100µH 200 150 LIMITED BY 100 CIRCUIT 50 0 0 100 200 300 400 500 600 VCE, COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 14. SWITCHING SAFE OPERATING AREA 8000 7000 6000 5000 4000 3000 2000 1000 0 0 CIES FREQUENCY = 400kHz COES CRES 5 10 15 20 VCE, COLLECTOR TO EMITTER VOLTAGE (V) 25 FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE IG(REF) = 3.54mA, RL = 20Ω, TC = 25oC 600 15 480 VCE = 600V 360 12 9 240 VCE = 400V 6 VCE = 200V 120 3 00 0 40 80 120 160 200 QG, GATE CHARGE (nC) FIGURE 16. GATE CHARGE WAVEFORMS 100 0.5 0.2 10-1 0.1 0.05 0.02 0.01 10-2 SINGLE PULSE t1 PD t2 DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZθJC X RθJC) + TC 10-5 10-4 10-3 10-2 10-1 t1, RECTANGULAR PULSE DURATION (s) 100 FIGURE 17. IGBT NORMALIZED TRANSIENT THERMAL IMPEDANCE, JUNCTION TO CASE 101 5 5 Page

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